NUV-HD SiPMs with metal-filled trenches

In this paper we present the performance of a new SiPM that is sensitive to blue light and features narrow metal-filled trenches placed in the area around the single-photon avalanche diodes (SPADs) that allow an almost complete suppression the internal optical crosstalk. In particular, we show the benefits of this technological upgrade in terms of electro-optical SiPM performance when compared to the previous technology which had only a partial optical screening between the SPADs. The most relevant effect is the much higher bias voltage that can be applied to the new device before the noise diverges. This allows to optimize and improve both the photon detection efficiency and the single-photon time resolution. We also coupled the SiPMs to LYSO scintillators to verify the performance for possible application in Positron-Emission Tomography. Thanks to the better electro-optical features we were able to measure an improved coincidence time resolution. Furthermore, the optimal voltage operation region is substantially larger, making this SiPM more suitable for real system application where thousands of channels have to provide stable and reproducible performance

First Demonstration of the Use of LG-SiPMs for Optical Readout of a TPC

This paper describes a new method for optical readout of Time Projection Chambers (TPCs), based on the Linearly Graded Silicon Photomultiplier (LG-SiPM). This is a single photon-sensitive detector with excellent timing and 2D position resolution developed at Fondazione Bruno Kessler, Trento (FBK). The LG-SiPM produces time-varying voltage signals that are used to reconstruct the 3D position and energy of ionisation tracks generated inside the TPC. The TPC used in this work contained room-temperature CF$_4$ gas at a pressure of 100 mbar, with two THGEMs to produce secondary scintillation light. A collimated $^{241}$Am source (Q$_\alpha$ = 5.486 MeV) was used to produce the ionisation tracks. The successful reconstruction of these tracks is demonstrated, and the consistency of the methodology characterised through varying the geometry of the tracks within the TPC. Energy reconstruction and deposition studies are also described, demonstrating the feasibility of the LG-SiPM as a potential option for optical TPC readout.Comment: Various changes from previous version based on pre-publication revie

NUV-HD SiPMs with Metal-filled Trenches

In this contribution we would like to present a breakthrough improvement of the optical crosstalk between SPADs in SiPMs. In the framework of a collaboration between FBK and Broadcom we developed narrow metal-filled trenches that greatly suppress the optical crosstalk while maintaining a high fill factor and, in turn, photon detection efficiency. In particular, the new metal in trench detector (NUV-HD-MT) features an internal crosstalk almost 10 times lower than previous NUV-HD FBK SiPMs and can operate up to 17 V of excess bias voltages without any divergence of the correlated noise. The higher operating bias compensates the small loss in fill factor due to the insertion of the metal layer in the trenches and allows the NUV-HD-MT to reach PDE in excess of 60% with 40 μm cells. Together with a SiPM layout optimized for timing, the extended bias range allows to operate the detector with higher gain and low level of correlated noise, improving the CTR performance below 90 ps using 4x4 mm2 detectors coupled to 3x3x5 mm3 LYSO:Ce crystals and readout by a conventional front-end. The characteristics described above allow this detector to be considered as a good candidate for the upgrade of ToF-PET machines

Silicon Photomultipliers technologies for 3D integration

Progress in 3D interconnecting technologies paved the way to a new generation of Silicon Photomultipliers (SiPM) by combining the integrated functionalities of the digital SiPM with the high performance, in terms of noise and efficiency, of the analog SiPM. Recently, FBK has been developing new 3D integration technologies, specifically designed for SiPMs, to improve performances and functionalities by using backside-illuminated (BSI) devices and Through Silicon Vias (TSV) interconnections. Two different technology platforms have been identified: a BSI design for NIR and TSV interconnections for NUV/VUV SiPMs. Two R&D batches are under development to demonstrate the feasibility as well as robustness and reliability of both the technologies. For NIR applications, electrical characterization of ultra-thin SiPM wafers with a metal reflector on the front side has shown an improved photon detection efficiency when operated in BSI configuration compared with thinned front-side illuminated (FSI) devices, allowing at the same time high-segmentation access to the SiPM output from the front-side. Instead, for NUV/VUV applications, a FSI stacked approach is more suitable since the junction depth needs to be shallower to absorb short wavelengths. In this case, TSV interconnections have been implemented allowing to place the contacts on the backside of the wafer

3D integration technologies for custom SiPM: From BSI to TSV interconnections

Progress in 3D interconnecting technologies paved the way for a new generation of Silicon Photomultipliers (SiPM) and Single Photon Avalanche Diode (SPAD): hybrid devices which combine the integrated functionalities of the digital SiPM with the high performance of custom technologies, like low noise and high detection efficiency. Recently, Fondazione Bruno Kessler (FBK) has been working on the implementation of recently developed 3D integration technologies, on SiPMs devices, to improve both performances and functionalities by creating backside-illuminated (BSI) devices and Through Silicon Vias (TSV) interconnections. Two different technology platforms have been investigated: a BSI design for near-infrared (NIR) sensitive SiPMs and TSV interconnections for near- and vacuum-ultraviolet (NUV/VUV) sensitive detectors. For NIR applications, electrical characterization of ultra-thin (about ) SiPM wafers with a metal reflector on the frontside has shown an improved photon detection efficiency (PDE) when operated in BSI configuration compared with non-thinned front-side illuminated (FSI) devices, allowing at the same time full high-segmentation access to the SiPM output from the front-side. Instead, for NUV/VUV applications, a FSI stacked approach is considered more suitable since the junction depth needs to be shallower. In this case, TSV interconnections using two different approaches (named Via-Mid and Via-Last) have been implemented allowing the placement of the contacts on the backside of the wafer

On timing-optimized SiPMs for Cherenkov detection to boost low cost time-of-flight PET

Objective. Recent SiPM developments and improved front-end electronics have opened new doors in TOF-PET with a focus on prompt photon detection. For instance, the relatively high Cherenkov yield of bismuth-germanate (BGO) upon 511 keV gamma interaction has triggered a lot of interest, especially for its use in total body positron emission tomography (PET) scanners due to the crystal’s relatively low material and production costs. However, the electronic readout and timing optimization of the SiPMs still poses many questions. Lab experiments have shown the prospect of Cherenkov detection, with coincidence time resolutions (CTRs) of 200 ps FWHM achieved with small pixels, but lack system integration due to an unacceptable high power uptake of the used amplifiers. Approach. Following recent studies the most practical circuits with lower power uptake (<30 mW) have been implemented and the CTR performance with BGO of newly developed SiPMs from Fondazione Bruno Kessler tested. These novel SiPMs are optimized for highest single photon time resolution (SPTR). Main results. We achieved a best CTR FWHM of 123 ps for 2 × 2 × 3 mm3 and 243 ps for 3 × 3 × 20 mm3 BGO crystals. We further show that with these devices a CTR of 106 ps is possible using commercially available 3 × 3 × 20 mm3 LYSO:Ce,Mg crystals. To give an insight in the timing properties of these SiPMs, we measured the SPTR with black coated PbF2 of 2 × 2 × 3 mm3 size. We confirmed an SPTR of 68 ps FWHM published in literature for standard devices and show that the optimized SiPMs can improve this value to 42 ps. Pushing the SiPM bias and using 1 × 1 mm2 area devices we measured an SPTR of 28 ps FWHM. Significance. We have shown that advancements in readout electronics and SiPMs can lead to improved CTR with Cherenkov emitting crystals. Enabling time-of-flight with BGO will trigger a high interest for its use in low-cost and total-body PET scanners. Furthermore, owing to the prompt nature of Cherenkov emission, future CTR improvements are conceivable, for which a low-power electronic implementation is indispensable. In an extended discussion we will give a roadmap to best timing with prompt photons

FBK VUV-sensitive Silicon Photomultipliers for cryogenic temperatures

Fondazione Bruno Kessler (FBK) has been continuously developing and improving silicon photomultiplier technologies, for example with peak efficiency in the blue (near-ultra-violet, NUV), or in the green (red–green–blue, RGB) region of the spectrum. Over the last years there has been a growing interest in silicon photomultipliers (SiPMs) applications at cryogenic temperatures (e.g.: for the readout of the scintillation light from liquefied noble gases in rare-events experiments). One example is the DarkSide-20k experiment, in which LAr scintillation light is detected after wavelength-shifting to match the SiPMs’ spectral response. A dedicated silicon photomultiplier technology has been developed in FBK: the NUV-HD-Cryo. SiPMs made in such technology reach primary dark count rates of about 2 mHz∕mm2 and an after-pulsing probability of about 12% when biased at 4 V above breakdown in liquid nitrogen (LN). In other experiments, like for example the nEXO experiment, direct detection of vacuum ultra-violet (VUV) light in cryogenic conditions is required. In this case, the sensitivity in VUV has to be combined with the advantages of the “Cryo” technology. In this contribution, the latest results from the cryogenic characterization of FBK VUV-HD technology for cryogenic temperatures will be presented. Among the produced devices, one promising split has been identified with reduced after-pulsing probability at 100 K, less than “standard” VUV-HD device