Conduction Mechanisms in the Thin Film Structure [(Co40Fe40B20)34(SiO2)66/ZnO]112

The paper presents the results of analysis of the mechanisms of electrotransport in thin-film multilayer structures [(Co40Fe40B20)34(SiO2)66/ZnO]112 in the temperature range 77-300 K.Работа выполнена при поддержке гранта Президента Российской Федерации для государственной поддержки молодых российских ученых - кандидатов наук МК-4296.2022.1.

OPTICAL PROPERTIES OF (In2O3/SiO2)25 MULTILAYER STRUCTURES

(In2O3/SiO2)25 multilayer structures were obtained by ion-beam sputtering. The structure of (In2O3/SiO2)25 thin films are amorphous. Multilayer structures have high transparency and low electrical resistance, which makes them a promising material for transparent electronics.Работа была выполнена при поддержке государственного задания (№ FZGM-2020-0007)

EFFECT OF ANNEALING ON THE MAGNETORESISTIVE PROPERTIES OF (Co47Fe42Zr11)х(MgF2)100-х COMPOSITES

Magnetic and magnetoresistive properties of (CoFeZr)х(MgF2)100-х thin film composites have been investigated in wide range of metal phase concentration (14 ат.% ≤ х ≤ 52 ат.%). The composites were studied in initial state and after heat treatment at different temperatures up to 350 oC.Работа выполнена при поддержке Министерства науки и высшего образования Российской Федерации (проект № FZGM-2023-0006)

THERMOEMF OF THIN-FILM STRUCTURES In2O3/SiO2

Thin films (In2O3/SiO2)25 were by ion-beam sputtering. The effect of heat treatment on the phase composition and thermopower is studied. Increasing of annealing temperature – a thermopower was decrease. After annealing, the structure of thin films is preserved up to a temperature of 500°C.Данная работа выполнена при поддержке РФФИ (Грант №19-48-360010 р_а)

THE EFFECT OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF THE MULTILAYER STRUCTURE [ZnO/C]25

The magnetoresistance of [ZnO/С]25 multilayer thin films prepared by ion-beam sput-tering has been investigated. A decrease in the magnetoresistance with an increase in the an-nealing temperature was detected, which is associated with a change in the mechanism of electric transport.Работа выполнена при поддержке гранта РФФИ (проект 19-48-360010)

THE ELECTRICAL PROPERTIES OF THE MULTILAYER SYSTEM [(Co40Fe40B20)34(SiO2)66/ZnO]112

It was shown that the change in the electrical resistivity of [(Co40Fe40B20)34(SiO2)66/ZnO]112 films from their thickness is associated with the formation of a multilayer structure and a decrease in the specific number of conductive interface regions with increasing film thickness.Работа была выполнена при поддержке РФФИ (проект № 19-48-360010)

INFLUENCE OF SYNTHESIS CONDITIONS ON THE OPTICAL PROPERTIES OF THE ZNO-C THIN FILM SYSTEM

The optical properties of ZnO-С thin film system prepared by ion-beam sputtering has been investigated. The addition of carbon in synthesis process leads to a decrease in the trans-parency of the film by almost 2 times. The results of calculating the band gap for the obtained samples are presented.Работа была выполнена при поддержке РФФИ (проект № 19-48-360010)