282 research outputs found
Switching the magnetic configuration of a spin valve by current induced domain wall motion
We present experimental results on the displacement of a domain wall by
injection of a dc current through the wall. The samples are 1 micron wide long
stripes of a CoO/Co/Cu/NiFe classical spin valve structure.
The stripes have been patterned by electron beam lithography. A neck has been
defined at 1/3 of the total length of the stripe and is a pinning center for
the domain walls, as shown by the steps of the giant magnetoresistance curves
at intermediate levels (1/3 or 2/3) between the resistances corresponding to
the parallel and antiparallel configurations. We show by electric transport
measurements that, once a wall is trapped, it can be moved by injecting a dc
current higher than a threshold current of the order of magnitude of 10^7
A/cm^2. We discuss the different possible origins of this effect, i.e. local
magnetic field created by the current and/or spin transfer from spin polarized
current.Comment: 3 pages, 3 figure
Direct probing of band-structure Berry phase in diluted magnetic semiconductors
We report on experimental evidence of the Berry phase accumulated by the
charge carrier wave function in single-domain nanowires made from a
(Ga,Mn)(As,P) diluted ferromagnetic semiconductor layer. Its signature on the
mesoscopic transport measurements is revealed as unusual patterns in the
magnetoconductance, that are clearly distinguished from the universal
conductance fluctuations. We show that these patterns appear in a magnetic
field region where the magnetization rotates coherently and are related to a
change in the band-structure Berry phase as the magnetization direction
changes. They should be thus considered as a band structure Berry phase
fingerprint of the effective magnetic monopoles in the momentum space. We argue
that this is an efficient method to vary the band structure in a controlled way
and to probe it directly. Hence, (Ga,Mn)As appears to be a very interesting
test bench for new concepts based on this geometrical phase.Comment: 7 pages, 6 figure
Noise dephasing in the edge states of the Integer Quantum Hall regime
An electronic Mach Zehnder interferometer is used in the integer quantum hall
regime at filling factor 2, to study the dephasing of the interferences. This
is found to be induced by the electrical noise existing in the edge states
capacitively coupled to each others. Electrical shot noise created in one
channel leads to phase randomization in the other, which destroys the
interference pattern. These findings are extended to the dephasing induced by
thermal noise instead of shot noise: it explains the underlying mechanism
responsible for the finite temperature coherence time of the
edge states at filling factor 2, measured in a recent experiment. Finally, we
present here a theory of the dephasing based on Gaussian noise, which is found
in excellent agreement with our experimental results.Comment: ~4 pages, 4 figure
Bioactive flavanones from Luma chequen
A bioassay-guided chemical study of a methanolic extract of fresh leaves of Luma chequen led to the isolation of lumaflavanones A (1), B (2) and C (3) whose structures are proposed on the basis of NMR spectroscopic data. The structure of lumaflavanone A was confirmed by X-ray analysis. Antifeedant (Spodoptera littoralis), brine shrimp (Artemia salina) and fungistatic (Botrytis cinerea) bioassays showed that while 3 was the most active in the first two assays the mixture of 1 and 2 was more effective as a fungistatic
Tuning decoherence with a voltage probe
We present an experiment where we tune the decoherence in a quantum
interferometer using one of the simplest object available in the physic of
quantum conductors : an ohmic contact. For that purpose, we designed an
electronic Mach-Zehnder interferometer which has one of its two arms connected
to an ohmic contact through a quantum point contact. At low temperature, we
observe quantum interference patterns with a visibility up to 57%. Increasing
the connection between one arm of the interferometer to the floating ohmic
contact, the voltage probe, reduces quantum interferences as it probes the
electron trajectory. This unique experimental realization of a voltage probe
works as a trivial which-path detector whose efficiency can be simply tuned by
a gate voltage
Improving HTc Josephson Junctions (HTc JJ) by annealing: the role of vacancy-interstitial annihilation
We have studied the annealing effect in transport properties of High
temperature Josephson Junctions (HTc JJ) made by ion irradiation. Low
temperature annealing (80 degrees Celsius) increases the JJ transition
temperature (TJ) and the Ic.Rn product, where Ic is the critical current and Rn
the normal resistance. We found that the spread in JJ characteristics can be
lowered by sufficient long annealing times. Using random walk numerical
simulations, we showed that the characteristic annealing time and the evolution
of the spread in JJ characteristics can be explained by a vacancy-interstitial
annihilation process rather than by an oxygen diffusion one.Comment: 7 pages and 3 figures submitted to Applied Physics Letter
Study and optimization of ion-irradiated High-Tc Josephson nanoJunctions by Monte Carlo simulations
High Tc Josephson nanoJunctions (HTc JnJ) made by ion irradiation have
remarkable properties for technological applications. However, the spread in
their electrical characteristics increases with the ion dose. We present a
simple model to explain the JnJ inhomogeneities, which accounts quantitatively
for experimental data. The spread in the slit's width of the irradiation mask
is the limiting factor.Monte Carlo simulations have been performed using
different irradiation conditions to study their influence on the spread of the
JnJ charcateristics. A "universal" behavior has been evidenced, which allows to
propose new strategies to optimize JnJ reproducibility.Comment: 14 pages, 6 Figures. accepted in Journal of Applied Physic
Aharonov-Bohm cages in the GaAlAs/GaAs system
Aharonov-Bohm oscillations have been observed in a lattice formed by a two
dimensional rhombus tiling. This observation is in good agreement with a recent
theoretical calculation of the energy spectrum of this so-called T3 lattice. We
have investigated the low temperature magnetotransport of the T3 lattice
realized in the GaAlAs/GaAs system. Using an additional electrostatic gate, we
have studied the influence of the channel number on the oscillations amplitude.
Finally, the role of the disorder on the strength of the localization is
theoretically discussed.Comment: 6 pages, 11 EPS figure
Quantum coherence engineering in the integer quantum Hall regime
We present an experiment where the quantum coherence in the edge states of
the integer quantum Hall regime is tuned with a decoupling gate. The coherence
length is determined by measuring the visibility of quantum interferences in a
Mach-Zehnder interferometer as a function of temperature, in the quantum Hall
regime at filling factor two. The temperature dependence of the coherence
length can be varied by a factor of two. The strengthening of the phase
coherence at finite temperature is shown to arise from a reduction of the
coupling between co-propagating edge states. This opens the way for a strong
improvement of the phase coherence of Quantum Hall systems. The decoupling gate
also allows us to investigate how inter-edge state coupling influence the
quantum interferences' dependence on the injection bias. We find that the
finite bias visibility can be decomposed into two contributions: a Gaussian
envelop which is surprisingly insensitive to the coupling, and a beating
component which, on the contrary, is strongly affected by the coupling.Comment: 4 pages, 5 figure
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