Chemical mechanical polishing of thin film diamond

The demonstration that Nanocrystalline Diamond (NCD) can retain the superior Young's modulus (1,100 GPa) of single crystal diamond twinned with its ability to be grown at low temperatures (<450 {\deg}C) has driven a revival into the growth and applications of NCD thin films. However, owing to the competitive growth of crystals the resulting film has a roughness that evolves with film thickness, preventing NCD films from reaching their full potential in devices where a smooth film is required. To reduce this roughness, films have been polished using Chemical Mechanical Polishing (CMP). A Logitech Tribo CMP tool equipped with a polyurethane/polyester polishing cloth and an alkaline colloidal silica polishing fluid has been used to polish NCD films. The resulting films have been characterised with Atomic Force Microscopy, Scanning Electron Microscopy and X-ray Photoelectron Spectroscopy. Root mean square roughness values have been reduced from 18.3 nm to 1.7 nm over 25 {\mu}m$^2$, with roughness values as low as 0.42 nm over ~ 0.25 {\mu}m$^2$. A polishing mechanism of wet oxidation of the surface, attachment of silica particles and subsequent shearing away of carbon has also been proposed.Comment: 6 pages, 6 figure

Chemical nucleation of diamond films

With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp² content

Superconducting Diamond on Silicon Nitride for Device Applications

Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods of silicon nitride, were investigated. Such treatments provide control over the surface charge of the substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride substrates under CVD conditions produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices

Air-clad suspended nanocrystalline diamond ridge waveguides

A hybrid group IV ridge waveguide platform is demonstrated, with potential application across the optical spectrum from ultraviolet to the far infrared wavelengths. The waveguides are fabricated by partial etching of sub-micron ridges in a nanocrystalline diamond thin film grown on top of a silicon wafer. To create vertical confinement, the diamond film is locally undercut by exposing the chip to an isotropic fluorine plasma etch via etch holes surrounding the waveguides, resulting in a mechanically stable suspended air-clad waveguide platform. Optical characterization of the waveguides at 1550 nm yields an average optical loss of 4.67 ± 0.47 dB/mm. Further improvement to the fabrication process is expected to significantly reduce this waveguide loss

Hybrid diamond/silicon suspended integrated photonic platform using SF6 isotropic etching

A hybrid diamond/silicon air-clad ridge waveguide platform is demonstrated. The air-clad structure coupled with the wide transmission window of diamond can allow for the use of this architecture over a large wavelength range, especially for the longer infrared wavelengths. In order to provide vertical confinement, the silicon substrate was isotropically etched using S F6 plasma to create undercut diamond films. An in-depth analysis of the etch characteristics of this process was performed to highlight its potential to replace wet isotropic etching or XeF 2 isotropic vapour phase etching techniques. The performance of the waveguide at 1550 nm was measured, and yielded an average loss of 4.67 +/- 0.47 dB/mm

Effect of slurry composition on the chemical mechanical polishing of thin diamond films

Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition (CVD) have an intrinsic surface roughness, which hinders the development and per- formance of the films' various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The nal surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones

Chemical nucleation of diamond films

With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp2 content

Polycrystalline diamond micro‐hotplates

Micro‐hotplate structures are increasingly being investigated for use in a host of applications ranging from broadband infra‐red sources within absorption‐based gas sensors to in situ heater stages for ultra‐high‐resolution imaging. With devices usually fabricated from a conductive electrode placed on top of a freestanding radiator element, coefficient of thermal expansion (CTE) mismatches between layers and electro‐migration within the heating element typically lead to failure upon exceeding temperatures of 1600 K. In an attempt to mitigate such issues, a series of hotplates of varying geometry have been fabricated from a single layer of mechanically robust, high thermal conductivity, and low CTE boron‐doped polycrystalline diamond. Upon testing under high vacuum conditions and characterization of the emission spectra, the resulting devices are shown to exhibit a grey‐body like emission response and reach temperatures vastly in excess of conventional geometries of up to 2731 K at applied powers of ⩽100 mW. Characterization of the thermalization time meanwhile demonstrates rapid millisecond response times, while Raman spectroscopy reveals the performance of the devices is dictated by cumulative graphitization at elevated temperatures. As such, both diamond and sp2 carbon are shown to be promising materials for the fabrication of next‐generation micro‐hotplates

Investigating the broadband microwave absorption of nanodiamond impurities

Broadband microwave complex permittivity measurements of nanodiamond powders are presented. Previous studies show that measurements of dielectric loss strongly correlate with the presence of nondiamond surface impurities. In this study, the frequency dependence of these losses is investigated using the microwave cavity perturbation (MCP) and broadband coaxial probe (BCP) methods. This allowed further understanding as to what mechanisms contribute to the microwave absorption (free electron conduction or dielectric loss from the disordered surfaces). A multimode MCP system is used which utilizes ${rm TM}_{0np}$ modes to provide partial spectral characterization. The MCP results revealed minimal frequency dependence, unlike any static conduction-related mechanism. The BCP measurements corroborate the MCP results with much higher spectral resolution, and further demonstrate that disorder related loss may dominate over free electron conduction from 1–10 GHz. From 0.1–1 GHz, free electron conduction has a greater influence with a characteristic $1/f$ dependence implying that conduction may dominate at lower frequencies. However, the BCP method, while repeatable, lacks in precision compared to the cavity method. Nonetheless, the major conclusion in this paper is that through simple microwave permittivity measurements, nondiamond carbon impurities in nanodiamond powders are measurable most likely because of disorder related losses as opposed to free electron conduction