Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides

We report the experimental realization of a compact, efficient coupler between silicon waveguides and vertical metal-insulator-silicon-metal (MISM) plasmonic waveguides. Devices were fabricated using complementary metal-oxide-silicon technology processes, with copper layers that support low-loss plasmonic modes in the MISM structures at a wavelength of 1550 nm. By implementing a short (0.5 μm) optimized metal-insulator-silicon-insulator structure inserted between the photonic and plasmonic waveguide sections, we demonstrate experimental coupling loss of 2.5 dB, despite the high optical confinement of the MISM mode and mismatch with the silicon waveguide mode

Nanoscale plasmonic memristor with optical readout functionality

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides. © 2013 American Chemical Society

Optically readable resistive random access memory in silicon plasmonics platform

We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis

Fast MoTe₂ Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths

Two-dimensional (2D) materials integrated with planar photonic elements enable a new class of electro-optical components and hold much promise for a novel 2D material integrated circuit technology. Here, we present a few-layer MoTe₂ waveguide photodetector that is operable across the entire O-band of the near-infrared optical telecommunication spectral range. The device is realized in a two-terminal in-plane electrode configuration without applying external gating. It features a competitive photoresponsivity of 23 mA/W as well as a low dark current, both of which lead to a highly sensitive photodetection with a large dynamic range. Moreover, the design of the photodetector exhibits a fast photoresponse with a bandwidth approaching 1 GHz, outperforming prior TMDC-based photodetectors. Optical data experiments proved the operation of our device at data rates of 1 Gbit/s, revealing the applicability of integrating 2D materials for practical optical data communication applications