Modeling the electromigration failure time distribution in short copper interconnects

This article was published in the serial, Journal of Applied Physics [© American Institute of Physics]. It is also available at: http://dx.doi.org/10.1063/1.2970171The electromigration EM lifetime in short copper interconnects is modeled using a previously developed means of generating realistic interconnect microstructures combined with the one-dimensional stress evolution equation of Korhonen et al. J. Appl. Phys. 73, 3790 1993 . This initial analysis describes the void nucleation and subsequent growth in lines blocked at one end and terminated with a pad at the other. For short copper interconnects, the failure time is largely spent on void growth, and, for sufficiently short lines (≤ 50 mm), the growth is largely steady state. This allows for the development of a simple expression for the variation of the failure time with microstructure. Assuming that the diffusion activation energies are normally distributed, the permanence property of summed lognormals leads to a roughly lognormal distribution for EM failure times. Importantly for EM design rules, linear extrapolation on lognormal plot is found to slightly underestimate interconnect reliability

Characterization of chemical bonding in low-k dielectric materialsfor interconnect isolation: a xas and eels study

The use of low dielectric constant materials in the on-chipinterconnect process reduces interconnect delay, power dissipation andcrosstalk noise. To achieve the requirements of the ITRS for 2007-2009minimal sidewall damage from etch, ash or cleans is required. In chemicalvapor deposited (CVD) organo-silicate glass (OSG) which are used asintermetal dielectric (IMD) materials the substitution of oxygen in SiO2by methyl groups (-CH3) reduces the permittivity significantly (from 4.0in SiO2 to 2.6-3.3 in the OSG), since the electronic polarizability islower for Si-C bonds than for Si-O bonds. However, plasma processing forresist stripping, trench etching and post-etch cleaning removes C and Hcontaining molecular groups from the near-surface layer of OSG.Therefore, compositional analysis and chemical bonding characterizationof structured IMD films with nanometer resolution is necessary forprocess optimization. OSG thin films as-deposited and after plasmatreatment are studied using X-ray absorption spectroscopy (XAS) andelectron energy loss spectroscopy (EELS). In both techniques, the finestructure near the C1s absorption or energy loss edge, respectively,allows to identify C-H, C-C, and C-O bonds. This gives the opportunity todifferentiate between individual low-k materials and their modifications.The O1s signal is less selective to individual bonds. XAS spectra havebeen recorded for non-patterned films and EELS spectra for patternedstructures. The chemical bonding is compared for as-deposited andplasma-treated low-k materials. The Fluorescence Yield (FY) and the TotalElectron Yield (TEY) recorded while XAS measurement are compared.Examination of the C 1s near-edge structures reveal a modified bonding ofthe remaining C atoms in the plasma-treated sample regions

Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

This paper combined experiments and simulation to investigate the grain size and cap layer effects on electromigration (EM) reliability of Cu interconnects. First the statistical distribution of EM lifetime and failure modes were examined for in laid Cu interconnects of large and small grain structures with two different cap layers of SiCN vs. CoWP. The CoWP cap was found to significantly improve the EM lifetime due to the suppression of the interfacial mass transport as a result of strengthening of the Cu/cap interface bonding. In addition, the grain size was observed to affect the EM reliability significantly, particularly for the CoWP capped structures. Resistance traces and failure analysis revealed two distinct failure modes: mode I with voids formed near the cathode via corner and mode II with voids formed in the trench several microns away from the cathode via. It was found that large grain size and strong cap interface reduced the mass transport rate and the void diffusion in the Cu line, leading to a longer EM lifetime and a higher proportion of mode II failures. A statistical simulation of EM lifetimes was also applied to Cu interconnects with grain structures generated by the Monte Carlo method. The simulation results for different grain sizes and cap interfaces are in good agreement with the experimental observations.Microelectronics Research Cente

Towards monitored tomographic reconstruction: algorithm-dependence and convergence

The monitored tomographic reconstruction (MTR) with optimized photon flux technique is a pioneering method for X-ray computed tomography (XCT) that reduces the time for data acquisition and the radiation dose. The capturing of the projections in the MTR technique is guided by a scanning protocol built on similar experiments to reach the predetermined quality of the reconstruction. This method allows achieving a similar average reconstruction quality as in ordinary tomography while using lower mean numbers of projections. In this paper, we, for the first time, systematically study the MTR technique under several conditions: reconstruction algorithm (FBP, SIRT, SIRT-TV, and others), type of tomography setup (micro-XCT and nano-XCT), and objects with different morphology. It was shown that a mean dose reduction for reconstruction with a given quality only slightlyvaries with choice of reconstruction algorithm, and reach up to 12.5 % in case of micro-XCT and 8.5 % for nano-XCT. The obtained results allow to conclude that the monitored tomographic reconstruction approach can be universally combined with an algorithm of choice to perform a controlled trade-off between radiation dose and image quality. Validation of the protocol on independent common ground truth demonstrated a good convergence of all reconstruction algorithms within the MTR protocol.This work was partly supported by RFBR (grants) 20-07-00934

Redox-Active Metaphosphate-Like Terminals Enable High-Capacity MXene Anodes for Ultrafast Na-Ion Storage

D transition metal carbides and/or nitrides, so-called MXenes, are noted as ideal fast-charging cation-intercalation electrode materials, which nevertheless suffer from limited specific capacities. Herein, it is reported that constructing redox-active phosphorus−oxygen terminals can be an attractive strategy for Nb$_4$C$_3$ MXenes to remarkably boost their specific capacities for ultrafast Na$^+$ storage. As revealed, redox-active terminals with a stoichiometric formula of PO$_2$- display a metaphosphate-like configuration with each P atom sustaining three P-O bonds and one P=O dangling bond. Compared with conventional O-terminals, metaphosphate-like terminals empower Nb$_4$C$_3$ (denoted PO$_2$-Nb$_4$C$_3$) with considerably enriched carrier density (fourfold), improved conductivity (12.3-fold at 300 K), additional redox-active sites, boosted Nb redox depth, nondeclined Na$^+$-diffusion capability, and buffered internal stress during Na$^+$ intercalation/de-intercalation. Consequently, compared with O-terminated Nb$_4$C$_3$, PO$_2$-Nb$_4$C$_3$ exhibits a doubled Na$^+$-storage capacity (221.0 mAh g$^{-1}$), well-retained fast-charging capability (4.9 min at 80% capacity retention), significantly promoted cycle life (nondegraded capacity over 2000 cycles), and justified feasibility for assembling energy−power-balanced Na-ion capacitors. This study unveils that the molecular-level design of MXene terminals provides opportunities for developing simultaneously high-capacity and fast-charging electrodes, alleviating the energy−power tradeoff typical for energy-storage devices

Fabrication of Highly Ordered Polymeric Nanodot and Nanowire Arrays Templated by Supramolecular Assembly Block Copolymer Nanoporous Thin Films

Realizing the vast technological potential of patternable block copolymers requires both the precise controlling of the orientation and long-range ordering, which is still a challenging topic so far. Recently, we have demonstrated that ordered nanoporous thin film can be fabricated from a simple supramolecular assembly approach. Here we will extend this approach and provide a general route to fabricate large areas of highly ordered polymeric nanodot and nanowire arrays. We revealed that under a mixture solvent annealing atmosphere, a near-defect-free nanoporous thin film over large areas can be achieved. Under the direction of interpolymer hydrogen bonding and capillary action of nanopores, this ordered porous nanotemplate can be properly filled with phenolic resin precursor, followed by curation and pyrolysis at middle temperature to remove the nanotemplate, a perfect ordered polymer nanodot arrays replication was obtained. The orientation of the supramolecular assembly thin films can be readily re-aligned parallel to the substrate upon exposure to chloroform vapor, so this facile nanotemplate replica method can be further extend to generate large areas of polymeric nanowire arrays. Thus, we achieved a successful sub-30 nm patterns nanotemplates transfer methodology for fabricating polymeric nanopattern arrays with highly ordered structure and tunable morphologies