Randomly organized and self-assembled Na0.5Bi0.5TiO3 nanodots elaborated by sol-gel and pulsed laser deposition routes

International audienceThis work reports for the first time on the elaboration, by both chemical (sol-gel) and physical (pulsed laser deposition) routes, of lead-free ferroelectric Na0.5Bi0.5TiO3 nanodots deposited on bare c-sapphire single crystal substrates presenting a 5° miscut angle along the [110] direction. Prior to any deposition, the sapphire substrates were treated at 1350 °C, during 24 h in air, in order to increase the height of the surface steps, reaching by this way ~8 nm. The experimental parameters adjusted for the growth of Na0.5Bi0.5TiO3 dots were the concentration of sols and the number of laser pulses (50 and 100) for the sol-gel and pulsed laser deposition routes, respectively. Whereas the sol-gel route leads to randomly organized Na0.5Bi0.5TiO3 nanodots in respect to the surface steps, the pulsed laser deposition route provokes the self-assembly for some important proportion of these dots along the same surface steps. Despite the lack of organization for the sol-gel dots, the latter present a much more regular distribution in size (~100 and ~10-20 nm as an average lateral dimensions and height, respectively) compared to dots deposited by laser ablation, where three different populations of grains can be observed. In each case, the dots do not seem to be epitaxially grown

Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates

International audienceThe epitaxial growth of lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al2O3) substrates, with and without introducing a CeO2 buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO3 substrates, with and without introducing a LaNiO3 layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO2 buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al2O3 substrates buffered with epitaxial (001)CeO2 layers, while, growing simply NBT on top of bare c or r-Al2O3 substrates, or on top of CeO2/c-Al2O3 heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO3 or (001)SrTiO3 substrates (STO) covered with (001)LaNiO3 (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO3 layer

Investigation of passive and active silica-tin oxide nanostructured optical fibers fabricated by " inverse dip-coating " and " powder in tube " method based on the chemical sol-gel process and laser emission

International audienceThis paper presents a study of original nanostructured optical fibers based on the SiO 2-SnO 2-(Yb 3+) system. Two different processes have been developed and compared: the sol-gel chemical method associated to the " inverse dip-coating " (IDC) and the " powder in tube " (PIT) process. The microstructural and optical properties of the fibers are studied according to the concentration of SnO 2. X-Ray Diffraction as well as Transmission Electron Microscopy studies show that SnO 2 crystallizes into the cassiterite phase as nanoparticles with a diameter ranging from 4 to 50 nm as a function of tin oxide concentration. A comparative study highlights a better conservation of SnO 2 into the fiber core with the PIT approach according to the refractive index profile and X-Ray analysis measurement. The attenuation evaluated by the classic cutback method gives respectively values higher than 3 dB/m and 0.2 dB/m in the visible (VIS) and infrared (IR) range for the PIT fiber whereas background losses reach 0.5 dB/m in the VIS range for IDC fibers. The introduction of ytterbium ions into the core of PIT fibers, directly in the first chemical step, leads to a laser emission (between 1050 and 1100 nm) according to the fiber length under 850 nm wavelength pumping. Luminescence studies have demonstrated the influence of the tin oxide nanostructure on the rare earth optical properties especially by the modification of the absorption (850 to 1000 nm) and emission (950 to 1100 nm) by discretization of the bands, as well as on the IR emission lifetime evaluated to 10 µs

Séminaire : Measurement of the third order nonlinear susceptibility of paratellurite single crystal using Multiplex CARS

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Croissance épitaxiale par ablation laser et caractérisations de couches minces du matériau ferroélectrique SrBi2Nb2O2

RENNES1-BU Sciences Philo (352382102) / SudocSudocFranceF

Down conversion luminescence mechanism of Tb3+,Yb3+ codoped ZrO2-SiO2 nano-crystallized glasses.

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Nanoscale study of the ferroelectric properties of SrBi2Nb2O9 thin films grown by pulsed laser deposition on epitaxial Pt electrodes using atomic force microscope

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Wavelength conversion properties of Tb3+,Yb3+ codoped ZrO2-SiO2 nanocrystalized glasses.

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