Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service

Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications. Technological issues such as the trench profile, the gate oxide quality, the trench inversion layer mobility and lay-out design are discussed. Optimization of 1.8 kV Trench IGBTs using extensive numerical simulations and physical analysis is carried out. New termination techniques are proposed

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported