Digital modulator and demodulator Patent

Development of apparatus for generating output signal commensurate with information contained in input signa

From the Kubo formula to variable range hopping

Consider a multichannel closed ring with disorder. In the semiclassical treatment its conductance is given by the Drude formula. Quantum mechanics challenge this result both in the limit of strong disorder (eigenstates are not quantum-ergodic in real space) and in the limit of weak disorder (eigenstates are not quantum-ergodic in momentum space). Consequently the analysis of conductance requires going beyond linear response theory, leading to a resistor network picture of transitions between energy levels. We demonstrate that our semi-linear response theory provides a firm unified framework from which the "hopping" phenomenology of Mott can be derived.Comment: 5 pages, published version with an extended concluding paragrap

Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling

The behavior of metal oxide semiconductor field effect transistors (MOSFETs) with small aspect ratio and large doping levels is analyzed using formal perturbation techniques. Specifically, the influence of interface layers in the potential on the averaged channel conductivity is closely examined. The interface and internal layers that occur in the potential are resolved in the limit of large doping using the method of matched asymptotic expansions. This approach, together with other asymptotic techniques, provides both a pointwise description of the state variables as well as lumped current-voltage relations that vary uniformly across the various bias regimes. These current-voltage relations are derived for a variable doping model respresenting a particular class of devices

Standardized Pearson type 3 density function area tables

Tables constituting extension of similar tables published in 1936 are presented in report form. Single and triple parameter gamma functions are discussed. Report tables should interest persons concerned with development and use of numerical analysis and evaluation methods

On free loop spaces of toric spaces

Growth of the Hilbert-Poincar\"e series for the rational homology of the free loop space of a toric space is addressed. In case the toric space is a manifold, the structure of the fan dictates whether the Hilbert-Poincar\"e series has exponential growth. Applications are made to the existence of infinitely many geometrically distinct periodic geodesics

Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase

Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we predict the frequency dependent dielectric functions for nine non-Nitride wurtzite phase III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). Their complex dielectric functions are calculated in the dipole approximation by evaluating the momentum matrix elements on a dense grid of special k-points using empirical pseudopotential wave functions. Corrections to the momentum matrix elements accounting for the missing core states are made using a scaling factor which is determined by using the optical sum rules on the calculated dielectric functions for the zincblende polytypes. The dielectric function is calculated for polarizations perpendicular and parallel to the c-axis of the crystal