The distribution of attached bacteria on cellulose film and cellulose degradation rates in Lake Soyang, Korea.

Article信州大学理学部附属諏訪臨湖実験所報告 9: 69-75(1995)departmental bulletin pape

Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. From these, the origin of the ICP-induced electron trap was suggested to be V-N or a V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current.open273

Introduction on atomic layer deposition for high-k dielectric & high mobility oxide semiconductor thin film transistors

Amorphous oxide semiconductors have been widely studied for the potential use in flat panel displays such as active matrix liquid crystal display (LCD) and Organic light emitting diodes (OLEDs). Since reporting amorphous InGaZnO semiconductor thin film transistor (TFT) in 2003 & 2004, many multi-component oxide semiconductors have been intensively investigated and developed by reactive sputtering method. Very recently, the sputtered InGaZnO TFTs are already adopted in mass-production to fabricate AMOLED TVs. However, there remain several problems such as high mobility & stability issues. Also, virtual and argument reality (VR, AR) applications are rapidly emerging in display markets but the main issues are high resolution and low-voltage driving technologies. Please click Additional Files below to see the full abstract

Temperature-scaling behavior of the Hall conductivity for Hg-based superconducting thin films

The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by \sigma_{xy}=C_{1}/H+C_{2}+C_{3}H. The prefactor C_1 shows a temperature dependence of the form C_1 = A(1-t)^n near T_c, where t=T/T_c is the reduced temperature. Contrary to the previous results, C_2 also follows a temperature-scaling behavior similar to that of the coefficient C_1. The observed value of n = 1.8 - 2.3 is comparable to the previously observed values for YBa_{2}Cu_{3}O_{7-\delta} and La_{2-x}Sr_{x}CuO_{4}.Comment: 5 pages, 4 eps figure

Modifying effect of the serum level of brain-derived neurotrophic factor (BDNF) on the association between BDNF methylation and long-term cardiovascular outcomes in patients with acute coronary syndrome

IntroductionThis study investigated the potential modifying effects of the serum brain-derived neurotrophic factor (sBDNF) level on the association between BDNF methylation status and long-term cardiovascular outcomes in acute coronary syndrome (ACS) patients.MethodsFrom 2006 to 2012, hospitalized ACS patients were consecutively recruited. The sBDNF level and BDNF methylation status were assessed at baseline in 969 patients who were followed up for major adverse cardiac events (MACEs) over 5–12 years, until 2017 or death. Cox proportional hazards models were utilized to compare the time to first composite or individual MACEs between individuals with lower and those with higher average BDNF methylation levels in the low and high sBDNF groups, respectively. The modifying effects of the sBDNF and average BDNF methylation levels on first composite and individual MACEs were analyzed using Cox proportional hazards models after adjusting for potential covariates.ResultsIn the low sBDNF group, a higher average BDNF methylation level was linked to an increase in composite MACEs independent of confounding variables, but not in the high sBDNF group [HR (95 percent CI) = 1.04 (0.76–1.44)]. The interaction effect between the sBDNF and average BDNF methylation levels on composite MACEs was significant after adjusting for covariates (P = 0.008).ConclusionCombining the BDNF methylation status and sBDNF levels may help identify ACS patients who are likely to have unfavorable clinical outcomes