Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal–insulator–metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage

Single-Step Formation of ZnO/ZnWO_<i>x</i> Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

A spontaneously formed ZnO/ZnWO_<i>x</i> bilayer resistive memory via an interfacial engineering by one-step sputtering process with controllable high resistance states was demonstrated. The detailed formation mechanism and microstructure of the ZnWO_<i>x</i> layer was explored by X-ray photoemission spectroscopy (XPS) and transmission electron microscope in detail. The reduced trapping depths from 0.46 to 0.29 eV were found after formation of ZnWO_<i>x</i> layer, resulting in an asymmetric <i>I</i>–<i>V</i> behavior. In particular, the reduction of compliance current significantly reduces the switching current to reach the stable operation of device, enabling less energy consumption. Furthermore, we demonstrated an excellent performance of the complementary resistive switching (CRS) based on the ZnO/ZnWO_<i>x</i> bilayer structure with DC endurance >200 cycles for a possible application in three-dimensional multilayer stacking

ZnO_1–<i>x</i> Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

We present a ZnO_1–<i>x</i> nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO_1–<i>x</i> NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO_1–<i>x</i> NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ∼125° can be found on the ZnO_1–<i>x</i> NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system

Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWO_<i>x</i> Bilayer Structure via Interfacial Engineering

Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWO_<i>x</i> bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWO_<i>x</i>-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWO_<i>x</i> bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep operation on the ZnO-based CRS device, the maximum array numbers (<i>N</i>) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5, and 1.6 V were estimated, while the maximum array numbers increase into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V, operated by the current-sweep mode, respectively. In addition, the endurance tests show a very stable multilevel operation at each RESET-stop voltage under the current-sweep mode

Single CuO_<i>x</i> Nanowire Memristor: Forming-Free Resistive Switching Behavior

CuO_<i>x</i> nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuO_<i>x</i> nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy