FIRST PRINCIPLE INSIGHT INTO Co-DOPED MoS2 FOR SENSING NH3 AND CH4

In this work we present the atomistic computational study of the adsorption properties of Co doped MoS2 adsorbed ammonia (NH3) and methane (CH4). The adsorption distance, adsorption energy (Ead), charge transfer (Qt), bandgap, Density of States (DOS), Projected Density of States (PDOS), transport properties, sensitivity and recovery time have been reported. The diffusion property of the system was calculated using Nudge Elastic Band (NEB) method. The calculated results depict that after suitable doping of Co on MoS2 monolayer decreases the resistivity of the system and makes it more suitable for application as a sensor.  After adsorbing NH3 and CH4, Co doped MoS2 bandgap, DOS and PDOS become more enhanced. The adsorption energy calculated for NH3 and CH4 adsorbed Co doped MoS2 are -0.9 eV and -1.4 eV. The reaction is exothermic and spontaneous. The I-V curve for Co doped MoS2 for CH4 and NH3 adsorption shows a linear increase in current up to 1.4 V and 2 V, respectively, then a rapid decline in current after increasing a few volts. The Co doped MoS2 based sensor has a better relative resistance state, indicating that it can be employed as a sensor. The sensitivity for CH4 and NH3 were 124 % and 360.5 %, respectively, at 2 V. With a recovery time of 0.01s, the NH3 system is the fastest. In a high-temperature condition/environment, the Co doped MoS2 monolayer has the potential to adsorb NH3 and CH4 gas molecules. According to NEB, CH4 gas molecules on Co doped MoS2 has the lowest energy barrier as compared to NH3 gas molecules. Our results indicate that adsorbing NH3 and CH4 molecules in the interlayer is an effective method for producing Co doped MoS2 monolayers for use as spintronics sensor materials

IMPACT OF HIGH-Κ METAL OXIDE AS GATE DIELECTRIC ON THE CERTAIN ELECTRICAL PROPERTIES OF SILICON NANOWIRE FIELD-EFFECT TRANSISTORS: A SIMULATION STUDY

Standard Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are gaining prominence in low-power nanoscale applications. This is largely attributed to their proximity to physical and thermal limits, rendering them a compelling option for energy-efficient electronic devices. In this study, we hypothesized that the high-κ HfO2 in a quasi-ballistic SiNW MOSFET acts as the gate dielectric. In this case, the data from the TCAD simulation and the model demonstrated exceptional agreement. The proposed model for a SiNW MOSFET with high-κ HfO2 exhibits a consistently increasing drain current, albeit with a smaller magnitude compared to a quasi-ballistic device (QBD). Additionally, it shows reduced mobility and decreased transconductance when considering the combined effects of scattering and temperature. As gate voltage increases, temperature-induced transconductance decline in SiNW MOSFETs becomes significant. Our method is suitable for modeling scattered SiNW MOSFETs with temperature effects, as TGF values are similar in the subthreshold region for both Near Ballistic and Scattered SiNW MOSFET models

Transformative Effect of Oxygen Plasma to Upshot the Structural and Electrical Properties of Pr0.5Sr0.5MnO3 Manganites

A methodical inquiry of the outcome of oxygen plasma exposure in low bandwidth compounds belonging to the perovskite family Pr1-xSrxMnO3 manganites where x = 0.5, has been presented in this communication by comparing the structural and transport properties of the untreated and plasma treated samples. It is witnessed that the high-temperature transmission is carried out by small polarons while the low-temperature transmission is attributed to variable range polarons. The changes in the transport properties may be attributed to the structural modification due to plasma exposure as revealed by the Rietveld analysis of the X-ray diffraction pattern. Further, oxygen plasma exposure boosts the conductivity due to the integration of oxygen ions in the plasma-exposed samples, thereby rendering them oxygen-rich.Comment: 21 pages, 9 Figures, 3 Table