Neutron irradiation effect on SiPMs up to Φneq\Phi_{neq} = 5 ×\times 1014^{14} cm−2^{-2}

Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to $\Phi_{neq}$ = 5$\times$10$^{14}$ cm$^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30$^\circ$C and $+$30$^\circ$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light

A Comprehensive Characterization of the TI-LGAD Technology

Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology

Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications

Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.Comment: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austri

Investigation of nitrogen enriched silicon for particle detectors

This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. The article features comparative studies using secondary ion mass spectrometry, electrical characterization, edge transient current technique, source and thermally stimulated current spectroscopy measurements on sensors that were irradiated up to a fluence of 1015 neq/cm2. Irradiations were performed with 23 MeV protons at the facilities in Karlsruhe (KIT), with 24 GeV/c protons at CERN (PS-IRRAD) and neutrons at the research reactor in Ljubljana. Secondary ion mass spectrometry measurements give evidence for nitrogen loss after processing, which makes gaining from nitrogen enrichment difficult

The second production of RSD (AC-LGAD) at FBK

In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed

High-precision 4D tracking with large pixels using thin resistive silicon detectors

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize RSD sensors produced by Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel pitches are used in the analysis: 200 × 340, 450 × 450, and 1300 × 1300 μm2. At gain = 30, the 450 × 450 μm2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 μm concurrently, while the 1300 × 1300 μm2 pixel achieves 30 ps and 30 μm, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.Comment: 28 pages, 23 figures submitted to NIM