Supplementary document for Robust single frequency index-patterned laser design using a Fourier design method - 6327486.pdf

Supplementary paper

Low loss photonic nanocavity via dark magnetic dipole resonant mode near metal

The dielectric-semiconductor-dielectric-metal 4 layered structure is a well-established configuration to support TM hybrid plasmonic modes, which have demonstrated significant advantages over pure photonic modes in structures without metal to achieve low loss resonant cavities at sub-diffraction limited volumes. The photonic modes with TE characteristics supported by the same 4 layered structure, on the other hand, are less studied. Here we show that a low loss photonic mode with TE01 characteristics exists in the dielectric-semiconductor-dielectric-metal 4 layered structure if a truncated cylindrical disk is chosen as the semiconductor core. This mode exhibits the lowest cavity loss among all resonant modes, including both pure photonic and hybrid plasmonic modes, at cavity radius <150 nm and within the wavelength range 620 nm to 685 nm, with a footprint ~0.83 (λ/2neff)2, physical size ~0.47 (λ/2neff)3 and a mode volume down to 0.3 (λ/2neff)3. The low cavity loss of this TE01 mode is attributed to its substantially reduced radiation loss to the far field by the creation of image charges through the metal response. Because of the low mode penetration in the metal, this photonic mode show equally low cavity loss near industry relevant metals such as Cu. Our study demonstrates an alternative to hybrid plamonic modes and metallo-dielectric modes to achieve low loss cavities with extremely small footprints

Direct visualization of phase-matched efficient second harmonic and broadband sum frequency generation in hybrid plasmonic nanostructures

Second harmonic generation and sum frequency generation (SHG and SFG) provide effective means to realize coherent light at desired frequencies when lasing is not easily achievable. They have found applications from sensing to quantum optics and are of particular interest for integrated photonics at communication wavelengths. Decreasing the footprints of nonlinear components while maintaining their high up-conversion efficiency remains a challenge in the miniaturization of integrated photonics. Here we explore lithographically defined AlGaInP nano (micro)structures/ Al2O3/Ag as a versatile platform to achieve efficient SHG/SFG in both waveguide and resonant cavity configurations in both narrow- and broadband infrared (IR) wavelength regimes (1300–1600nm). The effective excitation of highly confined hybrid plasmonic modes at fundamental wavelengths allows efficient SHG/SFG to be achieved in a waveguide of a cross-section of 113nm×250nm, with a mode area on the deep subwavelength scale (λ2/135) at fundamental wavelengths. Remarkably, we demonstrate direct visualization of SHG/SFG phase-matching evolution in the waveguides. This together with mode analysis highlights the origin of the improved SHG/SFG efficiency. We also demonstrate strongly enhanced SFG with a broadband IR source by exploiting multiple coherent SFG processes on 1µm diameter AlGaInP disks/Al2O3/Ag with a conversion efficiency of 14.8%MW−1 which is five times the SHG value using the narrowband IR source. In both configurations, the hybrid plasmonic structures exhibit >1000 enhancement in the nonlinear conversion efficiency compared to their photonic counterparts. Our results manifest the potential of developing suchnanoscale hybrid plasmonic devices for state-of-the-art on-chip nonlinear optics applications

Highly Efficient Inverted Light-Emitting Diodes Based on Vertically Aligned CdSe/CdS Nanorod Layers Fabricated by Electrophoretic Deposition

Inverted colloidal-nanocrystal-based LEDs (NC-LEDs) are highly interesting and invaluable for large-scale display technology and flexible electronics. Semiconductor nanorods (NRs), in addition to the tunable wavelengths of the emitted light (achieved, for example, by the variation of the NR diameter or the diameter of core in a core–shell configuration), also exhibit linearly polarized emission, a larger Stokes shift, faster radiative decay, and slower bleaching kinetics than quantum dots (QDs). Despite these advantages, it is difficult to achieve void-free active NR layers using simple spin-coating techniques. Herein, we employ electrophoretic deposition (EPD) to make closely packed, vertically aligned CdSe/CdS core/shell nanorods (NRs) as the emissive layer. Following an inverted architecture, the device fabricated yields an external quantum efficiency (EQE) of 6.3% and a maximum luminance of 4320 cd/m2 at 11 V. This good performance can be attributed to the vertically aligned NR layer, enhancing the charge transport by reducing the resistance of carrier passage, which is supported by our finite element simulations. To the best of our knowledge, this is the first time vertically aligned NR layers made by EPD have been reported for the fabrication of NC-LEDs and the device performance is one of the best for inverted red NR-LEDs. The findings presented in this work bring forth a simple and effective technique for making vertically aligned NRs, and the mechanism behind the NR-LED device with enhanced performance using these NRs is illustrated. This technique may prove useful to the development of a vast class of nanocrystal-based optoelectronics, including solar cells and laser devices