Switching Cells and Power Devices - An Introduction

International audienc

New monolithic multi-terminal Si-chips integrating a power converter phase-leg for specific applications

International audienceThe paper deals with the monolithic integration of a power converter phase leg. It focuses on the integration of a power phase leg consisting of a VDMOS and an IGBT. This association is suitable for monolithic power integration in silicon. Different monolithic chips integrating phase legs were proposed and discussed in this paper. Interesting advantages can be brought by the monolithic integration of the converter phase leg. These advantages include power chips realization simplification, control of gate transistors with respect to constant voltages (DC-link or ground-0V)

Amélioration des performances du thyristor à l'état bloqué en haute température

National audienceNous présentons dans cet article une architecture thyristor silicium présentant de meilleures caractéristiques à l'état bloqué en haute température. L'amélioration de la tenue en tension, par rapport à un thyristor classique, est rendue possible par une utilisation judicieuse de contacts Schottky sur la face arrière d'un thyristor classique. La présence d'un tel contact permet de réduire l'injection de trous de l'émetteur P+ face arrière dans la base N-, et par conséquent de diminuer le courant de fuite à l'état bloqué et ainsi améliorer la tenue en tension directe à températures élevées. Nous étudions, à partir de simulation TCAD, l'effet de la technique sur une structure thyristor 5 kV symétrique en tension sur ses caractéristiques électriques que nous comparerons à celles d'une structure thyristor classiques et à courtscircuits d'anode

Monolithic Complementary Multi-terminal RC-IGBT Chips for Compact Multi-phase Power Converter

International audienceThe paper deals with the monolithic/“on-chip” integration of multi-phase power converters in medium power applications. It focuses on the integration of the power converter within two original multi-terminal complementary substrates (P and N substrates). Interesting advantages can be brought by the integration of the multi-phase converter within only two complementary multi-terminal power chips. These advantages include power chips realization simplification, multi-terminal chips assembly simplification, gate driver circuit simplification and low EMI through the circuit board

EEG Signals Classification Using Support Vector Machine

International audienceWe address with this paper some real-life healthy and epileptic EEG signals classification. Our proposed method is based on the use of the discrete wavelet transform (DWT) and Support Vector Machine (SVM). For each EEG signal, five wavelet decomposition level is applied which allow obtaining five spectral sub-bands correspond to five rhythms (Delta, Theta, Alpha, Beta and gamma). After the extraction of some features on each sub-band (energy, standard deviation, and entropy) a moving average (MA) is applied to the resulting features vectors and then used as inputs to SVM to train and test. We test the method on EEG signals during two datasets: normal and epileptics, without and with using MA to compare results. Three parameters are evaluated such as sensitivity, specificity, and accuracy to test the performances of the used methods

Impact of a backside Schottky contact on the thyristor characteristics at high temperature

International audienceIn this paper, a thyristor structure presenting improved electrical characteristics at high temperature is analysed through 2D physical simulations. The replacement of the P emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature. A fine-tune of the anode side configuration will improve the forward off-state behaviour with only a negligible on-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements that the anode short in terms of off-state characteristics, while keeping the reverse blocking capability

Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature

International audienceIn high current, high voltage, high temperature (T > 125 °C) power applications, commercially available conventional silicon thyristors are not suited because they present high leakage current. In this context, this paper presents a high-symmetrical (voltage) thyristor structure that presents a lower leakage current and higher breakover voltage as compared with the conventional thyristor at T > 125 °C. It is shown through 2-D physical simulations that the replacement of the P-emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward blocking state at high temperature. A fine tune of the anode side configuration will improve the forward OFF-state behavior with only a negligible ON-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements in terms of OFF-state forward break over voltage and leakage current and also presents a high reverse blocking voltage

RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: Physical analysis and application to the integration of a multiphase generic power converter using the "two-chip" approach

International audienceThe RC-IGBT-thyristor is a bidirectional current device proposed as an elementary structure for the integration of a multiphase converter using the "two-chip” integration approach [1]. In this paper, 2D simulations are on one hand used to study the impact of using trenches filled with dielectric [2] on thestatic and dynamic performance of the RC-IGBT-thyristor and on the other hand to validate the operating modes of the common anode and common cathode power chips that make use of the RCIGBT-thyristor that has trenches filled with dielectric on the backside. In the RC-IGBT-Thyristor withtrenches, the trenches are placed between N+ anode regions to allow the turn-on of the thyristor sections during the RC-IGBT-thyristor reverse conducting mode. The use of these trenches allows reducing the lengths of N+/P+ anode diffusion regions (as compared to the case of the RC-IGBTThyristor[1]) and also improves the uniformity of the current density distribution both in the forward and reverse conducting modes of the RC-IGBT-thyristor. The RC-IGBT-thyristor with trenches filled with dielectric is then used to create the two monolithic common anode and common cathode power chips. These three-pole power chips, were simulated separately and then associated to form an Hbridge converter

Etude et conception de structures bidirectionnelles en courant et en tension commandées par MOS

TOULOUSE3-BU Sciences (315552104) / SudocSudocFranceF

Fail-safe switching-cells architectures based on monolithic on-chip fuse

International audienceIn this work, we propose a new concept of fail-safe switching cells based on the use of integrated fuses. These fuses allow the circuit to be partially isolated and reconfigured, which therefore becomes fault tolerant and prevents total shut down. We focused our work on the design and 3D simulation by finite elements method of monolithic fuses integrated on silicon substrate, taking into account static and dynamic specifications. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and preliminary practical tests at medium voltage are reported. The effect of a coating using silicone gel around the fuses is analyzed to improve the cut-off capability