Investigação de propriedades de filmes finos de Al2O3 para aplicação em dispositivos eletrônicos

O escopo deste trabalho é a obtenção de filmes finos de óxido de alumínio (alumina) através da evaporação resitiva de alumínio, seguido da oxidação térmica em atmosfera adequada (ar ou rica em O2), com varaiação do tempo e da temperatura do tratamento térmico. A investigação deste material tem por finalidade sua utilização como camada isolante em transistores de efeito de campo, mais especificamente do tipo metal-óxido-semicondutor (MOSTFET), visando a diminuição da corrente de fuga no gate e aumento do controle de corrente no canal de condução. Além de se tratar de dipositivo transparente, que permite a interação com luz. A análise das propriedades ópticas e estruturais dos filmes investigados mostra que na temperatura de 550ºC ocorre uma completa oxidação do material, a qual é acelerada em atmosfera de oxigênio. Valores de resistividade elétrica concordam com a tendência de oxidação revelada pelos dados de Difração de Raios X (DRX). Além disso, resultados de espectroscopia no infravermelho (FTIR) e Raman, em bom acordo com resultados de DRX, apresentam-se estrutura y-Al2O3. Amostras de alumina depositadas sobre substrato de vidro sodalime apresentam silício cristalino na interface com o Al2O3 advindo do substrato, enquanto amostras de Al2O3 sobre SnO2 não apresentaram esse material. A heterojunção entre SnO2:4at%Sb e Al2O3 foi caracterizada por DRX, Microscopia eletrônica de varredura (MEV) e Microscopia Confocal, que mostraram alta rugosidade do filme isolante sobre o semicondutor, e um provável processo de difusão entre as camadas isolante e semicondutora, em concordância com resultados de corrente x voltage (IxV), obtidos a partir da construção de um dispositivo simples, com contatos de Sn, ao qual foram submetidos dispositivos com diferentes números de camadas isolantes...The goal of this work is is to obtain aluminum oxide (alumina) thin films deposited by resistive evaporation of Al, followed by thermal oxidation in proper atmosphere (air or O2-rich), with varying time and temperature of thermal annealing. The investigation of this material of this material aims using this material for application as insulating layer in field effect transistors, specifically metal-oxide-semiconductor (MOSFET), seeking for low leakage current and efficient current control in the conduction channel. Besides, it is a transparent device, which allows interaction with light. Analysis of optical and structural properties of investigated films reveals that temperature of 550ºC is responsable for fair oxidation, which is accelerated in oxygen-rich atmosphere. Results of electrical resistivity agree with the oxidation, which is accelerated in oxygen-rich atmosphere. Results of electrical resistivity agree with the oxidation tendency found in the X-ray diffraction data (XRD). Moreover, results of infrared spectroscopy (FTIR) and Raman show the presence of y-Al2O3, also found in XRD data. Alumina samples deposited on soda-line glass substrates leads to the presence of crystalline Si, coming from the substrate leads to the presence of crystalline Si, coming from the substrate, whereas... (Complete abstract click electronic access below

Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 °C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. © 2013 Elsevier Ltd and Techna Group S.r.l

Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Sol-gel spin-coating SnO2 thin films were deposited and processed through positive photolithography (liftoff), avoiding surface interaction with gaseous oxygen species and leading to samples with higher stability and data reproducibility, when submitted to electrical characterization. Processing includes: (1) a narrow conduction channel, (2) the assembly of electric contacts by ultrasound soldering, (3) deposition of an insulating layer, preventing the surface contact with atmospheric oxygen, which contributes for reliable measurements and the possibility of measuring SnO2 matrix properties without influence of adsorbed oxygen. Lightly Er-doped SnO2 sample (0.05 at.%), processed by this manner, has allowed the observation of a maximum about 50 K, in the temperature-dependent resistivity curve, which has not been found previously. This result is probably related to the combination of free electron concentration, which grows with temperature, and the grain boundary scattering, which decreases with temperature, and is the dominant mechanism for sol-gel SnO2. The processing also assures a remarkable reproducibility in the decay of photo-induced conductivity, yielding reliability to apply a modeling for the determination of important decay parameters, such as capture energy and grain boundary potential barrier.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Gold nanoparticles functionalized with 4,4'-dithiobiphenyl blended with CuS in PMMA for switching memory devices

A switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA) is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long term stability over the whole experiment duration (30 days)

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO2/Al2O3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO2, deposited by sol-gel-dip-coating technique, and Al thermally annealed in O-2-rich atmosphere, leads to fair insulation when the number of aluminum oxide layers is 4, with 0.3% of the current lost through the gate terminal as leakage current. This insulation is not obtained for devices with alumina layer treated for long time, under room atmosphere, due to degradation of the insulating film and interfusion with the conduction channel even using Sb-doped SnO2. The annealing of Al deposited on soda-lime glass substrate leads also to the formation of a Si layer, crystallized at Substrate/Al2O3 interface. The conclusion is that for an efficient insulation the thermal annealing must be short and then, O-2-rich atmospheres are preferred.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Abnormal resistive switching in electrodeposited Prussian White thin films

Prussian White (PW) layers were deposited on Au/Cr/Si substrates by electrodeposition and characterized by different techniques. Scanning electron microscopy (SEM) images and Raman mapping reveal a uniform and homogeneous deposit while scanning transmission electron microscopy (STEM) images disclose the grain boundary pattern and the thickness of 300 nm of the PW layer. Resistive switching (RS) effect with an ON/OFF ratio of about 102 was observed. The RS mechanism was investigated from the log-log current voltage plots. Ionic conduction was observed with an activation energy of 0.4 eV that could be associated with potassium ions as possible charge carriers at the grain boundaries. The endurance characteristics were investigated and a stable abnormal RS was observed for consecutive 500 cycles. Moreover, the retention was also evaluated and the high resistive state (HRS) and low resistive state (LRS) were stable up to 1000 s