37 research outputs found
Bayesian inference of nanoparticle-broadened x-ray line profiles
A single and self-contained method for determining the crystallite-size
distribution and shape from experimental x-ray line profile data is presented.
We have shown that the crystallite-size distribution can be determined without
assuming a functional form for the size distribution, determining instead the
size distribution with the least assumptions by applying the Bayesian/MaxEnt
method. The Bayesian/MaxEnt method is tested using both simulated and
experimental CeO data. The results demonstrate that the proposed method
can determine size distributions, while making the least number of assumptions.
The comparison of the Bayesian/MaxEnt results from experimental CeO with
TEM results is favorableComment: 43 pages, 13 Figures, 5 Table
Flux-Induced Vortex in Mesoscopic Superconducting Loops
We predict the existence of a quantum vortex for an unusual situation. We
study the order parameter in doubly connected superconducting samples embedded
in a uniform magnetic field. For samples with perfect cylindrical symmetry, the
order parameter has been known for long and no vortices are present in the
linear regime. However, if the sample is not symmetric, there exist ranges of
the field for which the order parameter vanishes along a line, parallel to the
field. In many respects, the behavior of this line is qualitatively different
from that of the vortices encountered in type II superconductivity. For samples
with mirror symmetry, this flux-induced vortex appears at the thin side for
small fluxes and at the opposite side for large fluxes. We propose direct and
indirect experimental methods which could test our predictions.Comment: 6 pages, Latex, 4 figs., uses RevTex, extended to situations far from
cylindrical symmetr
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Comparison of electrical CD measurements and cross-section lattice-plane counts of sub-micrometer features replicated in Silicon-on-Insulator materials
Electrical test structures of the type known as cross-bridge resistors have been patterned in (100) epitaxial silicon material that was grown on Bonded and Etched-Back Silicon-on-Insulator (BESOI) substrates. The CDs (Critical Dimensions) of a selection of their reference segments have been measured electrically, by SEM (Scanning-Electron Microscopy) cross-section imaging, and by lattice-plane counting. The lattice-plane counting is performed on phase-contrast images made by High-Resolution Transmission-Electron Microscopy (HRTEM). The reference-segment features were aligned with <110> directions in the BESOI surface material. They were defined by a silicon micromachining process which results in their sidewalls being atomically-planar and smooth and inclined at 54.737{degree} to the surface (100) plane of the substrate. This (100) implementation may usefully complement the attributes of the previously-reported vertical-sidewall one for selected reference-material applications. The SEM, HRTEM, and electrical CD (ECD) linewidth measurements that are made on BESOI features of various drawn dimensions on the same substrate is being investigated to determine the feasibility of a CD traceability path that combines the low cost, robustness, and repeatability of the ECD technique and the absolute measurement of the HRTEM lattice-plane counting technique. Other novel aspects of the (100) SOI implementation that are reported here are the ECD test-structure architecture and the making of HRTEM lattice-plane counts from both cross-sectional, as well as top-down, imaging of the reference features. This paper describes the design details and the fabrication of the cross-bridge resistor test structure. The long-term goal is to develop a technique for the determination of the absolute dimensions of the trapezoidal cross-sections of the cross-bridge resistors reference segments, as a prelude to making them available for dimensional reference applications