21 research outputs found

    Piezo-and pyroelectric GAAS sensors integrated in one crystal with GAAS FET

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    One of important problems of recent electronics is non-cooled pyroelectric and piezoelectric sensors. They are realized usually in a hybrid integrated chip where thousands of ferroelectric ceramic elements are integrated with transistor matrix. Reported research work is devoted to the possibility of realization of one-crystal pyroelectric sensor. We revealed new effect of symmetry decrease that is used as a basis to develop one-crystal pyroelectric or piezoelectric sensor array using III-V crystals. In feasible sensor devices, the transducer, the amplifier and read-out electronics would be the various parts of one crystal chip. Voltage sensitivity of semi-insulating GaAs-type temperature sensor is the same as one of PZT pyroelectric ceramics. However, proposed device will be fully made from GaAs and related crystal layers by the standard in the micro-electronics technolog

    Acoustic emission and methods of its registration (review)

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    Lately a tendency is observed for the steady growth of requirements applied both to construction materials as well as to the methods of estimation of their reliability and quality. Particular attention is paid to the development of new, physically reasonable criteria of structural durability of materials, based on comprehensive study of the phenomena, which form the basis of processes of deformation and fracture. Such approach is supposed to enhance our understanding of the nature of durability and mechanisms of fracture of materials on different scale levels. This is possible only when analysis of these phenomena is accomplished by means of modern physical research methods as well as applying acoustic emission techniques for diagnostics of the fractures

    Defect diagnostics in devices via acoustic emission

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    The research was conducted to explore conditions triggering degradation and deterioration processes in heterostructures using methods of acoustic emission. Current, flowing through materials, causes significant temperature gradients and thermo-mechanical stress (up to 107 Pa) that contributes to the development of undesirable microplasticity of the material. The research disclosed peculiarities of acoustic emission in n+-n-p- and p+-p-n- structures of A3B5 compounds under direct current in a process of their natural deterioration, and interdependence between the acoustic emission and developments in their electrical characteristics. The research facilitates direct and timely detection of defects and microcracks in different devices operating under threshold parameters and being influenced by external physical/mechanical forces generated from direct current and ultrasonic fluctuation

    The study of ferroelectric thin films on silicon substrates

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    In recent years, intensive development of field-effect transistors on metal-ferroelectric-semiconductor for use, as non-volatile memory elements. The principle of operation of these devices is as follows. Ferroelectric film contains a large number of domains, having a certain vector of electric polarization. Total polarization of the individual domains gives spontaneous (spontaneous) polarization film (non-zero resultant dipole moment per unit volume of the sample). Module and spatial orientation of the spontaneous polarization can be changed under the influence of an external electric field. In strong fields, the film becomes a single-domain. The application of a strong electric field in opposite directions on a certain part of the surface can lead to a reversal of the ferroelectric domains of the film within this area that lends itself to registration. Thus, the effect of polarization in ferroelectric films allows you to create non-volatile memory devices, data carriers which are the domain reversal. These devices have several advantages over traditionally used magnetic and optical data carriers. The purpose of this paper is to study the possibility of using ferroelectric films of complex oxides deposited on original technology on a silicon substrate as a recording media storage devices for external storage

    The analysis of defects propagation in navigating electronic devices

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    Defects in the form of microcracks in ??8?12 contacts of passive electronic components of navigating devices operating at different temperatures and pressure were analyzed. Research results have demonstrated the possibility of early prevention of potential accidents. Microscopic studies are systematized depending on various physical and chemical influences on devices. The mathematical model for defects definition in local points of contacts with an error of about 5 – 7.5 % has been applie

    Diagnostics of nano-particles on a surface and in volume of a solid body

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    In this research work the results of change of In, Sn, Bi, Pb nano-layers melting temperature on a surface and in Al and Ge matrixes depending on thickness and interaction character of components by methods of electron microscopy and x-ray diffractometry are presented. Layered film systems Al-Me-Al, Ge-Me-Ge (Me = Pb, Sn, Bi, In) were the object of researches. The purpose of work was the research of the general law of noted systems melting depending on the specific size and conditions of their formation. Layered film systems prepared by consecutive condensation of components in vacuum and their evaporation from independent sources. The film microstructure before and after melting was investigated by method of electron microscopy. The structure and phase composition of film systems defined using x-ray diffractometry. Melting temperatures and specified eutectic temperatures for In, Sn, Bi and Pb binary systems with aluminium and germanium registered by differential method. It is shown, that for layered film systems Al-Me-Al, Ge-Me-Ge (Me = Sn, Bi, Pb, In) eutectic temperature decreases with reduction of thickness of Me film. The urgency of the work is caused due to necessity of understanding the physics of processes in nano-systems, and wide use nano-objects in modern technologie

    Acoustic emission and methods of its registration (review)

    Get PDF
    Lately a tendency is observed for the steady growth of requirements applied both to construction materials as well as to the methods of estimation of their reliability and quality. Particular attention is paid to the development of new, physically reasonable criteria of structural durability of materials, based on comprehensive study of the phenomena, which form the basis of processes of deformation and fracture. Such approach is supposed to enhance our understanding of the nature of durability and mechanisms of fracture of materials on different scale levels. This is possible only when analysis of these phenomena is accomplished by means of modern physical research methods as well as applying acoustic emission techniques for diagnostics of the fractures

    The analysis of defects propagation in navigating electronic devices

    Get PDF
    Defects in the form of microcracks in ??8?12 contacts of passive electronic components of navigating devices operating at different temperatures and pressure were analyzed. Research results have demonstrated the possibility of early prevention of potential accidents. Microscopic studies are systematized depending on various physical and chemical influences on devices. The mathematical model for defects definition in local points of contacts with an error of about 5 – 7.5 % has been applie

    Diagnostics of nano-particles on a surface and in volume of a solid body

    Get PDF
    In this research work the results of change of In, Sn, Bi, Pb nano-layers melting temperature on a surface and in Al and Ge matrixes depending on thickness and interaction character of components by methods of electron microscopy and x-ray diffractometry are presented. Layered film systems Al-Me-Al, Ge-Me-Ge (Me = Pb, Sn, Bi, In) were the object of researches. The purpose of work was the research of the general law of noted systems melting depending on the specific size and conditions of their formation. Layered film systems prepared by consecutive condensation of components in vacuum and their evaporation from independent sources. The film microstructure before and after melting was investigated by method of electron microscopy. The structure and phase composition of film systems defined using x-ray diffractometry. Melting temperatures and specified eutectic temperatures for In, Sn, Bi and Pb binary systems with aluminium and germanium registered by differential method. It is shown, that for layered film systems Al-Me-Al, Ge-Me-Ge (Me = Sn, Bi, Pb, In) eutectic temperature decreases with reduction of thickness of Me film. The urgency of the work is caused due to necessity of understanding the physics of processes in nano-systems, and wide use nano-objects in modern technologie

    ΠŸΠ΅Ρ€ΡΠΏΠ΅ΠΊΡ‚ΠΈΠ²Π½Ρ‹Π΅ направлСния развития Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ

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    Π£ Ρ€ΠΎΠ±ΠΎΡ‚Ρ– Π½Π°Π²Π΅Π΄Π΅Π½ΠΎ огляд сучасних Ρ‚Π΅Ρ…Π½Ρ–Ρ‡Π½ΠΈΡ… Ρ€ΠΎΠ·Ρ€ΠΎΠ±ΠΎΠΊ Π² сфСрі Π½Π°Π½ΠΎΠΌΠ°ΡΡˆΡ‚Π°Π±Π½ΠΎΡ— Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Ρ–Ρ— Ρ– Π½Π°Π΄Π°Ρ”Ρ‚ΡŒΡΡ опис ΠΏΠ΅Ρ€Π΅Π²Π°Π³ моТливостСй Ρ—Ρ… використання. Розглянуто Π΅Π²ΠΎΠ»ΡŽΡ†Ρ–ΡŽ Ρ€ΠΎΠ·Ρ€ΠΎΠ±ΠΊΠΈ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Ρ–Ρ— ΠΉ довСдСння сучасних конструкцій Π΄ΠΎ Π½Π°Π½ΠΎΡ€ΠΎΠ·ΠΌΡ–Ρ€Π½ΠΈΡ… Ρ€ΠΎΠ·ΠΌΡ–Ρ€Ρ–Π², Ρƒ Ρ‚ΠΎΠΌΡƒ числі Π΄ΠΈΠ½Π°ΠΌΡ–Ρ‡Π½ΠΈΠΉ Π½Π°Π½ΠΎΡ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ Π½Π° основі надструктурних наночасток, Π²ΡƒΠ³Π»Π΅Ρ†Π΅Π²ΠΈΡ… Π½Π°Π½ΠΎΡ‚Ρ€ΡƒΠ±ΠΎΠΊ, Π½Π°Ρ‡ΠΈΠ½Π΅Π½ΠΈΡ… Ρ„ΡƒΠ»Π΅Ρ€Π΅Π½Π°ΠΌΠΈ Ρ‚ΠΎΡ‰ΠΎ. Π£ сфСрі сучасних Π½Π°Π½ΠΎ- Ρ– Π±Ρ–ΠΎΡ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³Ρ–ΠΉ досягнСння Π²ΠΈΠΌΠ°Π³Π°ΡŽΡ‚ΡŒ застосування Ρ‚ΠΎΡ‡Π½ΠΎΡ— Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Ρ–Ρ—, Π΄Π΅ Π½Π΅ΠΌΠΎΠΆΠ»ΠΈΠ²ΠΎ Π·Π΄Ρ–ΠΉΡΠ½ΡŽΠ²Π°Ρ‚ΠΈ Π²ΠΈΠΌΡ–Ρ€ΡŽΠ²Π°Π½Π½Ρ Π·Π° допомогою Ρ‚Ρ€Π°Π΄ΠΈΡ†Ρ–ΠΉΠ½ΠΈΡ… ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ–Π². Однак, Ρ€ΠΎΠ·Ρ€ΠΎΠ±ΠΊΠ° Π½Π°Π½ΠΎΡ€ΠΎΠ·ΠΌΡ–Ρ€Π½ΠΎΠ³ΠΎ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Π° – ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΠ°, пов’язана Π½Π΅ Ρ‚Ρ–Π»ΡŒΠΊΠΈ Π· Ρ€ΠΎΠ·ΠΌΡ–Ρ€ΠΎΠΌ, Π°Π»Π΅ Ρ‚Π°ΠΊΠΎΠΆ Π· ΠΏΠΎΡ‚Ρ€Π΅Π±ΠΎΡŽ Ρƒ ΠΌΠ°Ρ‚Π΅Ρ€Ρ–Π°Π»Π°Ρ… Ρ–Π· Π½ΠΎΠ²ΠΈΠΌΠΈ Ρ„Ρ–Π·ΠΈΠΊΠΎ-Ρ…Ρ–ΠΌΡ–Ρ‡Π½ΠΈΠΌΠΈ Ρ‚Π° Ρ‚Π΅Ρ€ΠΌΠΎΠ΄ΠΈΠ½Π°ΠΌΡ–Ρ‡Π½ΠΈΠΌΠΈ властивостями. Π’ΠΎΠΌΡƒ особливу ΡƒΠ²Π°Π³Ρƒ ΠΏΡ€ΠΈΠ΄Ρ–Π»Π΅Π½ΠΎ Π½ΠΎΠ²ΠΎΠΌΡƒ напряму Π² Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Ρ–Ρ— – просування Π² сфСрі створСння Ρ‚Π΅ΠΏΠ»ΠΎΠ²ΠΈΡ… Π΄Π°Ρ‚Ρ‡ΠΈΠΊΡ–Π² Ρ–Π· використанням молСкулярних Ρ– Π±Ρ–ΠΎΠ»ΠΎΠ³Ρ–Ρ‡Π½ΠΈΡ… часток, Π° Ρ‚Π°ΠΊΠΎΠΆ Π½Π°Π½ΠΎΡ€ΠΎΠ·ΠΌΡ–Ρ€Π½ΠΈΡ… надструктур.This paper gives an overview of current technical developments in the field of nanoscale thermometry and the advantages to their use is describen. The evolution of the development of thermometry and bringing contemporary designs to nanoscale dimensions, including dynamic nanothermometer superstructure nanoparticles, carbon nanotubes, fullerenes etc. stuffed. In the field of modern nano- and biotechnology achievements require accurate thermometry, where it is impossible to carry out measurements using traditional methods. However, the development of nanoscale thermometer is a problem related to not only in size but also with the need for new materials with physics, chemical and thermodynamic properties. Therefore, special attention is given to the direction in thermometry as development of thermal sensors using molecular and biological particles and nanoscale superstructure.Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ ΠΏΡ€ΠΈΠ²Π΅Π΄Π΅Π½ ΠΎΠ±Π·ΠΎΡ€ соврСмСнных тСхничСских Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΎΠΊ Π² сфСрС Π½Π°Π½ΠΎΠΌΠ°ΡΡˆΡ‚Π°Π±Π½ΠΎΠΉ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ ΠΈ Π΄Π°Π½ΠΎ описаниС прСимущСств возмоТностСй ΠΈΡ… использования. РассмотрСна ΡΠ²ΠΎΠ»ΡŽΡ†ΠΈΡ Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ ΠΈ довСдСния соврСмСнных конструкций Π΄ΠΎ Π½Π°Π½ΠΎΡ€Π°Π·ΠΌΠ΅Ρ€Π½Ρ‹Ρ… Ρ€Π°Π·ΠΌΠ΅Ρ€ΠΎΠ², Π² Ρ‚ΠΎΠΌ числС динамичСский Π½Π°Π½ΠΎΡ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ Π½Π° основС надструктурных наночастиц, ΡƒΠ³Π»Π΅Ρ€ΠΎΠ΄Π½Ρ‹Ρ… Π½Π°Π½ΠΎΡ‚Ρ€ΡƒΠ±ΠΎΠΊ, Π½Π°Ρ‡ΠΈΠ½Π΅Π½Π½Ρ‹Ρ… Ρ„ΡƒΠ»Π»Π΅Ρ€Π΅Π½Π°ΠΌΠΈ Ρ‚.ΠΏ. Π’ области соврСмСнных достиТСний Π½Π°Π½ΠΎ- ΠΈ Π±ΠΈΠΎΡ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ трСбуСтся ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ Ρ‚ΠΎΡ‡Π½ΠΎΠΉ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ, Π³Π΄Π΅ Π½Π΅Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡΡƒΡ‰Π΅ΡΡ‚Π²Π»ΡΡ‚ΡŒ измСрСния с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ Ρ‚Ρ€Π°Π΄ΠΈΡ†ΠΈΠΎΠ½Π½Ρ‹Ρ… ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ². Однако Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠ° Π½Π°Π½ΠΎΡ€Π°Π·ΠΌΠ΅Ρ€Π½ΠΎΠ³ΠΎ Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€Π° являСтся ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΠΎΠΉ, связанной Π½Π΅ Ρ‚ΠΎΠ»ΡŒΠΊΠΎ с Ρ€Π°Π·ΠΌΠ΅Ρ€ΠΎΠΌ, Π½ΠΎ Ρ‚Π°ΠΊΠΆΠ΅ с ΠΏΠΎΡ‚Ρ€Π΅Π±Π½ΠΎΡΡ‚ΡŒΡŽ Π² ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»Π°Ρ… с Π½ΠΎΠ²Ρ‹ΠΌΠΈ Ρ„ΠΈΠ·ΠΈΠΊΠΎ-химичСскими ΠΈ тСрмодинамичСскими свойствами. ΠŸΠΎΡΡ‚ΠΎΠΌΡƒ особоС Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ ΡƒΠ΄Π΅Π»Π΅Π½ΠΎ Π½ΠΎΠ²ΠΎΠΌΡƒ Π½Π°ΠΏΡ€Π°Π²Π»Π΅Π½ΠΈΡŽ Π² Ρ‚Π΅Ρ€ΠΌΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ – созданию Ρ‚Π΅ΠΏΠ»ΠΎΠ²Ρ‹Ρ… Π΄Π°Ρ‚Ρ‡ΠΈΠΊΠΎΠ² с использованиСм молСкулярных ΠΈ биологичСских частиц, Π° Ρ‚Π°ΠΊΠΆΠ΅ Π½Π°Π½ΠΎΡ€Π°Π·ΠΌΠ΅Ρ€Π½Ρ‹Ρ… свСрхструктур
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