Dark conductivity of CdS as a function of S-vapor pressure during heat treatment between 500 deg C and 700 deg C

Cadmium sulfide dark conductivity as function of sulfur vapor pressure during heat treatment between 500 and 700 deg

Assessment of the international workshop on CdS solar cells

General problems relating to the basic understanding of CdS/Cu2S solar cell operation, to material aspects of the cell and to manufacturing methods and cell engineering are discussed

X-ray and electron damage, and photochemical reactions in CdS single crystals and layers, and annealing of these defects Final report

X-ray and electron damage and photochemical reactions in CdS single crystals and layers with defect annealin

Dark conductivity of CdS as a function of S-vapor pressure during heat treatment between 500 deg and 700 deg C

Dark conductivity, photoconductivity, and luminescence of cadmium sulfide crystals heat treated in sulfur or cadmium vapor

Production and annealing of intrinsic defects in X-Ray irradiated CdS single crystals

Production and annealing of intrinsic defects in X-ray irradiated cadmium sulfide single crystal

Further search for a neutral boson with a mass around 9 MeV/c2

Two dedicated experiments on internal pair conversion (IPC) of isoscalar M1 transitions were carried out in order to test a 9 MeV/c2 X-boson scenario. In the 7Li(p,e+e-)8Be reaction at 1.1 MeV proton energy to the predominantly T=0 level at 18.15 MeV, a significant deviation from IPC was observed at large pair correlation angles. In the 11B(d,n e+e-)12C reaction at 1.6 MeV, leading to the 12.71 MeV 1+ level with pure T=0 character, an anomaly was observed at 9 MeV/c2. The compatibility of the results with the scenario is discussed.Comment: 12 pages, 5 figures, 2 table

Evaporated and recrystallized CdS layers Technical report no. 11

Evaporation and recrystallization of cadmium sulfide layers - vapor depositio

High field CdS detector for infrared radiation

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery

High field CdS detector for infrared radiation

An infrared radiation detector including a cadmium sulfide platelet having a cathode formed on one of its ends and an anode formed on its other end is presented. The platelet is suitably doped such that stationary high-field domains are formed adjacent the cathode when based in the negative differential conductivity region. A negative potential is applied to the cathode such that a high-field domain is formed adjacent to the cathode. A potential measuring probe is located between the cathode and the anode at the edge of the high-field domain and means are provided for measuring the potential at the probe whereby this measurement is indicative of the infrared radiation striking the platelet