Low Temperature Characterization of FDSON MOSFETs WOLTE

International audienc

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation

This paper reports a new methodology to monitor L-dependent mobility degradation based on empirical modeling of experimental results. This method allows benchmarking the impact on mobility degradation of different technological modules, thus giving some guidelines for device optimization

New Experimental Insight into Ballisticity of Transport in Strained Bulk MOSFETs

International audienc

First CMOS Integration of Ultra Thin Body and BOX (UTB2) Structures on Bulk Direct Silicon Bonded (DSB)

National audienc

Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

International audienc

High velocity Si-nanodot : a candidate for SRAM applications at 16nm node and below

International audienc

Gate-all-around technology: Taking advantage of ballistic transport?

International audienc

Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.

National audienc