49 research outputs found

    Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

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    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.Comment: (v2) Added hyper-links; (v3) A typo correcte

    Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

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    CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.Comment: 2011 International Workshop on Future Linear Colliders (LCWS11), Granada, Spain, 26-30 September 201

    Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

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    CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch (20μm\sim 20 \mu m) and low material budget (0.20.3%X0\sim 0.2-0.3\% X_0) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity epitaxial layers leads to the better radiation hardness and allows the implementation of accelerated readout circuits. The TowerJazz 0.18μm0.18 \mu m CMOS process being one of the most relevant examples recently became of interest for several future detector projects. The most imminent of these project is an upgrade of the Inner Tracking System (ITS) of the ALICE detector at LHC. It will be followed by the Micro-Vertex Detector (MVD) of the CBM experiment at FAIR. Other experiments like ILD consider CPS as one of the viable options for flavour tagging and tracking sub-systems

    Optimisation of CMOS pixel sensors for high performance vertexing and tracking

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    CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.Comment: Presented at the Vienna Conference on Instrumentation 2013 4 pages, 5 figure

    Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics

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    The long term goal of the CERN Experimental Physics Department R&D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several small test chips with sensor and circuit prototypes and transistor test structures. One of the main questions to be addressed was how to optimize the sensor in the presence of significant in-pixel circuitry. In this paper this optimization is described as well as the experimental results from the MLR1 run confirming its effectiveness. A second submission investigating wafer-scale stitching has just been completed. This work has been carried out in strong synergy with the ITS3 upgrade of the ALICE experiment

    Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics

    Get PDF
    The long term goal of the CERN Experimental Physics Department R&D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several small test chips with sensor and circuit prototypes and transistor test structures. One of the main questions to be addressed was how to optimize the sensor in the presence of significant in-pixel circuitry. In this paper this optimization is described as well as the experimental results from the MLR1 run confirming its effectiveness. A second submission investigating wafer-scale stitching has just been completed. This work has been carried out in strong synergy with the ITS3 upgrade of the ALICE experiment
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