Lateral Fractal Formation by Crystallographic Silicon Micromachining

A novel wafer-scale silicon fractal fabrication method is presented here for forming pyramids only in the lateral direction using the crystal orientation of silicon. Fractals are fabricated in silicon by masking only the corners (corner lithography) of a cavity in silicon with silicon nitride, where the shape is determined by the crystal {111} planes of the silicon. The octahedral cavity shaped by the {111} planes was previously only used for forming octahedral fractals in all directions, but by using a planar silicon dioxide hard-mask on a silicon (100) wafer, the silicon octahedral cavity is “cut in half”. This creates a pyramid with sharper edges and vertices at its base than those determined by just the {111} planes. This allows selective corner lithography patterning at the vertices of the base while leaving the apex unpatterned, leading to lateral growing of pyramidal fractals. This selective patterning is shown mathematically and then demonstrated by creating a fractal of four generations, with the initial pyramid being 8 µm and the two final generations being of submicron size.</p

Method for manufacturing a nanstructure

The invention relates to a method for fabricating a nanostructure, comprising the selection of a carrier for the material of the nanostructure during the formation of the same, wherein the carrier is provided with a shape that corresponds with the final shape of the nanostructure, and wherein the nanostructure material is applied on the carrier in a predetermined thickness and following the shape of the carrier. The material is removed substantially isotropically from the side facing away from the carrier, with the result that material that is not removed is left on a place or places determined by the shape of the carrier

A METHOD FOR MAKING A 3D NANOSTRUCTURE HAVING A NANOSUBSTRUCTURE, AND AN INSULATING PYRAMID HAVING A METALLIC TIP, A PYRAMID HAVING NANO-APERTURES AND HORIZONTAL AND/OR VERTICAL NANOWIRES OBTAINABLE BY THIS METHOD

The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of : i) providing a mold comprising at least one sharp concave corner; ii) conformational depositing at least one structural material in the sharp concave corner; iii) isotropically removing structural material; iv) depositing at least one other structural material; v) removing earlier deposited structural material; vi) forming a nanosubstructure; and vii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure

A method for making a 3D nanostructure having a nanosubsructure, and an insulating pyramid having a metallic tip, a pyramid having nano-apertures and horizontal and/or vertical nanowires obtainable by this method

The invention relates to a method for making a 3D nanostructure having a nanosubstructure comprising the steps of:\ud 1. providing a mold comprising at least one sharp concave corner\ud 2. conformational depositing at least one structural material in the sharp concave corner\ud 3. isotropically removing structural material\ud 4. depositing at least one other structural material\ud 5. removing earlier deposited structural material\ud 6. forming a nanosubstructure and \ud 7. removing the mold thereby providing the 3D nanostructure having the nanosubstructur

Method Of Manufacturing A Plurality Of Through-Holes In A Layer Of Material

A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), - depositing a second layer of material (240) on the base material in the cavity (280), and - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask

A method of manufacturing a plurality of through-holes in a layer of material

A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), - depositing a second layer of material (240) on the base material in the cavity (280), and - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask

A method for making a 3d nanostructure having a nanosubstructure, such as an insulating pyramid having a metallic tip

The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of:i) providing a mold comprising at least one sharp concave corner;ii) conformational depositing at least one structural material in the sharp concave corneriii) isotropically removing structural material;iv) depositing at least one other structural material;v) removing earlier deposited structural material;vi) forming a nanosubstructure; andvii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure

A method for making a 3D nanostructure having a nanosubstructure, and an insulating pyramid having a metallic tip, a pyramid having a nano-apertures and horizontal and/or vertical nanowires obtainable by this method

The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of: i) providing a mold comprising at least one sharp concave corner; ii) conformational depositing at least one structural material in the sharp concave corner iii) isotropically removing structural material; iv) depositing at least one other structural material; v) removing earlier deposited structural material; vi) forming a nanosubstructure; and vii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure

Method for making a 3d nanostructure having a nanosubstructure, and an insulating pyramid having a metallic tip, a pyramid having nano-apertures and horizontal and/or vertical nanowires obtainable by this method

The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of: i) providing a mold comprising at least one sharp concave corner; ii) conformational depositing at least one structural material in the sharp concave corner; iii) isotropically removing structural material; iv) depositing at least one other structural material; v) removing earlier deposited structural material; vi) forming a nanosubstructure; and vii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure

Lateral Fractal Formation by Crystallographic Silicon Micromachining

A novel wafer-scale silicon fractal fabrication method is presented here for forming pyramids only in the lateral direction using the crystal orientation of silicon. Fractals are fabricated in silicon by masking only the corners (corner lithography) of a cavity in silicon with silicon nitride, where the shape is determined by the crystal {111} planes of the silicon. The octahedral cavity shaped by the {111} planes was previously only used for forming octahedral fractals in all directions, but by using a planar silicon dioxide hard-mask on a silicon (100) wafer, the silicon octahedral cavity is “cut in half”. This creates a pyramid with sharper edges and vertices at its base than those determined by just the {111} planes. This allows selective corner lithography patterning at the vertices of the base while leaving the apex unpatterned, leading to lateral growing of pyramidal fractals. This selective patterning is shown mathematically and then demonstrated by creating a fractal of four generations, with the initial pyramid being 8 µm and the two final generations being of submicron size