Si (100) Üzerine Elektrokimyasal Anodizasyon Tekniği ile Silisyum Nitrür’ün Formasyonunun Analizi

Using electrochemical anodization technique, the silicon nitride ( Si3N4 ) thin film has been deposited on the p-type Si(100) substrate at the ambient temperature. This technique is an economical and practical way to produces a very thin film like the Si3N4 on the p-Si substrate. Very thin nitride passivation of Si(100) stabilizes its surface or interface very well and reduces the interface states density. However, the passivated surface exhibits a substantial degradation due to the exposure to air after passivation. In this study, silicon nitride thin film have been deposited via electrochemical anodization technique on the p-Si(100) surface. Crystalline silicon has been observed by Raman spectrometry. The atomic force microscopy (AFM) have been used to carry the surface morphological properties of the deposited film. Both analysis of formation of silicon nitride (Si3N4) on the p-Si(100) and surface degradation was investigated with the high-resolution X-ray diffraction (XRD) technique.Elektrokimyasal anodizasyon tekniği kullanılarak, silisyum nitrür ( Si3N4 ) ince filmi oda sıcaklığında p-tipi Si (100) zemin üzerine oluşturuldu. Bu teknik p-tipi Si (100) zemin üzerine (Si3N4) gibi çok ince film üretmek için hem pratik hemde ekonomiktir. Si(100)’ın çok ince nitrür ile pasivasyonu, onun yüzey veya arayüzeylerini stabilize hale getirir ve arayüzey durum yoğunluğunu azaltır. Fakat, passive edilmiş yüzey daha sonra, hava pasivasyonuna maruz kalması yüzünden bozulmaya uğradığı gözlenir. Bu çalışmada, silisyum nitrür ince filmi p- Si(100) yüzey üzerine elektrokimyasal anodizasyon tekniği yoluyla oluşturuldu. Kristalize silisyum, Raman Spektrometresi ile gözlendi. Atomik güç mikroskobu (AFM), oluşturulan filmin yüzey morfoloji özelliklerini elde etmek için kullanıldı. Hem silisyum nitrür’ün p-Si(100) üzerine oluşumunun analizi hemde yüzeyin bozulması yüksek-çözünürlüklü X-ray diffraction (XRD) tekniği ile incelendi

Controlling the surface morphologies, structural and magnetic properties of electrochemically fabricated Ni–Co thin film samples via seed layer deposition

In this study, the influence of the seed layer deposition on the surface morphologies, structural and magnetic features of the thin film samples of Ni–Co was investigated and results are reported. The samples were produced on indium tin oxide (ITO)-coated glass substrates with and without a seed layer by electrochemical deposition technique under a constant deposition potential. To explore the effect of the seed layer current density (SLCD) on thin films, prior to actual deposition, Ni–Co seed layers were introduced on the ITO substrates at varying current densities. The EDX analysis indicated that the samples exhibited identical deposit compositions and an anomalous co-deposition behavior regardless of the SLCD. The Ni–Co samples fabricated under this study had a face centered cubic (fcc) phase structure with preferred crystallographic orientation being in the [111] direction perpendicular to the sample plane. Furthermore, the crystallite size, crystallinity, particle size and surface roughness of the samples showed a strong dependency on applied SLCD. All Ni–Co samples, irrespective of the SLCD, featured stripe magnetic domain structure and in-plane magnetic hysteresis loop with an out-of-plane magnetization component. It was also observed that while a semi-hard magnetic characteristic was detected in all samples, the coercive field varied with the SLCD. © 2020, Springer Science+Business Media, LLC, part of Springer Nature

Deposition potential dependence of composition, microstructure, and surface morphology of electrodeposited Ni-Cu alloy films

Composition, microstructure, and surface morphology of Ni-Cu alloy films electrodeposited at different deposition potentials have been investigated. The microstructural analysis carried out by using X-ray diffraction (XRD) confirmed that all Ni-Cu films are polycrystalline in nature and possess face-centered cubic structure. XRD analysis also revealed that the (111) peak of the Ni-Cu alloy films splits into two as Cu-rich and Ni-rich peaks and the peak intensities change depending on the deposition potential and hence the film composition. Compositional analysis of Ni-Cu films carried out by energy dispersive X-ray spectroscopy showed that Ni content within the films increases as the deposition potential becomes more negative. The morphological analysis performed by using a scanning electron microscopy and an atomic force microscopy revealed that the surface morphology changes significantly with applied deposition potential. Furthermore, a direct correlation is observed between the surface roughness and lattice strain. © Springer Science+Business Media, LLC 2012

Si (100) Üzerine Elektrokimyasal Anodizasyon Tekniği ile Silisyum Nitrür’ün Formasyonunun Analizi

Using electrochemical anodization technique, the silicon nitride ( Si3N4 ) thin film has been deposited on the p-type Si(100) substrate at the ambient temperature. This technique is an economical and practical way to produces a very thin film like the Si3N4 on the p-Si substrate. Very thin nitride passivation of Si(100) stabilizes its surface or interface very well and reduces the interface states density. However, the passivated surface exhibits a substantial degradation due to the exposure to air after passivation. In this study, silicon nitride thin film have been deposited via electrochemical anodization technique on the p-Si(100) surface. Crystalline silicon has been observed by Raman spectrometry. The atomic force microscopy (AFM) have been used to carry the surface morphological properties of the deposited film. Both analysis of formation of silicon nitride (Si3N4) on the p-Si(100) and surface degradation was investigated with the high-resolution X-ray diffraction (XRD) technique.Elektrokimyasal anodizasyon tekniği kullanılarak, silisyum nitrür ( Si3N4 ) ince filmi oda sıcaklığında p-tipi Si (100) zemin üzerine oluşturuldu. Bu teknik p-tipi Si (100) zemin üzerine (Si3N4) gibi çok ince film üretmek için hem pratik hemde ekonomiktir. Si(100)’ın çok ince nitrür ile pasivasyonu, onun yüzey veya arayüzeylerini stabilize hale getirir ve arayüzey durum yoğunluğunu azaltır. Fakat, passive edilmiş yüzey daha sonra, hava pasivasyonuna maruz kalması yüzünden bozulmaya uğradığı gözlenir. Bu çalışmada, silisyum nitrür ince filmi p- Si(100) yüzey üzerine elektrokimyasal anodizasyon tekniği yoluyla oluşturuldu. Kristalize silisyum, Raman Spektrometresi ile gözlendi. Atomik güç mikroskobu (AFM), oluşturulan filmin yüzey morfoloji özelliklerini elde etmek için kullanıldı. Hem silisyum nitrür’ün p-Si(100) üzerine oluşumunun analizi hemde yüzeyin bozulması yüksek-çözünürlüklü X-ray diffraction (XRD) tekniği ile incelendi