R.F. planar magnetron sputtered ZnO films II: Electrical properties

The electrical properties of r.f. planar magnetron sputtered ZnO films are studied by means of current-voltage, capacitance-voltage and Van der Pauw measurements.\ud \ud These films are applied as piezoelectric transducers in micromechanical sensors and actuators. Their piezoelectric behaviour strongly depends on the electric properties.\ud \ud A conduction model for the polycrystalline ZnO layers is presented. This model gives a good description of the electrical behaviour, and is useful in understanding the piezoelectric properties of the films studied

Limiting mechanisms for photon recycling in thin-film GaAs solar cells

Photon recycling mechanisms in single junction thin-film GaAs solar cells are evaluated in this study. Modelling supported by experimentally obtained results is used in order to correlate the reflectance of the cell's rear layers, the photon recycling probability, and the solar cell performance. Solar cells with different top and bottom metallization configurations are produced, and their performance is analyzed from the optical and electrical point of view. It is shown that the photon recycling probability increases with the rear mirror reflectance and solar cell thickness, which results in the increase of the devices open circuit voltage. However, the front grid coverage, usually disregarded in rear mirror focused studies, strongly reduces the photon recycling probability. Furthermore, perimeter and interface recombination hinder the internal radiative efficiency of the solar cells, preventing further increase of the devices' open circuit voltage as a result of improvements of the rear mirror reflectivity. In order to exploit the significant benefit of increased photon recycling probability to the solar cell performance, these limiting mechanisms need to be properly addressed

Proton irradiation induced GaAs solar cell performance degradation simulations using a physics-based model

In this study a recently developed physics-based model to describe the performance degradation of GaAs solar cells upon electron irradiation is applied to analyze the effects of proton irradiation. For this purpose GaAs solar cells with significantly different architectures are subjected to a range of proton irradiation fluences up to 5×1012 H+/cm2. The resulting J−V and EQE characteristics of the cells are measured and compared with the simulations from the model. The model requires individual degradation constants for the SRH lifetimes and the surface recombination velocities as an input. In this study these constants were obtained from the recently determined associated constants for electron irradiation using the particles non-ionizing energy loss (NIEL) values for conversion. The good fit between the simulated and experimentally obtained results demonstrate that this is a valid approach. Moreover, it suggests that the physics based model allows for a good prediction of GaAs cell performance under particle irradiation of any kind independent of the particular cell architecture as long as the layer thicknesses and doping levels are known. In addition the applied proton irradiation levels in this study were not found to induce additional Cu-related degradation in the investigated thin-film cells, indicating that the use of copper foil as a convenient carrier and rear contact does not require reconsideration for thin-film cells intended for space applications

Increased Performance of Thin-film GaAs Solar Cells with Improved Rear Interface Reflectivity

The highest efficiencies in single-junction solar cells are obtained with devices based on GaAs. As this material is reaching the limit in material quality, the optimization of the design of the cell becomes more important. In this study we implement a patterning technique to the bottom contact layer of thin-film GaAs solar cells that increases the reflectance of photons to the active layers. Both shallow junction and deep junction devices were evaluated, and for deep junction cells, both the short circuit current and the open circuit voltage increase with the reflectance. The radiative saturation current density also decreases, indicating increased photon recycling. Detailed model simulations are performed to further evaluate the mechanisms leading to the improved performance of the deep junction design. Based on the same model, the possibilities for further improvements utilizing the deep junction are also identified

Enabling high-efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management

We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented

Quantum Dot-Based Thin-Film III–V Solar Cells

In this work, we report our recent results in the development of thin-film III–V solar cells fabricated by epitaxial lift-off (ELO) combining quantum dots (QD) and light management structures. Possible paths to overcome two of the most relevant issues posed by quantum dot solar cells (QDSC), namely, the degradation of open circuit voltage and the weak photon harvesting by QDs, are evaluated both theoretically and experimentally. High open circuit voltage QDSCs grown by molecular beam epitaxy are demonstrated, both in wafer-based and ELO thin-film configuration. This paves the way to the implementation in the genuine thin-film structure of advanced photon management approaches to enhance the QD photocurrent and to further optimize the photovoltage. We show that the use of light trapping is essential to attain high-efficiency QDSCs. Based on transport and rigorous electromagnetic simulations, we derive design guidelines towards light-trapping enhanced thin-film QDSCs with efficiency higher than 28% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30% efficiency is deemed to be feasible. Towards this goal, results on the development and integration of optimized planar and micro-patterned mirrors, diffractive gratings and broadband antireflection coatings are presented.acceptedVersionPeer reviewe

Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off

Contains fulltext : 174583.pdf (publisher's version ) (Closed access) Contains fulltext : 174583.pdf (preprint version ) (Open Access)35th IEEE Photovoltaic Specialists Conference, Hawaiian Convention Center Honolulu, Hawaii, June 20-25, 2010

InGaP/GaAs inverted dual junction solar cells for CPV applications using metal-backed epitaxial lift-off

Contains fulltext : 84345.pdf (publisher's version ) (Open Access)6th International Conference on Concentrating Photovoltaic, ICPV-

Arsenic Formation on GaAs during Etching in HF Solutions: Relevance for the Epitaxial Lift-Off Process

Contains fulltext : 112596.pdf (publisher's version ) (Open Access