12 research outputs found

    Spin effects in single-electron tunneling in magnetic junctions

    Full text link
    Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation, spin fluctuations and tunnel magnetoresistance is analysed numerically in the case of a nonmagnetic island. It is shown that spin fluctuations are significant in magnetic as well as in nonmagnetic junctions.Comment: 14 pages, 3 eps-figures include

    Current and power spectrum in a magnetic tunnel device with an atomic size spacer

    Full text link
    Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed, which relaxation processes can enhance or reduce fluctuations leading either to a super-Poissonian or a sub-Poissonian shot noise.Comment: 12 pages, 4 figure

    Influence of microwave fields on the electron transport through a quantum dot in the presence of a direct tunneling between leads

    Full text link
    We consider the time-dependent electron transport through a quantum dot coupled to two leads in the presence of the additional over-dot (bridge) tunneling channel. By using the evolution operator method together with the wide-band limit approximation we derived the analytical formulaes for the quantum dot charge and current flowing in the system. The influence of the external microwave field on the time-average quantum dot charge, the current and the derivatives of the average current with respect to the gate and source-drain voltages has been investigated for a wide range of parameters.Comment: 28 Pages, 11 Postscript figure
    corecore