Low Noise 1 THz–1.4 THz Mixers Using Nb/Al-AlN/NbTiN SIS Junctions

We present the development of a low noise 1.2 THz and 1.4 THz SIS mixers for heterodyne spectrometry on the Stratospheric Observatory For Infrared Astronomy (SOFIA) and Herschel Space Observatory. This frequency range is above the limit for the commonly used Nb quasi particle SIS junctions, and a special type of hybrid Nb/AlN/NbTiN junctions has been developed for this project.We are using a quasi-optical mixer design with two Nb/AlN/NbTiN junctions with an area of 0.25 µm^2. The SIS junction tuning circuit is made of Nb and gold wire layers. At 1.13 THz the minimum SIS receiver uncorrected noise temperature is 450 K. The SIS receiver noise corrected for the loss in the LO coupler and in the cryostat optics is 350–450 K across 1.1–1.25 THz band. The receiver has a uniform sensitivity in a full 4–8 GHz IF band. The 1.4 THz SIS receiver test at 1.33–1.35 THz gives promising results, although limited by the level of available LO power. Extrapolation of the data obtained with low LO power level shows a possibility to reach 500 K DSB receiver noise using already existing SIS mixer

Development of Low Noise THz SIS Mixer Using an Array of Nb/Al-AlN/NbTiN Junctions

We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Infrared Astronomy, (SOFIA). The mixer uses an array of two 0.24 mum^2 Nb/Al-AlN/NbTiN SIS junctions with the critical current density of 30-50 kA/cm^2 . An on-chip double slot planar antenna couples the mixer circuit with the telescope beam. The mixer matching circuit is made with Nb and gold films. The mixer IF circuit is designed to cover 4-8 GHz band. A test receiver with the new mixer has a low noise operation in 0.87-1.12 THz band. The minimum receiver noise measured in our experiment is 353 K (Y = 1.50). The receiver noise corrected for the loss in the LO injection beam splitter is 250 K. The combination of a broad operation band of about 250 GHz with a low receiver noise makes the new mixer a useful element for application at SOFIA

Sub micron area Nb/AlO(x)/Nb tunnel junctions for submillimeter mixer applications

In this paper, we report on a fabrication process developed for submicron area tunnel junctions. We have fabricated Nb/AlO(x)/Nb tunnel junctions with areas down to 0.1 sq micron using these techniques. The devices have shown excellent performance in receiver systems up to 500 GHz and are currently in use in radio astronomy observatories at 115, 230, and 500 GHz

Position and energy-resolved particle detection using phonon-mediated microwave kinetic inductance detectors

We demonstrate position and energy-resolved phonon-mediated detection of particle interactions in a silicon substrate instrumented with an array of microwave kinetic inductance detectors (MKIDs). The relative magnitude and delay of the signal received in each sensor allow the location of the interaction to be determined with ≲ 1mm resolution at 30 keV. Using this position information, variations in the detector response with position can be removed, and an energy resolution of σ_E = 0.55 keV at 30 keV was measured. Since MKIDs can be fabricated from a single deposited film and are naturally multiplexed in the frequency domain, this technology can be extended to provide highly pixelized athermal phonon sensors for ∼1 kg scale detector elements. Such high-resolution, massive particle detectors would be applicable to rare-event searches such as the direct detection of dark matter, neutrinoless double-beta decay, or coherent neutrino-nucleus scattering

Fabrication of wide-IF 200–300 GHz superconductor–insulator–superconductor mixers with suspended metal beam leads formed on silicon-on-insulator

We report on a fabrication process that uses SOI substrates and micromachining techniques to form wide-IF SIS mixer devices that have suspended metal beam leads for rf grounding. The mixers are formed on thin 25 µm membranes of Si, and are designed to operate in the 200–300 GHz band. Potential applications are in tropospheric chemistry, where increased sensitivity detectors and wide-IF bandwidth receivers are desired. They will also be useful in astrophysics to monitor absorption lines for CO at 230 GHz to study distant, highly redshifted galaxies by reducing scan times. Aside from a description of the fabrication process, electrical measurements of these Nb/Al–AlNx/Nb trilayer devices will also be presented. Since device quality is sensitive to thermal excursions, the new beam lead process appears to be compatible with conventional SIS device fabrication technology

Quasiparticle Trapping in Microwave Kinetic Inductance Strip Detectors

Microwave Kinetic Inductance Detectors (MKIDs) are thin-film, superconducting resonators, which are attractive for making large detector arrays due to their natural frequency domain multiplexing at GHz frequencies. For X-ray to IR wavelengths, MKIDs can provide high-resolution energy and timing information for each incoming photon. By fabricating strip detectors consisting of a rectangular absorber coupled to MKIDs at each end, high quantum efficiency and spatial resolution can be obtained. A similar geometry is being pursued for phonon sensing in a WIMP dark matter detector. Various materials have been tested including tantalum, tin, and aluminum for the absorbing strip, and aluminum, titanium, and aluminum manganese for the MKID. Initial Ta/Al X-ray devices have shown energy resolutions as good as 62 eV at 6 keV. A Ta/Al UV strip detector with an energy resolution of 0.8 eV at 4.9 eV has been demonstrated, but we find the coupling of the MKIDs to the absorbers is unreliable for these thinner devices. We report on progress probing the thicknesses at which the absorber/MKID coupling begins to degrade by using a resonator to inject quasiparticles directly into the absorber. In order to eliminate the absorber/MKID interface, a modified design for implanted AlMn/Al UV strip detectors was developed, and results showing good transmission of quasiparticles from the absorber to MKID in these devices are presented

Onset of dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits