Design of resonant-tunneling diodes for a GaAs integrated SRAM

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.Includes bibliographical references (p. 173-178).by Rajni J. Aggarwal.Ph.D

Heterostructures for High Performance Devices

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications.DARPA/NCIPTJoint Services Electronics Program Contract DAAL03-92-C-0001National Science FoundationToshiba Corporation Ltd.Charles S. Draper LaboratoriesHertz Foundation FellowshipVitesse SemiconductorGTE LaboratoriesNational Science Foundation FellowshipDARPA/MOSISTexas Instruments, Inc.U.S. Army Research Office Grant DAAL03-92-G-025

Compound Semiconductor Materials and Devices

Contains table of contents for Part I, table of contents for Section 1, reports on fourteen research projects and a list of publications.Defense Advanced Research Projects Agency/National Center for Integrated Photonics TechnologyFannie and John Hertz Foundation Graduate FellowshipJoint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Graduate FellowshipNTT CorporationNational Science FoundationU.S. Navy - Office of Naval ResearchToshiba CorporationAT&T Bell Laboratories Graduate Fellowshi

Heterostructures for High Performance Devices

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications.Charles S. Draper Laboratories Contract DL-H-418483DARPA/NCIPTJoint Services Electronics Program Contract DAAL03-89-C-0001Joint Services Electronics Program Contract DAAL03-92-C-0001IBM Corporation FellowshipNational Science Foundation FellowshipVitesse SemiconductorGTE LaboratoriesCharles S. Draper LaboratoriesElectronics and Telecommunications Research Institute (ETRI) FellowshipNational Science Foundation/Northeastern UniversityTRW SystemsU.S. Army Research OfficeNational Science FoundationAT&T Bell Laboratories FellowshipNational Science Foundation Grant ECS 90-0774

Compound Semiconductor Materials and Devices

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on fourteen research projects and a list of publications.Defense Advanced Research Projects Agency/National Center for Integrated Photonics TechnologyJoint Services Electronics Program Grant DAAH04-95-1-0038MIT Lincoln LaboratoryNational Science Foundation Graduate FellowshipU.S. Navy - Office of Naval ResearchAT&T Bell Laboratories FellowshipU.S. Army - Ft. MeadeNTT CorporationNational Science FoundationLockheed-Martin Corporatio

Nations within a nation: variations in epidemiological transition across the states of India, 1990–2016 in the Global Burden of Disease Study

18% of the world's population lives in India, and many states of India have populations similar to those of large countries. Action to effectively improve population health in India requires availability of reliable and comprehensive state-level estimates of disease burden and risk factors over time. Such comprehensive estimates have not been available so far for all major diseases and risk factors. Thus, we aimed to estimate the disease burden and risk factors in every state of India as part of the Global Burden of Disease (GBD) Study 2016

Heterostructures for High-Performance Devices

Contain table of contents for Part I, table of contents for Section 1, an introduction, reports on seventeen research projects and a list of publications.Advanced Research Projects Agency/National Center for Integrated Photonics TechnologyFannie and John Hertz Foundation Graduate FellowshipJoint Services Electronics Program Contract DAAL03-92-C-0001Joint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Graduate FellowshipNational Security AgencyMotorola CorporationNational Science FoundationU.S. Navy - Office of Naval ResearchU.S. Army Research OfficeAT&T Foundation Graduate Fellowshi