Grundlegende Untersuchungen zu neuen Konzepten fuer Ultrakurzpuls-Laser. Teilvorhaben: Realisierung eines kompakten Ti:Saphir Kurzpulslasers Abschlussbericht

SIGLEAvailable from TIB Hannover: DtF QN1(89,47) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Isolelektrische Dotierung des Halbleitersystems InP/Ga0,47In0,53As und deren Einfluss auf die Eigenschaften bipolarer Bauelemente

SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Mikroanalyse von Oberflaechen durch Laser- und Ionenstrahltechniken Ultrakurze Laserpulse an Halbleitern und Metallen. Abschlussbericht

The mass-spectrometric analysis of surfaces by a laserbeam is done with ns-laserpulses, which lead to a strong thermal load of the material and to melting of the illuminated sample area. Using ultrashort laserpulses the physical processes inducing evaporaton of surface-atoms are unknown. In this report we present our results using ps-laserpulses for desorption as well as for on-resonant multi-photon-ionisation of emitted neutral particles. We demonstrate a useful yield of 10"-"3 for a desorption rate of less than 1/1000 of a monolayer per pulse. The presented desorption system is a very sensitive detection system, e.g., for surface contaminants. (orig.)Die massenspektrometrische Analyse von Festkoerperoberflaechen mittels Laserstrahlen wird bislang mit ns-Pulsen durchgefuehrt, die zu einer erheblichen thermischen Belastung des Festkoerpers bis hin zum Aufschmelzen der Oberflaeche fuehren. Bei Uebergang zu ultrakurzen Laserpulsen ist nicht geklaert, welche physikalischen Prozesse zur Zerstaeubung von Oberflaechenatomen fuehren koennen. Die vorliegenden Untersuchungen mit einem ps-Lasersystem, das sowohl zur Desorption als auch zur nichtresonanten Nachionisation emittierter Neutralteilchen eingesetzt wird, geben wichtige Hinweise zum Verstaendnis der bei der Zerstaeubung ablaufenden Vorgaenge. Die Experimente zeigen, dass bei einem Abtrag von weniger als 1/1000 einer Monolage pro Laserpuls eine nutzbare Ausbeute (useful yield) von 10"-"3 erreicht wird. Damit ist die vorgestellte Desorptionsanlage als extrem emfindliches Detektionssystem beispielsweise fuer Oberflaechenverunreinigung verwendbar. (orig.)SIGLEAvailable from TIB Hannover: F93B456+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

HTSL-Grundlagen zur Technologie. Teilprojekt: Grundlagen zur Technologie von HTSL-Verbindungstechnik in der Mikroelektronik Vergleichende Analyse des Y-Ba-Cu-O- und Bi-Sr-Ca-Cu-O-Systems. 3. Zwischenbericht

Available from TIB Hannover: F99B957+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Grundlagen der Laser-Oberflaechenwechselwirkung am Beispiel der Desorption mit ultrakurzen Laserpulsen: Theorie und Experiment Abschlussbericht

Picosecond Laser Desorption Mass Spectrometry (ps-LDMS) is based on nonthermal particle emission from semiconductor surfaces by ps laser pulses. Laser desorption has been described by Monte-Carlo simulations. By saturated nonresonant ionization a standard-free quantification in ps-LDMS could be achieved. Saturation was proved using a new dopple pulse method. Any semiconductor surface damage could be excluded by simultaneous measurement of the second harmonic generation. The potentials of ps-LDMS for surface analysis are demonstrated by determining contaminations on different silicon surfaces and comparing the results with those from static time-of-flight SIMS. (WEN)SIGLEAvailable from TIB Hannover: F97B129+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Neue Quellen fuer die Gasphasenepitaxie. Teilbereich: Schichtstrukturen fuer Detektoren. Teilvorhaben: Wachstum von Schichtstrukturen fuer Detektoren und OEIC mit alternativen Gruppe-V-Quellen Schlussbericht

As part of the main point of support 'alternative precursors for the vapour phase epitaxy' we have investigated the usability of the metalorganic (MO) precursors tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs) for the MOVPE process. The present standard precursors PH_3 and AsH_3 are highly toxic, thermally stable and have a high vapour pressure. In contrast, the metalorganics are liquids with low vapour pressures and in addition they are less toxic and less stable. So the use of these precursors can strongly reduce the risk potential of the MOVPE process. Beside, the consumption of TBP, TBAs can be reduced considerably, compared to that of the standard hydrides, due to the more effective decomposition during the growth process. This results in a reduced amount of toxic residual gases, which have to be removed in a scrubber unit. The disposal of the toxic waste is an unneglectable cost and time factor in industrial production. For the material system InP/InGaAs it was shown in typical MOVPE growth processes (selective epitaxy, overgrowth, doping, PIN detectors), that the switching from standard hydrides to the MO precursors can be done without causing trouble. Essentially it was demonstrated, that the growth mechanisms using TBP and TBAs were the same as using the hydrides. Therefore the replacement of PH_3 and AsH_3 with TBP, TBAs only result in advantages from the point of view of the growth process. For the industrial acceptance of the new precursors it will be finally nececsary, that the precursor manufacturer will be able to produce TBP and TBAs reproducible in adequate quantities and qualities. In addition extended investigations have to be done to demonstrate the usability of the MO precursors in Al containing material systems (oxygen and carbon problem). (orig.)Available from TIB Hannover: DtF QN1(60,11) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Physikalische Analytik von Hochtemperatur-Supraleitern Schlussbericht

With 20 refs., 3 tabs., 67 figs.Available from TIB Hannover: FR 6775 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Integrierte Komponenten fuer optisches Abtastsystem auf Silizium-Basis Abschlussbericht

Optical memory and optical data storage will play a leading role in future multimedia applications. One component of the optical disk system is the optical pick-up. The aim of this project was the development of the basic technology for the fabrication of a new ultralight optical pick-up system based on integrated components on silicon. Using both microelectronic and optoelectronic components, the projected pick-up should meet the criteria of the industrial mass production. In order to guarantee an easily adjustable outcoupling of the laser light, our alternative pick-up concept uses micromechanically etched silicon facettes. A complete process technology for anisotropic wet etching of silicon facettes was developed. The design of the silicon motherboard was proposed. A set of different photomasks was fabricated. Within the project, the lithography and the pattern-transfer part were optimized down to lateral dimensions of 25 nm using modified multilayer-resist systems. The developed technology will be used for the fabrication of optical grids and holograms. Additionally, molds for imprinting of nanostructures can be performed by the developed techniques. For characterization of optical components a home made measurement technique was builted-up. According to the BMBF order dated from 0.1.04.1997 this research project was stopped, because the cooperation agreement of the industrial partner company was withdrawn. Until May 31, 1997 no legally binding request of another cooperating company was submitted to the BMBF. (orig.)SIGLEAvailable from TIB Hannover: F98B420+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Massiv Paralleles Nanoimprint (MAPANA). Resist-Qualifizierung und Mehrlagen-Resist-Systeme fuer die Nanoimprint-Technologie Schlussbericht

SIGLEAvailable from TIB Hannover: DtF QN1(103,55) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Untersuchung der technologischen Einfluesse auf das Koppelverhalten paralleler GaAlAs-Rippenwellenleiter Abschlussbericht

Copy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman