9 research outputs found
Investigation of drain current transient behavior in SLS TFTs with the DLTS technique
In this work, the study of drain current overshoot transients of thin
film transistors (TFTs) fabricated by excimer laser sequential lateral
solidification (ELA SLS) process is presented. Drain current transient
behavior, is ascribed to carrier capture/emission processes within the
transistors’ Si body, and represents complex mechanisms differently
responding at dark and under illumination conditions. Additionally, the
thickness of the Si body film, which is an important parameter for the
material structure evaluation, ranged from 30nm to 100nm. The results
were stemmed by deep level transient spectroscopy (DLTS) technique and
measurements were conducted within the temperature interval of 200K to
400K. The impact of illumination, contributes mainly at lower
temperatures through electron-hole generation processes, compensating
though carrier freeze-out phenomena
Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors
The present work investigates the switch-on transient decay in
polycrystalline thin-film transistors. The decay is found to follow the
stretched exponential relaxation model independently of the
polycrystalline film properties and the device bias conditions or
operating temperature. The temperature dependence of the stretched
exponential relaxation allows for the determination of the decay time
and, furthermore, the process activation energy. (c) 2005 American
Institute of Physics