Investigation of drain current transient behavior in SLS TFTs with the DLTS technique

In this work, the study of drain current overshoot transients of thin film transistors (TFTs) fabricated by excimer laser sequential lateral solidification (ELA SLS) process is presented. Drain current transient behavior, is ascribed to carrier capture/emission processes within the transistors’ Si body, and represents complex mechanisms differently responding at dark and under illumination conditions. Additionally, the thickness of the Si body film, which is an important parameter for the material structure evaluation, ranged from 30nm to 100nm. The results were stemmed by deep level transient spectroscopy (DLTS) technique and measurements were conducted within the temperature interval of 200K to 400K. The impact of illumination, contributes mainly at lower temperatures through electron-hole generation processes, compensating though carrier freeze-out phenomena

Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors

The present work investigates the switch-on transient decay in polycrystalline thin-film transistors. The decay is found to follow the stretched exponential relaxation model independently of the polycrystalline film properties and the device bias conditions or operating temperature. The temperature dependence of the stretched exponential relaxation allows for the determination of the decay time and, furthermore, the process activation energy. (c) 2005 American Institute of Physics