The present work investigates the switch-on transient decay in
polycrystalline thin-film transistors. The decay is found to follow the
stretched exponential relaxation model independently of the
polycrystalline film properties and the device bias conditions or
operating temperature. The temperature dependence of the stretched
exponential relaxation allows for the determination of the decay time
and, furthermore, the process activation energy. (c) 2005 American
Institute of Physics
