918 research outputs found
Analytic Solution for the Ground State Energy of the Extensive Many-Body Problem
A closed form expression for the ground state energy density of the general
extensive many-body problem is given in terms of the Lanczos tri-diagonal form
of the Hamiltonian. Given the general expressions of the diagonal and
off-diagonal elements of the Hamiltonian Lanczos matrix, and
, asymptotic forms and can be defined in
terms of a new parameter ( is the Lanczos iteration and is
the size of the system). By application of theorems on the zeros of orthogonal
polynomials we find the ground-state energy density in the bulk limit to be
given in general by .Comment: 10 pages REVTex3.0, 3 PS figure
Matterwave Transport Without Transit
Classically it is impossible to have transport without transit, i.e., if the
points one, two and three lie sequentially along a path then an object moving
from one to three must, at some point in time, be located at two. However, for
a quantum particle in a three-well system it is possible to transport the
particle between wells one and three such that the probability of finding it at
any time in the classically accessible state in well two is negligible. We
consider theoretically the analogous scenario for a Bose-Einstein condensate
confined within a three well system. In particular, we predict the adiabatic
transportation of an interacting Bose-Einstein condensate of 2000 Li atoms from
well one to well three without transiting the allowed intermediate region. To
an observer of this macroscopic quantum effect it would appear that, over a
timescale of the order of one second, the condensate had transported, but not
transited, a macroscopic distance of 20 microns between wells one and three.Comment: 6 pages, 4 figure
Loss of Spin Entanglement For Accelerated Electrons in Electric and Magnetic Fields
Using an open quantum system we calculate the time dependence of the
concurrence between two maximally entangled electron spins with one accelerated
uniformly in the presence of a constant magnetic field and the other at rest
and isolated from fields. We find at high Rindler temperature the proper time
for the entanglement to be extinguished is proportional to the inverse of the
acceleration cubed.Comment: 10 pages, 4 figures, appendix and other discussion added, fixed some
typographical errors and some references were correcte
Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond
We present a study of the spin properties of dense layers of near-surface
nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation.
The optically detected magnetic resonance contrast and linewidth, spin
coherence time, and spin relaxation time, are measured as a function of
implantation energy, dose, annealing temperature and surface treatment. To
track the presence of damage and surface-related spin defects, we perform in
situ electron spin resonance spectroscopy through both double electron-electron
resonance and cross-relaxation spectroscopy on the NV centres. We find that,
for the energy (~keV) and dose (~ions/cm)
ranges considered, the NV spin properties are mainly governed by the dose via
residual implantation-induced paramagnetic defects, but that the resulting
magnetic sensitivity is essentially independent of both dose and energy. We
then show that the magnetic sensitivity is significantly improved by
high-temperature annealing at C. Moreover, the spin properties
are not significantly affected by oxygen annealing, apart from the spin
relaxation time, which is dramatically decreased. Finally, the average NV depth
is determined by nuclear magnetic resonance measurements, giving
-17~nm at 4-6 keV implantation energy. This study sheds light on the
optimal conditions to create dense layers of near-surface NV centres for
high-sensitivity sensing and imaging applications.Comment: 12 pages, 7 figure
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
Band bending is a central concept in solid-state physics that arises from
local variations in charge distribution especially near semiconductor
interfaces and surfaces. Its precision measurement is vital in a variety of
contexts from the optimisation of field effect transistors to the engineering
of qubit devices with enhanced stability and coherence. Existing methods are
surface sensitive and are unable to probe band bending at depth from surface or
bulk charges related to crystal defects. Here we propose an in-situ method for
probing band bending in a semiconductor device by imaging an array of
atomic-sized quantum sensing defects to report on the local electric field. We
implement the concept using the nitrogen-vacancy centre in diamond, and map the
electric field at different depths under various surface terminations. We then
fabricate a two-terminal device based on the conductive two-dimensional hole
gas formed at a hydrogen-terminated diamond surface, and observe an unexpected
spatial modulation of the electric field attributed to a complex interplay
between charge injection and photo-ionisation effects. Our method opens the way
to three-dimensional mapping of band bending in diamond and other
semiconductors hosting suitable quantum sensors, combined with simultaneous
imaging of charge transport in complex operating devices.Comment: This is a pre-print of an article published in Nature Electronics.
The final authenticated version is available online at
https://dx.doi.org/10.1038/s41928-018-0130-
Long-range adiabatic quantum state transfer through a linear array of quantum dots
We introduce an adiabatic long-range quantum communication proposal based on
a quantum dot array. By adiabatically varying the external gate voltage applied
on the system, the quantum information encoded in the electron can be
transported from one end dot to another. We numerically solve the Schr\"odinger
equation for a system with a given number of quantum dots. It is shown that
this scheme is a simple and efficient protocol to coherently manipulate the
population transfer under suitable gate pulses. The dependence of the energy
gap and the transfer time on system parameters is analyzed and shown
numerically. We also investigate the adiabatic passage in a more realistic
system in the presence of inevitable fabrication imperfections. This method
provides guidance for future realizations of adiabatic quantum state transfer
in experiments.Comment: 7 pages, 7 figure
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