11 research outputs found

    ์œ ๊ธฐํ™”ํ•ฉ๋ฌผ ์›๋ฃŒ๋ฌผ์งˆ์„ ์ด์šฉํ•œ 6H-SiC ๋™์ข… ๋‹จ๊ฒฐ์ • ๋ฐ•๋ง‰์„ฑ์žฅ์— ๋Œ€ํ•œ ์—ฐ๊ตฌ

    No full text
    ํ•™์œ„๋…ผ๋ฌธ(์„์‚ฌ)--์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› :๋ฌด๊ธฐ์žฌ๋ฃŒ๊ณตํ•™๊ณผ,1999.Maste

    A Neuro-Fuzzy controller Design for Disturbance Rejection in Hot Rolling

    No full text
    Maste

    Ca-Doped CuO Diffusion Barrier for High-Performance a-IGZO Transistors With Cu-Based Source/Drain Material

    No full text
    A thermally stable Ca-doped CuOx (CuCaOx) diffusion barrier to prevent the migration of Cu to amorphous InGaZnO (a-IGZO) was developed by reactive sputtering and subsequent annealing. Insertion of a 5-nm-thick CaCuOx between the Ca-dopedCu (CuCa) and a-IGZO channel films in the source/drain contact regions provided the resulting transistors with superior charge transport and lower trap density compared to the diffusion barrier-free CuCa/a-IGZO transistors. The fabricated a-IGZO transistors with the CuCa/CuCaOx stack contact exhibited a high mobility of 20.8 cm(2)/V.s and an Ion/off ratio of 108. Simultaneously, very stable behavior against the external positive/negate gate bias stress was observed for the a-IGZO thin-film transistors with the CuCa/CuCaOx stack contact. This was attributed to suppression of Cu-related acceptor-like traps due to the conformal formation of CuCaOx film with excellent barrier properties.This work was supported in part by the Industrial Strategic Technology Development Program funded by the Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade under Grant 10048560 and in part by the National Research Foundation of Korea funded by the Korean Government under Grant NRF-2015R1A2A2A01003848

    Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification

    No full text
    The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C.This work was supported in part by Samsung Display and in part by MKE/KEIT through the Industrial Strategic Technology Development Program under Grant 10079974

    Asymmetric formal syntheses of (+)-Carbacyclin and (+)-Brefeldin A via Stereoselective construction of cis-Disubstituted Hydroxycyclopentane

    No full text
    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ)--์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› :์•ฝํ•™๊ณผ ์•ฝํ’ˆ์ œ์กฐํ™”ํ•™์ „๊ณต,1999.Docto

    Characterization of Drosophila synaptotagmin4 gene during embryogenesis

    No full text
    ํ•™์œ„๋…ผ๋ฌธ (์„์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ๊ณผํ•™๊ต์œก๊ณผ(์ƒ๋ฌผ์ „๊ณต), 2012. 2. ์ „์ƒํ•™.์‹ ๊ฒฝ๊ณ„์˜ ๋ฐœ์ƒ์€ ์—ฌ๋Ÿฌ ์œ ์ „์ธ์ž๋“ค์— ์˜ํ•ด ์ •๊ตํ•˜๊ฒŒ ๋‹ค๋“ฌ์–ด์ง€๊ณ  ์กฐ์ ˆ๋˜๋Š” ๊ณผ์ •์„ ๊ฑฐ์นœ๋‹ค. ์ดˆ๊ธฐ์˜ ๋†๋„ ๊ตฌ๋ฐฐ๊ณผ์ •๋ถ€ํ„ฐ ๊ฐ ์œ ์ „์ž๋Š” ์„œ๋กœ๋ฅผ ํ™œ์„ฑํ™”์‹œํ‚ค๊ฑฐ๋‚˜ ์–ต์ œํ•จ์œผ๋กœ์จ ์‹ ๊ฒฝ์„ ๊ตฌ์„ธํฌ์˜ ์šด๋ช…์„ ๊ฒฐ์ •ํ•˜๊ฒŒ ๋˜๋ฉฐ, ์—ฐ์†์ ์ธ ๋†๋„ ๊ตฌ๋ฐฐ๋กœ ์ธํ•ด ์ด ์‹ ๊ฒฝ ์„ ๊ตฌ์„ธํฌ์˜ ์ตœ์ข…์ ์ธ ๋ถ„ํ™”๊นŒ์ง€ ์—ฐ์†์  ๊ณผ์ •์œผ๋กœ ์ผ์–ด๋‚˜๊ฒŒ ๋œ๋‹ค. ์ด๋Ÿฌํ•œ ์‹ ๊ฒฝ๊ณ„์˜ ์ •์ƒ์ ์ธ ๋ฐœ์ƒ๊ณผ์ •์—์„œ ํŠนํžˆ ์‹ ๊ฒฝ๊ณผ ์‹ ๊ฒฝ๊ต์„ธํฌ์˜ ์ƒํ˜ธ์ž‘์šฉ์€ ์‹ ๊ฒฝ์„ธํฌ์˜ ์šด๋ช…์„ ๊ฒฐ์ •ํ•˜๋Š” ์ผ๋ถ€ํ„ฐ ๋ถ„์—ด์ด๋‚˜ ์ด๋™, ๋ถ„ํ™”์— ์ด๋ฅด๊ธฐ๊นŒ์ง€ ๋งŽ์€ ์˜ํ–ฅ์„ ๋ฏธ์น˜๋Š” ๊ฒƒ์œผ๋กœ ์•Œ๋ ค์ ธ ์žˆ๋‹ค. ์‹ ๊ฒฝ๊ต์„ธํฌ๋Š” ์ฒ˜์Œ ์•Œ๋ ค์ง„ ๋ฐ”์™€ ๋‹ฌ๋ฆฌ ์‹ ๊ฒฝ์„ ๋ณด์กฐํ•˜๋Š” ์—ญํ•  ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์‹ ๊ฒฝ์˜ ์ƒ์กด ๋ฐ ๊ธฐ๋Šฅ์— ์ค‘๋Œ€ํ•œ ์—ญํ• ์„ ์ˆ˜ํ–‰ํ•˜๋ฉฐ, ๋ฐœ์ƒ ์ดˆ๊ธฐ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ํ›„๊ธฐ๊นŒ์ง€๋„ ์‹ ๊ฒฝ๊ณผ ์ƒํ˜ธ์ž‘์šฉํ•˜๋Š” ๊ฒƒ์œผ๋กœ ๋ฐํ˜€์กŒ๋‹ค. ์ด ๋‘˜์˜ ์ƒํ˜ธ์ž‘์šฉ์— ์˜ํ–ฅ์„ ๋ฏธ์น  ๊ฒƒ์œผ๋กœ ์˜ˆ์ƒ๋˜๋Š” syt4 ์œ ์ „์ž๊ฐ€ ์ดˆํŒŒ๋ฆฌ์˜ ๋ฐฐ์•„ ์‹œ๊ธฐ ์‹ ๊ฒฝ ๋ฐœ์ƒ์— ์–ด๋–ค ์˜ํ–ฅ์„ ๋ฏธ์น˜๋Š” ์ง€ ์•Œ์•„๋ณด๊ณ ์ž ๋ณธ ์—ฐ๊ตฌ๋ฅผ ์‹คํ–‰ํ•˜์˜€๋‹ค. ์ด ์œ ์ „์ž๋Š” synaptotagmin family์˜ ์ผ์›์œผ๋กœ ๋‘๊ฐœ์˜ C2 domain๊ณผ transmembrane domain์„ ๊ฐ€์ง€๋Š” ๋‹จ๋ฐฑ์งˆ ๊ตฌ์กฐ์ƒ post synapse์—์„œ ๋ถ„๋น„๊ณผ์ •์— ๊ด€์—ฌํ•  ๊ฒƒ์œผ๋กœ ์˜ˆ์ƒ๋˜๋Š” ์œ ์ „์ž์ด๋‹ค. ๋ณธ ์—ฐ๊ตฌ์—์„œ๋Š” ์ด ์œ ์ „์ž๊ฐ€ ๋ฐฐ์•„์‹œ๊ธฐ์— ์–ด๋– ํ•œ ์—ญํ• ์„ ํ•˜๋Š”์ง€ ์•Œ์•„๋ณด๊ณ ์ž ํ•˜์˜€๋‹ค. ์ด ์œ ์ „์ž๋Š” ์‹ ๊ฒฝ์—์„œ ๋ฐœํ˜„ํ•˜์ง€๋งŒ Syt4๋‹จ๋ฐฑ์งˆ์˜ ๊ฒฝ์šฐ์—” ์‹ ๊ฒฝ์„ธํฌ ๋ณด๋‹ค๋Š” ์‹ ๊ฒฝ๊ต์„ธํฌ๋‚˜ ๊ทผ์œก์— ๋” ์ธ์ ‘ํ•˜์—ฌ ์ž‘์šฉํ•œ๋‹ค๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค. ๋˜ํ•œ ์ด ์œ ์ „์ž๊ฐ€ ์†์‹ค๋˜๋Š” ๋Œ์—ฐ๋ณ€์ด์˜ ๊ฒฝ์šฐ ์‹ ๊ฒฝ์„ธํฌ์˜ ์ถ•์ƒ‰๋Œ๊ธฐ๊ฐ€ ๋งˆ์ง€๋ง‰ ๋ชฉ์ ์ง€๊นŒ์ง€ ๋„๋‹ฌํ•˜์ง€ ๋ชปํ•˜๋Š” ๊ฒฐ๊ณผ๋ฅผ ๊ด€์ฐฐํ•  ์ˆ˜ ์žˆ์—ˆ์œผ๋ฉฐ, ๊ณผ๋Ÿ‰๋ฐœํ˜„๋œ ๋Œ์—ฐ๋ณ€์ด์—์„œ๋Š” ๊ณผํ•˜๊ฒŒ ์ž๋ผ๋‚˜ ๊ฐ€์ง€๋ฅผ ๋ป—์–ด๋‚˜๊ฐ€๋Š” ๋ชจ์Šต์„ ๊ด€์ฐฐํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ์ด๋Ÿฌํ•œ ๊ฒฐ๊ณผ๋กœ syt4์œ ์ „์ž๋Š” ์ดˆํŒŒ๋ฆฌ ๋ฐฐ์•„ ์‹ ๊ฒฝ๊ณ„ ํ›„๊ธฐ ๋ฐœ์ƒ์˜ ์‹ ๊ฒฝ์ด ๋งˆ์ง€๋ง‰ ๋ชฉ์ ์ง€๋กœ ๋„๋‹ฌํ•˜๋Š”๋ฐ ์˜ํ–ฅ์„ ์ฃผ๋Š” ๊ฒƒ์œผ๋กœ ์ƒ๊ฐ๋œ๋‹ค.Complex networks between the presynaptic and postsynaptic cells determine synapses. A variety of molecules are required from the presynaptic and postsynaptic cells for proper synapses. synaptotagmin4(syt4) has been known as a calcium sensor and axonal growth during postembryogenesis. Syt4 is one of synaptotagmin family that has two C2 domains and one transmembrane domain. In this study, we investigated the roles of Syt4 during the process of embryonic axonal growth. We found that syt4 loss-of-function mutation caused the abnormal fasciculation in the ventral nerve cord and ISN axons didnt reach the target muscles. The ectopic expression of syt4 in the presynaptic cells overgrew beyond the target muscle and extra branches of ISN. These results indicate that syt4 function in the axonal targeting during embryogenesis.Maste

    ๊ณ ์˜จ ๊ณ ์•• ์กฐ๊ฑด์—์„œ Dimethyl-Ether์˜ ๋ถ„๋ฌด ํŠน์„ฑ์— ๊ด€ํ•œ ์—ฐ๊ตฌ

    No full text
    ํ•™์œ„๋…ผ๋ฌธ(์„์‚ฌ)--์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› :๊ธฐ๊ณ„ํ•ญ๊ณต๊ณตํ•™๋ถ€,2003.Maste

    Homoepitaxial growth and in-situ doping of monocrystalline alpha-SiC thin films by MOCVD for power device applications

    No full text
    Thesis (doctoral)--์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› :์žฌ๋ฃŒ๊ณตํ•™๋ถ€,2002.Docto
    corecore