2 research outputs found
Study of Parameters of Neutron-Irradiated Single Crystal Silicon
Get PDF在不同温度和红外光照下，测量了经中子辐照的单晶硅表面光电压，确定了其深能级的位置和少子扩散长度；由双能级复合理论，推导了中子辐照单晶硅的深能级复合中心和寿命的计算公式；计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。The photovoltage spectra of neutron-irradiated single crystal silicon under inFra-red illumination and at low temperatures are measured.The deep level and minority carrier diFFusion length are determined.By the double-level recombination model,the statistics Formulas of the deep level and liFetime are derived For neutron-irradiated single crystal silicon.Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.国家自然科学基
