- Publication venue
- 'Science China Press., Co. Ltd.'
- Publication date
- Field of study
No full text
- Publication venue
- 'Science China Press., Co. Ltd.'
- Publication date
- Field of study
No full text
- Publication venue
- 'Science China Press., Co. Ltd.'
- Publication date
- Field of study
No full text
- Publication venue
- 'Science China Press., Co. Ltd.'
- Publication date
- Field of study
No full text
- Publication venue
- Publication date
- 01/01/1998
- Field of study
No full text用等离子体增强化学汽相淀积法系统制备了发光纳米硅(nc-Si:H)薄膜。讨论了晶粒尺寸和表面结构对光致发光(PL)谱的影响。用量子限制-发光中心模型解释了nc-Si:H的PL。研究了PL谱的温度特性。温度从10K上升到250K,PL峰值红移了54meV,且PL强度衰减了两个数量级
- Publication venue
- Publication date
- 01/01/1998
- Field of study
No full text利用常规等离了体化学气相沉积(PECVD)工艺制备了nc-Si:H膜,并对其光致发光(PL)特性从10~250K温度范围内进行了变温测量。实验结果指出,随着测试温度升高,PL峰值能量发生了54meV的红移,PL强度在T>80K后呈指数下降趋势。PL峰值能量的红移起因于带隙的收缩,而PL强度的减弱则是由于非辐射复合起了主导作用
- Publication venue
- 'The Korea Academy of International Business Education'
- Publication date
- Field of study
No full text