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测试温度对nc-Si:H膜光致发光特性的影响
Authors
何宇亮
刘明
+4 more
彭英才
李国华
江兴流
韩和相
Publication date
1 January 1998
Publisher
Abstract
利用常规等离了体化学气相沉积(PECVD)工艺制备了nc-Si:H膜,并对其光致发光(PL)特性从10~250K温度范围内进行了变温测量。实验结果指出,随着测试温度升高,PL峰值能量发生了54meV的红移,PL强度在T>80K后呈指数下降趋势。PL峰值能量的红移起因于带隙的收缩,而PL强度的减弱则是由于非辐射复合起了主导作用
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Last time updated on 15/03/2019