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纳米硅薄膜的光致发光特性
Authors
何宇亮
刘明
+3 more
李国华
江兴流
韩和相
Publication date
1 January 1998
Publisher
Abstract
用等离子体增强化学汽相淀积法系统制备了发光纳米硅(nc-Si:H)薄膜。讨论了晶粒尺寸和表面结构对光致发光(PL)谱的影响。用量子限制-发光中心模型解释了nc-Si:H的PL。研究了PL谱的温度特性。温度从10K上升到250K,PL峰值红移了54meV,且PL强度衰减了两个数量级
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oai:ir.semi.ac.cn:172111/19107
Last time updated on 15/03/2019