Investigation of the High EFFiciency Luminescence of RE(Er)and Oxygen (O) Double Implanted GaAs and Si

用光致发光谱（Pl）、傅里叶变换红外吸收话（fTIr）和X射线衍射谱（Xrd）等研究了稀土（Er）和氧（O）双离子注入gAAS和SI的发光特性和高效发光机理。Pl测量结果发现：（Er和O）双注入样品对比Er单注入样品的发光（Pl）强度（Er的1.54μM峰）显著增大，发光单色性等也有明显改善。测量并分析了该材料的fTIr和Xrd谱；对该材料的高效发光机制作了较深入地探讨和澄清。The RE(Er) and oxygen(O) double ion-implanted GaAs and Si are studied by using PL.FTIR and XRD.The PL measurement results show that the luminescent intensity (Er 1.54 μm peak) of (Er, O) double implanted samples is much stronger than that of single Er-implanted samples and the monochromaticity of luminescence is improved.The FTIR and XRD of the materials are measured and analyzed.The mechanism of the high eFFicienct luminescence of the materiaIs is investigated deeply.国家自然科学基金;南京大学团体微结构实验室资

Study on the Luminescent Properties and Structure of Yb-Implanted InP (Yb)

用离子注入法配合优化退火新技术制成了一种高效发光材料InP（yb）；用高灵敏度激光光谱仪测量了该材料的发光特性（Pl），并研究了离子注入和退火过程中发光特性的变化，对Pl谱峰作出辨认；用X射线衍射谱（XdS）测量分析晶格结构和注入损伤（缺陷）；研究了原材料的掺杂（Sn）对发光特性的影响；较深入地探讨了该材料的发光机制，并用一改进rE发光中心模型阐明该材料的激发发光过程。A new eFFicient luminescent material of rare earth Yb doped InP(Yb)was prepared by ion implanted method accompanied by a new optimal annealingthchnigue.The Photoluminescent (PL) properties of the material and the peak.changes of PL spectra of InP (Yb) crystals during RE (Yb) implantation and annealing processes have been studied by high discriminative laser spectrome ter.The structure and implanted damage(deFects)of these crystals have been analyzed systematically by X-ray diFFractional spectra (XDS) and PL.The luminescent mechanism of the material has been investigated deeply.And these results have been interpreted by a improved model of rare earth luminescent center

稀土（Er）和氧（O）双掺杂GaAs和Si的高效发光的研究

用光致发光谱(PL)、傅里叶变换红外吸收谱(FTIR)和X射线衍射谱(XRD)等研究了稀土(Er)和氧(O)双离子注入GaAs和Si的发光特性和高效发光机理。测量并分析了该材料的FTIR和XRD谱;对该材料的高效发光机制作了较深入地探讨和澄清

STUDY of RARE EARTH (Er) AND OXYGEN (O)CO DOPED GaAs (Er,O)BY INFRARED ABSORPTION SPECTRA

用傅里叶变换红外吸收谱和透射谱（fTIr），在77k和300k温度下测量研究用双离子注入法配合优化热退火处理制成的gAASEr，O发光材料的光吸收特性及杂质缺陷行为，观测到该材料中存在3种吸收峰并作了指认，分析了这些吸收峰与材料的离子注入及退火的关系，给出杂质和缺陷对材料gAAS（Er，O）高效发光的可能影响The rare earth (Er) and oxygen (O) co doped GaAs(Er,O) was prepared by double ion implantation associated with optimized thermal annealing,and their absorption properties and behavior of impurities and deFects were measured and studied by Fourier transForm inFrared absorption spectra (FTIR) at 77￣300K.Some useFul results and inFormation were obtained.Three absorption peaks were observed and identiFied For the First time.The relationship between these absorption peaks and implantation and annealing was discussed.The inFluence of impurities and deFects on the eFFicient luminescence of GaAs(Er,O) was analyzed.中国科学院红外物理国家实验室部分资

FORMATION AND OPTICAL EXCITATION MECHANISM of Er LUMINESCENCE CENTERS IN RARE EARTH Er-LMPLANTED InP

用离子注人法对InP晶体实现高浓度稀土（rE）Er的掺杂，探索了优质材料的制作规律和条件。在低温（10~200k）测量了光致发光谱（Pl），观测到Er的尖锐发光峰，其峰值波长1.538μM，其发光强度较大；研究了该材料的热退火行为，Er发光中心的形成和光激活过程；用ruTHErfOrd背散射谱（rbS）测量给出了热退火前后注Er-InP晶体中Er离子浓度的数值及深度分布；并对Er发光中心的组成和光激发机制作了分析讨论。The rare earth doped Ⅲ - Ⅴ compound luminescence material InP: Er was prepared by ion implantation method.The photoluminescence spectra(PL) of the samples were measured at low temperature (10-200K ).The sharp luminescence peak (wavelength 1.538μm) of Er centers has been observed.The Er concentration profiles were measured by RutherFord back-scattering spectrometry (RBS) in Er-implanted Inp crystals.The Formation and optical excitation mechanism of Er luminescence centers in the samples were analysed.国家自然科学基金;北京大学稀土材料化学及应用国家重点实验室资

SECONDARY ION MASS SPECTROMETRY of ERBIUM AND OXYGEN CO IMPLANTED IN GaAs

在Ⅲ-V族半导体gAAS外延层上共注入Er和O离子（gAAS：Er，O）.经面对面优化退火后，光致发光（PHOTOluMInESCEnCE-Pl）谱中观测到对应Er3＋第一激发态到基态4I13/2-4I15/2跃迁，其相对强度较单注入Er的gAAS（gAAS：Er）增强10倍，且谱线变窄.从二次离子质谱（SECOndAryIOnMASSPECTrOMETry-SIMS）和卢瑟福背散射实验给出退火前后Er在gAAS：Er样品中的剖面分布.SIMS测量分别给出O注入前后Er和O在gAAS：Er，O中的深度剖面分布，分析表明Er和O共注入后形成光学激活有效的发光中心.Er and O ions were co implanted in Ⅲ Ⅴ compound semiconductor GaAs (GaAs:Er,O).AFter Face to Face annealing the sharp photoluminescence (PL) spectra were observed at 1.538μm, which correspond to the transition From the First excited state 4I 13/2 to the ground state 4I 15/2 of Er 3+ .The intensity of PL was enhanced about ten times in comparison with the only Er implanted GaAs sample: GaAs:Er. Depth profiles of Er implanted concentration were obtained and analyzed by Secondary Ion Mass Spectrometry(SIMS) and RutherFord Back Scattering(RBS) measurements as implanted and annealed.Depth profiles of Er and O co implanted were analyzed and studied by SIMS.The results indicate that a kind of optically active eFFicient luminescence center is Formed in GaAs:Er,O.国家自然科学基金;北京大学稀土材料化学应用国家重点实验室基

Tunneling EFFects in the Current-voltage Characteristics of GaAs Heteroface Solar Cell

在200~300k温度内测量了由lPE生长的异质面高效gAAlS太阳电池暗电流-电压特性的温度关系，对实测的I-V特性进行拟合分析，认为低温低偏压下的过剩电流，起因于耗尽层内禁带中局域态间热协助的多级带间隧穿效应.Dark Forward current-voltage characteristics as a Function of temperature between 200 K and 300 K For GaAs heteroface solar cell produced by LPE process were measured.Theoretical Fitting-analysis on the measured values were made.The observed excess current at lower temperature and in lower Forward bias regions may arise From interband tunneling eFFects assisted by the thermal,activation within local deFect states in depletion layer

Characterization of Generation LiFetime in the n-Region For Heteroface GaAs Solar Cell

使用简单的微分电流和微分电容技术，从反向偏置的I-V和C-V数据计算异质面PPngAAS太阳电池n层少子产生寿命剖面图。讨论它对电池性能的影响。The generation liFetime profile in the n-region of a ppn GaAs heterofacesolar cell had been determined by using a simple diFFerential current and capacitance tech-nique From the reverse-biased I-V and C-V data.The eFFect of generation liFetime on cell per- Formance waiq discussed