Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon

The article presents the results of capacitance measurements on MOS structures with a silicon substrate that was doped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energy distribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slight increase in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si

Application of Ru-based gate materials for CMOS technology

\u3cp\u3eTogether with high-κ dielectric films, metal gate electrodes have to be employed in advanced CMOS technologies. The metal gate material should be carefully selected with respect to work function, stability of metal-dielectric stack and compatibility with the CMOS process. In our investigation, Ru, RuO\u3csub\u3e2\u3c/sub\u3e and SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrodes grown on thermal SiO \u3csub\u3e2\u3c/sub\u3e, atomic-layer deposition Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films have been analyzed by means of high- and low-frequency capacitance-voltage measurement as well as current-voltage characteristics on MOS capacitors. Ru-based gate materials were prepared by metal-organic chemical vapor deposition at temperatures between 300 and 500°C. Work function of the investigated gate material, leakage current, density of effective defect charge as well as density of interface traps of the gate oxide film were extracted from the measurements. These properties are discussed with regard to application of Ru-based metal gates in CMOS technology.\u3c/p\u3

Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3

Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3