Graphene-WS2_2 heterostructures for tunable spin injection and spin transport

We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle spin-precession measurements, respectively. First, during the spin-injection into graphene through a WS$_2$-graphene interface, we can tune the interface resistance at different current bias and modify the spin injection efficiency, in a correlation with the conductivity-mismatch theory. Temperature assisted tunneling is identified as a dominant mechanism for the charge transport across the interface. Second, we measure the spin transport in graphene, underneath the WS$_2$ crystal and observe a significant reduction in the {\tau}s down to 17 ps in graphene in the WS$_2$ covered region, compared to that in its pristine state. The reduced {\tau}s indicates the WS$_2$-proximity induced additional dephasing of the spins in graphene.Comment: 7 Pages, 6 figure

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.Comment: Review, Author submitted manuscript - draft; 25 pages, 8 figure

Spin current induced magnetization oscillations in a paramagnetic disc

When electron spins are injected uniformly into a paramagnetic disc, they can precess along the demagnetizing field induced by the resulting magnetic moment. Normally this precession damps out by virtue of the spin relaxation which is present in paramagnetic materials. We propose a new mechanism to excite a steady-state form of this dynamics by injecting a constant spin current into this paramagnetic disc. We show that the rotating magnetic field generated by the eddy currents provide a torque which makes this possible. Unlike the ferromagnetic equivalent, the spin-torque-oscillator, the oscillation frequency is fixed and determined by the dimensions and intrinsic parameters of the paramagnet. The system possesses an intrinsic threshold for spin injection which needs to be overcome before steady-state precession is possible. The additional application of a magnetic field lowers this threshold. We discuss the feasibility of this effect in modern materials. Transient analysis using pump-probe techniques should give insight in the physical processes which accompany this effect

Spin transport in high-mobility graphene on WS2 substrate with electric-field tunable proximity spin-orbit interaction

Graphene supported on a transition metal dichalcogenide substrate offers a novel platform to study the spin transport in graphene in presence of a substrate induced spin-orbit coupling, while preserving its intrinsic charge transport properties. We report the first non-local spin transport measurements in graphene completely supported on a 3.5 nm thick tungsten disulfide (WS$_2$) substrate, and encapsulated from the top with a 8 nm thick hexagonal boron nitride layer. For graphene, having mobility up to 16,000 cm$^2$V$^{-1}$s$^{-1}$, we measure almost constant spin-signals both in electron and hole-doped regimes, independent of the conducting state of the underlying WS$_2$ substrate, which rules out the role of spin-absorption by WS$_2$. The spin-relaxation time $\tau_{\text{s}}$ for the electrons in graphene-on-WS$_2$ is drastically reduced down to~10 ps than $\tau_{\text{s}}$ ~ 800 ps in graphene-on-SiO$_2$ on the same chip. The strong suppression of $\tau_{\text{s}}$ along with a detectable weak anti-localization signature in the quantum magneto-resistance measurements is a clear effect of the WS$_2$ induced spin-orbit coupling (SOC) in graphene. Via the top-gate voltage application in the encapsulated region, we modulate the electric field by 1 V/nm, changing $\tau_{\text{s}}$ almost by a factor of four which suggests the electric-field control of the in-plane Rashba SOC. Further, via carrier-density dependence of $\tau_{\text{s}}$ we also identify the fingerprints of the D'yakonov-Perel' type mechanism in the hole-doped regime at the graphene-WS$_2$ interface.Comment: 11 pages, 7 figure

Spin-Dependent Electron Transmission Model for Chiral Molecules in Mesoscopic Devices

Various device-based experiments have indicated that electron transfer in certain chiral molecules may be spin-dependent, a phenomenon known as the Chiral Induced Spin Selectivity (CISS) effect. However, due to the complexity of these devices and a lack of theoretical understanding, it is not always clear to what extent the chiral character of the molecules actually contributes to the magnetic-field-dependent signals in these experiments. To address this issue, we report here an electron transmission model that evaluates the role of the CISS effect in two-terminal and multi-terminal linear-regime electron transport experiments. Our model reveals that for the CISS effect, the chirality-dependent spin transmission is accompanied by a spin-flip electron reflection process. Furthermore, we show that more than two terminals are required in order to probe the CISS effect in the linear regime. In addition, we propose two types of multi-terminal nonlocal transport measurements that can distinguish the CISS effect from other magnetic-field-dependent signals. Our model provides an effective tool to review and design CISS-related transport experiments, and to enlighten the mechanism of the CISS effect itself

Linear-response magnetoresistance effects in chiral systems

The chirality-induced spin selectivity (CISS) effect enables the detection of chirality as electrical charge signals. It is often studied using a two-terminal circuit geometry where a ferromagnet is connected to a chiral component, and a change of electrical resistance is reported upon magnetization reversal. This is however not expected in the linear response regime because of compensating reciprocal processes, limiting the interpretation of experimental results. Here we show that magnetoresistance effects can indeed appear even in the linear response regime, either by changing the magnitude or the direction of the magnetization or an applied magnetic field. We illustrate this in a spin-valve device and in a chiral thin film as the CISS-induced Hanle magnetoresistance (CHMR) effect. This effect helps to distinguish spin-transport-related effects from other effects, and can thereby provide further insight into the origin of CISS

Circuit-Model Analysis for Spintronic Devices with Chiral Molecules as Spin Injectors

Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work studied hybrid spintronic devices with conventional electronic materials and chiral (bio)molecules. However, a theoretical foundation for the CISS effect is still in development and the spintronic signals were not evaluated quantitatively. We present a circuit-model approach that can provide quantitative evaluations. Our analysis assumes the scheme of a recent experiment that used photosystem~I (PSI) as spin injectors, for which we find that the experimentally observed signals are, under any reasonable assumptions on relevant PSI time scales, too high to be fully due to the CISS effect. We also show that the CISS effect can in principle be detected using the same type of solid-state device, and by replacing silver with graphene, the signals due to spin generation can be enlarged four orders of magnitude. Our approach thus provides a generic framework for analyzing this type of experiments and advancing the understanding of the CISS effect

Platinum thickness dependence of the inverse spin-Hall voltage from spin pumping in a hybrid YIG/Pt system

We show the first experimental observation of the platinum (Pt) thickness dependence in a hybrid YIG/Pt system of the inverse spin-Hall effect from spin pumping, over a large frequency range and for different rf powers. From the measurement of the dc voltage ($\Delta\textrm{V}$) at the resonant condition and the resistance ($R$) of the Pt layer, a strong enhancement of the ratio $\Delta\textrm{V}/R$ has been observed, which is not in agreement with previous studies on the NiFe/Pt system. The origin of this behaviour is still unclear and cannot be explained by the spin transport model that we have used.Comment: 4 pages, 3 figure