Multiple scattering of classical waves: from microscopy to mesoscopy and diffusion

A tutorial discussion of the propagation of waves in random media is presented. In first approximation the transport of the multiple scattered waves is given by diffusion theory, but important corrections are present. These corrections are calculated with the radiative transfer or Schwarzschild-Milne equation, which describes intensity transport at the ``mesoscopic'' level and is derived from the ``microscopic'' wave equation. A precise treatment of the diffuse intensity is derived which automatically includes the effects of boundary layers. Effects such as the enhanced backscatter cone and imaging of objects in opaque media are also discussed within this framework. In the second part the approach is extended to mesoscopic correlations between multiple scattered intensities which arise when scattering is strong. These correlations arise from the underlying wave character. The derivation of correlation functions and intensity distribution functions is given and experimental data are discussed. Although the focus is on light scattering, the theory is also applicable to micro waves, sound waves and non-interacting electrons.Comment: Review. 86 pages Latex, 32 eps-figures included. To appear in Rev. Mod. Phy

Werkers van de wereld: Globalisering, maritieme arbeidsmarkten en de verhouding tussen Aziaten en Europeanen in dienst van de VOC

Davids, C.A. [Promotor]Lucassen, J.M.W.G. [Promotor

Optimal learning rules for discrete synapses

There is evidence that biological synapses have a limited number of discrete weight states. Memory storage with such synapses behaves quite differently from synapses with unbounded, continuous weights, as old memories are automatically overwritten by new memories. Consequently, there has been substantial discussion about how this affects learning and storage capacity. In this paper, we calculate the storage capacity of discrete, bounded synapses in terms of Shannon information. We use this to optimize the learning rules and investigate how the maximum information capacity depends on the number of synapses, the number of synaptic states, and the coding sparseness. Below a certain critical number of synapses per neuron (comparable to numbers found in biology), we find that storage is similar to unbounded, continuous synapses. Hence, discrete synapses do not necessarily have lower storage capacity

Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers

We have compared the mixing rate of several 5d-4d metal bilayers which form ideal solutions. We observe a strong correlation between the mixing rate and the average cohesive energy of each bilayer. A model based on the thermal spike concept is proposed to explain this behavior. The model leads to a general expression describing mixing rates in metallic bilayers

Influence of chemical driving forces in ion mixing of metallic bilayers

The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correlated with the heat of mixing of corresponding binary alloys. The results are interpreted according to Darken's theory of chemically enhanced diffusion

A Novel Spike Distance

The discrimination between two spike trains is a fundamental problem for both experimentalists and the nervous system itself. We introduce a measure for the distance between two spike trains. The distance has a time constant as a parameter. Depending on this parameter, the distance interpolates between a coincidence detector and a rate difference counter. The dependence of the distance on noise is studied with an integrate-and-fire model. For an intermediate range of the time constants, the distance depends linearly on the noise. This property can be used to determine the intrinsic noise of a neuron

Mesoscopic phenomena in multiple light scattering

In my thesis I study mesoscopic corrections on diffuse transport. I first describe the diffuse transport of light, using the scalar approximation and the radiative transfer approach. Next, I focus on the correlations in transmission, I discuss the so called C_1, C_2, C_3 decomposition and calculate each term in detail. Finally, I discuss the full distribution functions in the transmission. Many references and figures are included. Note, however, that much of the work was already published or is present on the cond-mat archive. A limited number is available as hardcopy on request ([email protected]) else 132 pages Postscript.Comment: Ph.D. thesis. 132 pages postscript; hardcopy available on reques

Influence Of Ch4/h2 Reactive Ion Etching On The Deep Levels Of Si-doped Alxga1-xas (x=0.25)

We study the passivation and recovery of shallow and deep levels in Si-doped AlGaAs exposed to CH4/H2 and H2 reactive ion etching (RIE). The carrier concentration depth profile is determined by capacitance-voltage measurements. The activation energy to recover the silicon donors is found to be 1.1 eV for samples exposed to CH4/H2 RIE and 1.3 eV for samples exposed to H2 RIE. We study the behavior of DX centers in Si-doped AlGaAs layers after RIE exposure and subsequent thermal annealing by using deep level transient spectroscopy. For CH4TH2 RIE a new emission is detected at the high temperature side. We identify this emission as the DX3 center, which is assigned to a DX center with three aluminum atoms surrounding the Si donor. This DX center is only detected on the samples exposed to CH4/H2 RIE. We explain the formation of this deep level to the highly selective removal of Ga atoms in favor of Al atoms. Consequently Al-rich regions are created near the surface. © 1996 American Vacuum Society.14317731779Chevallier, J., Clerjaud, B., Pajot, B., (1991) Semiconductors and Semimetals, 34, p. 449. , Chap. 13Dautremont-Smith, W.C., (1988) Mater. Res. Soc. Symp. Proc., 104, p. 313Pearton, S.J., Dautremont-Smith, W.C., Chevallier, J., Tu, C.W., Cummings, K.D., (1986) J. Appl. Phys., 59, p. 2821Jalil, A., Chevallier, J., Pesant, J.C., Mostefaoui, R., Pajot, B., Murawala, P., Azoulay, R., (1987) Appl. Phys. Lett., 50, p. 439Chevallier, J., Pajot, B., Jalil, A., Mostefaoui, R., Rahbi, R., Boissy, M.C., (1988) Mater. Res. Soc. Symp. Proc., 104, p. 337Pavesi, L., Giannozzi, P., Reinhart, F.K., (1990) Phys. Rev. B, 42, p. 1864Pavesi, L., Giannozzi, P., (1991) Phys. Rev. B, 43, p. 2446Tavendale, A.J., Pearton, S.J., Williams, A.A., Alexiev, D., (1990) Appl. Phys. Lett., 56, p. 1457Yuan, M.H., Wang, L.P., Jin, S.X., Chen, J.J., Qin, G.G., (1991) Appl. Phys. Lett., 58, p. 925Srivastava, P.C., Chandra, S., Singh, U.P., (1991) Semicond. Sci. Technol., 6, p. 1126Cho, H.Y., Kim, E.K., Min, S., Chang, K.J., Lee, C., (1990) J. Appl. Phys., 68, p. 5077Zundel, T., Weber, J., (1989) Phys. Rev. B, 39, p. 13549Roos, G., Johnson, N.M., Herring, C., Harris, J.S., (1991) Appl. Phys. Lett., 56, p. 461Pearton, S.J., Abernathy, C.R., Lopata, J., (1991) Appl. Phys. Lett., 59, p. 3571Morrow, R.A., (1989) J. Appl. Phys., 66, p. 2973Cameron, N.I., Beaumont, S.P., Wilkinson, C.D.W., Johnson, N.P., Kean, A.H., Stanley, C.R., (1990) J. Vac. Sci. Technol. B, 8, p. 1966Cameron, N.I., Beaumont, S.P., Wilkinson, C.D.W., Johnson, N.P., Kean, A.H., Stanley, C.R., (1990) Microelectron. Eng., 11, p. 607Cheung, R., Thorns, S., McIntyre, I., Wilkinson, C.D.W., Beaumont, S.P., (1988) J. Vac. Sci. Technol. B, 6, p. 1911Jackson, G.S., Beberman, J., Feng, M.S., Hsieh, K.C., Holonyak Jr., N., Verdeyen, J., (1988) J. Appl. Phys., 64, p. 5175Dautremont-Smith, W.C., Nabity, J.C., Swaminathan, V., Stavola, M., Chevallier, J., Tu, C.W., Pearton, S.J., (1986) Appl. Phys. Lett., 49, p. 1098Jalil, A., Heurtel, A., Marfaing, Y., Chevallier, J., (1989) J. Appl. Phys., 66, p. 5854Nabity, J.C., Stavola, M., Lopata, J., Dautremont-Smith, W.C., Tu, C.W., Pearton, S.J., (1987) Appl. Phys. Lett., 50, p. 921Morrow, R.A., (1991) J. Appl. Phys., 69, p. 4306Chadi, D.J., Chang, K.J., (1988) Phys. Rev. Lett., 61, p. 873Chadi, D.J., Chang, K.J., (1988) Phys. Rev. B, 39, p. 10063Mooney, P.M., (1990) J. Appl. Phys., 67, pp. R1Chang, K.J., (1990) Proc. 20th Conference on Physics Semiconductor, 1, p. 787. , edited by E. M. Anastassakis and J. D. JoannopoulosCollot, P., Gaonach, C., (1990) Semicond. Sci. Technol., 5, p. 237Constantine, C., Johnson, D., Pearton, S.J., Chakrabarti, U.K., Emerson, A.B., Hobson, W.S., Kinsella, A.P., (1990) J. Vac. Sci. Technol. B, 8, p. 596Pearton, S.J., Chakrabarti, U.K., Hobson, W.S., (1989) J. Appl. Phys., 66, p. 2061Pearton, S.J., Abernathy, C.R., (1989) Appl. Phys. Lett., 55, p. 678Pearton, S.J., Hobson, W.S., Jones, K.S., (1989) J. Appl. Phys., 66, p. 5009Pereira, R., Van Hove, M., De Potter, M., Van Rossum, M., (1990) Electron. Lett., 26, p. 462Pereira, R., Van Hove, M., De Raedt, W., Jansen, Ph., Borghs, G., Jonckheere, R., Van Rossum, M., (1991) J. Vac. Sci. Technol. B, 9, p. 1978Chevallier, J., Dautremont-Smith, W.C., Tu, C.W., Pearton, S.J., (1985) Appl. Phys. Lett., 47, p. 108Hansen, W.L., Haler, E.E., Luke, P.N., (1982) IEEE Trans. Nucl. Sci., NS-29, p. 738Hall, R.N., (1984) IEEE Trans. Nucl. Sci., NS-31, p. 320Mooney, P.M., Theis, T.N., Wright, S.L., (1988) Appl. Phys. Lett., 53, p. 2546Mooney, P.M., Theis, T.N., Calleja, E., (1991) J. Electron. Mater., 20, p. 23Baba, T., Mizuta, M., Fujizawa, T., Yoshino, J., Kukimoto, H., (1989) Jpn. J. Appl. Phys., 28, pp. L891Morgan, T.N., (1991) J. Electron. Mater., 20, p. 6