Cryogenic scanning force microscopy of quantum Hall samples: Adiabatic transport originating in anisotropic depletion at contact interfaces

Anisotropic magneto resistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport features with a cryogenic scanning force microscope (SFM) by measuring the local potential distribution within the two-dimensional electron system (2DES). These local measurements reveal the presence of an incompressible strip in front of contacts with insulating properties depending on the orientation of the contact/2DES interface line relatively to the crystal axes of the heterostructure. Such an observation gives another microscopic meaning to the term 'non-ideal contact' used in context with the Landauer-B\"uttiker formalism applied to the quantum Hall effect.Comment: 5 pages, 4 figure

Density of States of GaAs-AlGaAs Heterostructures Deduced from Temperature Dependend Magnetocapacitance Measurements

Abstract We have analyzed the density of states of a two dimensional electron gas in a GaAs- AlGaAs hetereostructure by measuring the magnetocapacitance in magnetic fields up to 6 Tesla at temperatures below 10 K. The experimental data are well described by a Gaussian-like density of states where the linewidth à is proportional to B

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.Comment: 3 color figures; publishe

Correlated electron tunneling through two separate quantum dot systems with strong capacitive interdot coupling

A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can be overcome by correlated tunneling when tunnel coupling to the leads increases. The experimental results are compared with numerical renormalization group calculations using predefined (measured) parameters. Our results indicate Kondo correlations due to the electrostatic interaction in this double quantum dot system.Comment: 5 pages, 3 figures, published in Phys. Rev. Lett. Oct. 30t

Compressibility in the Integer Quantum Hall Effect within Hartree-Fock Approximation

Electron-electron interactions seem to play a surprisingly small role in the description of the integer quantum Hall effect, considering that for just slightly different filling factors the interactions are of utmost importance causing the interaction-mediated fractional quantum Hall effect. However, recent imaging experiments by Cobden et al. and Ilani et al. constitute strong evidence for the importance of electron-electron interactions even in the integer effect. The experiments report on measurements of the conductance and electronic compressibility of mesoscopic MOSFET devices that show disagreement with predictions from the single particle model. By diagonalising a random distribution of Gaussian scatterers and treating the interactions in Hartree-Fock approximation we investigate the role of electron-electron interactions for the integer quantum Hall effect and find good agreement with the experimental results.Comment: 4 pages, 4 figures, Proceedings of "Transport in Interacting and Disordered Systems (TIDS11)", submitted for publication in phys. stat. sol. (c), including pss style file

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping

In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about influences on the initial doping of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing and compensation doping using NH3. Hysteretic behavior is observed in the electric field effect due to dipolar adsorbates like water and NH3. Finally we demonstrate spatially selective doping of graphene using patterned PMMA. 4-terminal transport measurements of the p-n devices reveal edge channel mixing in the quantum hall regime. Quantized resistances of h/e^2, h/3e^2 and h/15e^2 can be observed as expected from theory.Comment: 18 pages, 5 figure

An ultra-bright atom laser

We present a novel, ultra-bright atom-laser and ultra-cold thermal atom beam. Using rf-radiation we strongly couple the magnetic hyperfine levels of 87Rb atoms in a magnetically trapped Bose-Einstein condensate. At low rf-frequencies gravity opens a small hole in the trapping potenital and a well collimated, extremely bright atom laser emerges from just below the condensate. As opposed to traditional atom lasers based on weak coupling, this technique allows us to outcouple atoms at an arbitrarily large rate. We demonstrate an increase in flux per atom in the BEC by a factor of sixteen compared to the brightest quasi-continuous atom laser. Furthermore, we produce by two orders of magnitude the coldest thermal atom beam to date (200 nK).Comment: 20 pages, 9 figures, supplementary material online at http://www.bec.g

Electrical Transport in High Quality Graphene pnp Junctions

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.Comment: to appear in a special focus issue in New Journal of Physic