Low-Prandtl-number B\'enard-Marangoni convection in a vertical magnetic field

The effect of a homogeneous magnetic field on surface-tension-driven B\'{e}nard convection is studied by means of direct numerical simulations. The flow is computed in a rectangular domain with periodic horizontal boundary conditions and the free-slip condition on the bottom wall using a pseudospectral Fourier-Chebyshev discretization. Deformations of the free surface are neglected. Two- and three-dimensional flows are computed for either vanishing or small Prandtl number, which are typical of liquid metals. The main focus of the paper is on a qualitative comparison of the flow states with the non-magnetic case, and on the effects associated with the possible near-cancellation of the nonlinear and pressure terms in the momentum equations for two-dimensional rolls. In the three-dimensional case, the transition from a stationary hexagonal pattern at the onset of convection to three-dimensional time-dependent convection is explored by a series of simulations at zero Prandtl number.Comment: 26 pages, 9 figure

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.Comment: 5 pages, 4 figure

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

Epitaxial-tau(Mn,Ni)Al/(Al,Ga)As heterostructures: Magnetic and magneto-optic properties

Ferromagnetic Perpendicularly magnetized epitaxial thin films of tau (Mn,Ni)AI have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of tau MnAl and (Mn,Ni) Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16-degrees and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation

Asymptotic analysis of a secondary bifurcation of the one-dimensional Ginzburg-Landau equations of superconductivity

The bifurcation of asymmetric superconducting solutions from the normal solution is considered for the one-dimensional Ginzburg--Landau equations by the methods of formal asymptotics. The behavior of the bifurcating branch depends on the parameters d, the size of the superconducting slab, and $\kappa$, the Ginzburg--Landau parameter. The secondary bifurcation in which the asymmetric solution branches reconnect with the symmetric solution branch is studied for values of $(\kappa,d)$ for which it is close to the primary bifurcation from the normal state. These values of $(\kappa,d)$ form a curve in the $\kappa d$-plane, which is determined. At one point on this curve, called the quintuple point, the primary bifurcations switch from being subcritical to supercritical, requiring a separate analysis. The results answer some of the conjectures of [A. Aftalion and W. C. Troy, Phys. D, 132 (1999), pp. 214--232]

Structural and magnetic properties of the (001) and (111) surfaces of the half-metal NiMnSb

Using the full potential linearised augmented planewave method we study the electronic and magnetic properties of the (001) and (111) surfaces of the half-metallic Heusler alloy NiMnSb from first-principles. We take into account all possible surface terminations including relaxations of these surfaces. Special attention is paid to the spin-polarization at the Fermi level which governs the spin-injection from such a metal into a semiconductor. In general, these surfaces lose the half-metallic character of the bulk NiMnSb, but for the (111) surfaces this loss is more pronounced. Although structural optimization does not change these features qualitatively, specifically for the (111) surfaces relaxations can compensate much of the spin-polarization at the Fermi surface that has been lost upon formation of the surface.Comment: 18 pages, 8 figure