ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS OF IN0.71GA0.29AS0.63P0.37

64123523

BE INCORPORATION AND SURFACE MORPHOLOGIES IN HOMOEPITAXIAL INP FILMS

We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1-2X10(19)cm(-3) while the hole concentration saturates at a lower value (similar to 2X10(18)cm(-3) in our case). The measured lattice mismatch between him and substrate depends both on growth temperature and Be flux. The resulting changes in morphology suggest that the excess Be forms microclusters in the films grown at higher temperatures-due to the higher surface mobility, leading to the growth of oval defects. Be rejection to the surface is also observed. The surfaces of samples with no cap layer present a granulation which may be related to the formation of a new phase like Be3P2. (C) 1995 American Institute of Physics.6781122112

A SIMPLE TECHNIQUE FOR CZOCHRALSKI GROWTH OF GASB SINGLE-CRYSTALS FROM SCUM-FREE MELT

A simple technique for synthesis and growth of GaSb crystals from a scum-free melt has been developed. The key element in this technique is the chemical and thermal treatment of gallium in vacuum before growth. This technique does not require the use of a pure hydrogen ambient nor the two-step process nor the double-crucible technique. Undoped and Te-doped 25 mm diameter GaSb single crystals of orientation have been successfully grown by this technique with typical carrier concentrations of 1.0 x 10(17) cm(-3) and mobility of 717 cm(2)/V(.)s for undoped samples.1514167191

HEAVILY CARBON-DOPED GAALAS GROWN BY VACUUM CHEMICAL EPITAXY

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Measurement of refractive index of GaSb (1.8 to 2.56 mu m) using a prism

The authors have measured the refractive index of GaSb for the transparent region from 1.8 to 2.56 mu m using refraction in a prism. The values obtained agree well. with those recently measured by the authors using ellipsometry. A good fit to the experimental data is obtained using the single oscillator model.32326226