Landau level spectroscopy of ultrathin graphite layers

Far infrared transmission experiments are performed on ultrathin epitaxial graphite samples in a magnetic field. The observed cyclotron resonance-like and electron-positron-like transitions are in excellent agreement with the expectations of a single-particle model of Dirac fermions in graphene, with an effective velocity of c* = 1.03 x 10^6 m/s.Comment: 4 pages 4 figures Slight revisions following referees' comments. One figure modifie

Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere which have non matching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphenes strong potential in photonic nearfield and energy conversion devices.Comment: 4 pages, 3 figure

Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study

The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC and an exfoliated graphene monolayer are presented. Despite its multi-layer character, most parts of the surface of the graphitized SiC substrates shows a single-component, Lorentzian shape, double resonance Raman feature in striking similarity to the case of a single graphene monolayer. Our observation suggests a very weak electronic coupling between graphitic layers on the SiC surface, which therefore can be considered to be graphene multi-layers with a simple (Dirac-like) band structure.Comment: 4 pages, 3 Figures Structure of the paper strongly modified, small changes in Fig 2 and 3. Same interpretation and same result

Plasmon assisted transport through disordered array of quantum wires

Phononless plasmon assisted thermally activated transport through a long disordered array of finite length quantum wires is investigated analytically. Generically strong electron plasmon interaction in quantum wires results in a qualitative change of the temperature dependence of thermally activated resistance in comparison to phonon assisted transport. At high temperatures, the thermally activated resistance is determined by the Luttinger liquid interaction parameter of the wires.Comment: 7 pages, 1 figure, final version as publishe

In situ imaging of field emission from individual carbon nanotubes and their structural damage

©2002 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/80/856/1DOI:10.1063/1.1446994Field emission of individual carbon nanotubes was observed by in situ transmission electron microscopy. A fluctuation in emission current was due to a variation in distance between the nanotube tip and the counter electrode owing to a "head-shaking" effect of the nanotube during field emission. Strong field-induced structural damage of a nanotube occurs in two ways: a piece-by-piece and segment-by-segment pilling process of the graphitic layers, and a concentrical layer-by-layer stripping process. The former is believed owing to a strong electrostatic force, and the latter is likely due to heating produced by emission current that flowed through the most outer graphitic layers

Magnetoplasmons in quasi-neutral epitaxial graphene nanoribbons

We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene

Effect of a magnetic field on the two-phonon Raman scattering in graphene

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.Comment: 11 pages, 7 figure

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.Comment: 5 pages, 2 figures, to appear in Phys. Rev.

Highly-ordered graphene for two dimensional electronics

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.Comment: Submitted to Appl. Phys. Let

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments