Sum rules for correlation functions of ionic mixtures in arbitrary dimension d≥2d\geq 2

The correlations in classical multi-component ionic mixtures with spatial dimension $d\geq 2$ are studied by using a restricted grand-canonical ensemble and the associated hierarchy equations for the correlation functions. Sum rules for the first few moments of the two-particle correlation function are derived and their dependence on $d$ is established. By varying $d$ continuously near $d=2$ it is shown how the sum rules for the two-dimensional mixture are related to those for mixtures at higher $d$.Comment: 19 page

Twisted Open Strings from Closed Strings: The WZW Orientation Orbifolds

Including {\it world-sheet orientation-reversing automorphisms} $\hat{h}_{\sigma} \in H_-$ in the orbifold program, we construct the operator algebras and twisted KZ systems of the general WZW {\it orientation orbifold} $A_g (H_-) /H_-$. We find that the orientation-orbifold sectors corresponding to each $\hat{h}_{\sigma} \in H_-$ are {\it twisted open} WZW strings, whose properties are quite distinct from conventional open-string orientifold sectors. As simple illustrations, we also discuss the classical (high-level) limit of our construction and free-boson examples on abelian $g$.Comment: 65 pages, typos correcte

Organic Single-Crystal Field-Effect Transistors

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $\mu$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductor

Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.Comment: Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issu

Intense field stabilization in circular polarization: 3D time-dependent dynamics

We investigate the stabilization of a hydrogen atom in circularly polarized laser fields. We use a time-dependent, fully three dimensional approach to study the quantum dynamics of the hydrogen atom subject to high intensity, short wavelength laser pulses. We find enhanced survival probability as the field is increased under fixed envelope conditions. We also confirm wavepacket dynamics seen in prior time-dependent computations restricted to two dimensions.Comment: 4 pages, 3 figures, submitte

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.Comment: submitted to Appl. Phys. Let

Space Charge Limited Transport and Time of Flight Measurements in Tetracene Single Crystals: a Comparative Study

We report on a systematic study of electronic transport in tetracene single crystals by means of space charge limited current spectroscopy and time of flight measurements. Both $I$-$V$ and time of flight measurements show that the room-temperature effective hole-mobility reaches values close to $\mu \simeq 1$ cm$^2$/Vs and show that, within a range of temperatures, the mobility increases with decreasing temperature. The experimental results further allow the characterization of different aspects of the tetracene crystals. In particular, the effects of both deep and shallow traps are clearly visible and can be used to estimate their densities and characteristic energies. The results presented in this paper show that the combination of $I$-$V$ measurements and time of flight spectroscopy is very effective in characterizing several different aspects of electronic transport through organic crystals.Comment: Accepted by J. Appl. Phys.; tentatively scheduled for publication in the January 15, 2004 issue; minor revisions compared to previous cond-mat versio