Observation of the single-electron regime in a highly tunable silicon quantum dot

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.Comment: 4 pages, 3 figures, accepted for Applied Physics Letter

Depletion-mode Quantum Dots in Intrinsic Silicon

We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.Comment: Accepted to Applied Physics Letters. 5 pages, 3 figure

Strigolactone analogues induce suicidal seed germination of Striga spp. in soil

Striga hermonthica and Striga asiatica are obligate root parasites that cause serious problems in the production of staple cereal crops in Africa. Because of the high levels of infestation, there is an urgent need to control these weeds. A potentially useful control option is depletion of the soil seed bank by suicidal germination, which involves germination of the seeds in the absence of host plants. Suicidal germination is often mentioned in the literature, but not considered realistic, because of the alleged untimely decomposition of the stimulants in the soil, despite the fact that some encouraging results were reported around 1980. The alleged instability has prevented active research in this direction for the past 20–25 years. Five newly designed synthetic germination stimulants were investigated as candidates for suicidal germination. An important issue is the persistence of these stimulants in soil. Packets with Striga spp. seeds were put in pots with soil and then treated with aqueous solutions of the stimulants. All five compounds induced germination under these conditions, with percentages varying between 18% and 98% depending on stimulant and species. There were no noticeable signs of decomposition of the stimulants. The best performing stimulant is derived from 1-tetralone. We conclude that synthetic strigolactones analogues have excellent prospects for use in combating parasitic weeds. Further testing will be needed to evaluate whether such prospects can be realised in the field

Strong coupling between single-electron tunneling and nano-mechanical motion

Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio frequency potential using a nearby antenna. Single-electron charge fluctuations created periodic modulations of the mechanical resonance frequency. A quality factor exceeding 10^5 allows the detection of a shift in resonance frequency caused by the addition of a single-electron charge on the nanotube. Additional evidence for the strong coupling of mechanical motion and electron tunneling is provided by an energy transfer to the electrons causing mechanical damping and unusual nonlinear behavior. We also discovered that a direct current through the nanotube spontaneously drives the mechanical resonator, exerting a force that is coherent with the high-frequency resonant mechanical motion.Comment: Main text 12 pages, 4 Figures, Supplement 13 pages, 6 Figure

Resonant tunnelling features in the transport spectroscopy of quantum dots

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing.Comment: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale