Особенности воспалительных паттернов бронхов и клинико-функциональная характеристика тяжелой неконтролируемой астмы у больных с холодовой гиперреактивностью дыхательных путей

The aim of this study was to investigate airway inflammation patterns and clinical and functional features of severe uncontrolled asthma.Methods. The study involved 25 patients aged 45 to 55 years with severe uncontrolled asthma. Medical history was analyzed. Lung function tests, cytological and cytochemical investigation of induced sputum were performed in all patients. Asthma control was assessed using the Asthma Control Test questionnaire.Results. The patients were divided into groups: with eosinophilic (> 2% of eosinophils; n = 11) or mixed (≥ 2% of eosinophils and ≥ 61% of neutrophils; n = 14) airway inflammation patterns according to induced sputum cytology. Oxidative function of leucocytes according to myeloper oxidase level in the cells and the degree of cytolysis were increased in the mixed inflammation group. More severe symptoms, more frequent asthma exacerbations, a tendency to worse asthma control and lower FEF50 and MEF25–75 were found in the mixed inflammation group. Coldinduced air way hyperresponsiveness was diagnosed in 12 patients of the mixed inflammation group and in 3 patients of the eosinophilic inflammation group. Severity of the disease, lung function abnormalities and coldinduced airway hyperresponsiveness in patients with severe uncontrolled asthma were related to the airway inflammation pattern.Conclusion. The mixed inflammation pattern was associated to more severe asthma course and worse control of the disease.Персистенция воспаления дыхательных путей у больных бронхиальной астмой (БА) способствует развитию тяжелого неконтролируемого течения болезни.Цель. Изучение особенностей воспалительных паттернов и клиникофункциональных параметров тяжелой неконтролируемой БА.Материалы и методы. В холодный период года (ноябрь – март) проведено обследование больных (n = 25) в возрасте от 45 до 55 лет с установленным диагнозом тяжелой неконтролируемой БА при помощи определения реактивности дыхательных путей на холодовой стимул по данным анамнестического тестирования, исследования функции внешнего дыхания по стандартной методике, цитологического и цитохимического исследования индуцированной мокроты (ИМ).Результаты. По данным анализа цитограмм ИМ больные были разделены на 2 группы: 1я (n = 11) – с эозинофильным (> 2 % эозинофилов), 2я (n = 14) – со смешанным (≥ 2 % эозинофилов + ≥ 61 % нейтрофилов) паттернами воспаления. Оксидативная функция лейкоцитов, оцениваемая по уровню миелопероксидазы в клетках, степени деструкции и интенсивности цитолиза, доминировала во 2й группе. У пациентов этой группы выявлены более выраженные симптомы и большее число случаев обострения БА, тенденция к снижению уровня контроля над болезнью по вопроснику Asthma Control Test, более значимое снижение максимальной объемной скорости в момент выдоха 25, 50 и 75 % форсированной жизненной емкости легких соответственно. Холодовая гиперреактивность дыхательных путей (ХГДП) по клинически значимым признакам установлена у больных 2й (n = 12) и 1й (n = 3) групп. Показано, что проявления тяжести течения болезни, нарушения вентиляционной функции легких и частота развития ХГДП у больных тяжелой неконтролируемой БА сопряжены с паттерном воспаления бронхов.Заключение. Смешанный воспалительный паттерн связан с утяжелением течения БА и более сложной проблемой контроля над болезнью

Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction, micro-Raman at room temperature, and photoluminescence (PL) measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. X-ray diffraction results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties

Linear Polarized Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Uniaxially Deformed Germanium

We report on polarization spectra of spontaneous terahertz electroluminescence from uniaxially deformed Ge(Ga). At compressive pressure of about 3±0.3 kbar in the [111] direction, near the impurity breakdown threshold, the linear polarization degree attains ≈80-90% for the main lines of the terahertz emission

Generation of Terahertz Radiation by a Photoconductive Antenna

We report on the first principle calculations of photocarriers kinetics in a photoconductive antenna excited by an ultrashort optical laser pulse. The solution of non-equilibrium Boltzmann equation is used to derive the expression for the irradiated electric field. The analysis reveals the important role of non-uniform photocarrier distribution inside the active layer in the formation of the terahertz radiation from the emitter in both collinear and anti-collinear directions

Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity

The polarization spectra of spontaneous terahertz radiation in uniaxially deformed germanium have been measured upon the electric breakdown of shallow acceptors. Lines with various degrees of polarization with respect to the compression axis have been observed in the radiation spectrum. These lines are associated with the optical transitions of holes between the excited and ground states of the acceptor, as well as with the transitions of holes from the valence band to the ground state of the impurity. At a pressure of about 3 ± 0.3 kbar in the [111] direction near the impurity breakdown, the linear polarization degree reaches ∼80–90% in the main lines of terahertz radiation. As the electric field intensity increases, the depolarization of radiation is observed, which is caused by the heating of nonequilibrium holes by the electric field