Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.Comment: Related papers at http://pettagroup.princeton.ed

Reconfigurable binary optical routing switches with fan-out based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors

Includes bibliographical references.The design, fabrication, and experimental demonstration of dynamically reconfigurable binary optical switches based on the integration of GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are reported. These new monolithic optical switches can perform spatial routing and optical amplification functions on input optical data with a fan-out of two, and can be programmed using simple voltage control. The 1 × 2 and 2 × 2 devices provide the basis for a high performance, two-dimensional optical switching fabric with electrical interfaces for optical switching and interconnection networks.The work at UNM was supported by Rome Laboratories (Griffiss AFB), the Advanced Research Projects Agency-MTO, and the Air Force Office of Scientific Research (Bolling AFB). The work performed at Sandia was supported by DOE Contract No. DE-AC04-76DP00789

Binary optical switch and programmable optical logic gate based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors

Includes bibliographical references.Optical switches based on GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are combined monolithically into new switching configurations that perform optical logic and spatial routing in a dynamically programmable manner. Using simple voltage control, many different logic and routing configurations, including AND and OR gates with variable fan-out, can be implemented using the same hardware.The work at UNM was supported by AFOSR (Bolling AFB), ARPA, and Rome Labs (Griffiss AFB). The Sandia effort was supported by DOE Contract No. DE-AC04-94AL85000

Gestational Weight Gain and Body Mass Index in Children: Results from Three German Cohort Studies

Previous studies suggested potential priming effects of gestational weight gain (GWG) on offspring's body composition in later life. However, consistency of these effects in normal weight, overweight and obese mothers is less clear. We combined the individual data of three German cohorts and assessed associations of total and excessive GWG (as defined by criteria of the Institute of Medicine) with offspring's mean body mass index (BMI) standard deviation scores (SDS) and overweight at the age of 5-6 years (total: n = 6,254). Quantile regression was used to examine potentially different effects on different parts of the BMI SDS distribution. All models were adjusted for birth weight, maternal age and maternal smoking during pregnancy and stratified by maternal pre-pregnancy weight status. In adjusted models, positive associations of total and excessive GWG with mean BMI SDS and overweight were observed only in children of non- overweight mothers. For example, excessive GWG was associated with a mean increase of 0.08 (95% CI: 0.01, 0.15) units of BMI SDS (0.13 (0.02, 0.24) kg/m(2) of 'real' BMI) in children of normal-weight mothers. The effects of total and excessive GWG on BMI SDS increased for higher- BMI children of normal-weight mothers. Increased GWG is likely to be associated with overweight in offspring of non-overweight mothers

Racial/Ethnic Disparities in Inadequate Gestational Weight Gain Differ by Pre-pregnancy Weight

OBJECTIVES: Pre-pregnancy body mass index (BMI) varies by race/ethnicity and modifies the association between gestational weight gain (GWG) and adverse pregnancy outcomes, which disproportionately affect racial/ethnic minorities. Yet studies investigating whether racial/ethnic disparities in GWG vary by pre-pregnancy BMI are inconsistent, and none studied nationally representative populations. METHODS: Using categorical measures of GWG adequacy based on Institute of Medicine recommendations, we investigated whether associations between race/ethnicity and GWG adequacy were modified by pre-pregnancy BMI [underweight (<18.5kg/m(2)), normal weight (18.5-24.9 kg/m(2)), overweight (25.0-29.9 kg/m(2)), or obese (≥30.0 kg/m(2)) ] among all births to Black, Hispanic, and White mothers in the 1979 USA National Longitudinal Survey of Youth cohort (n=6849 pregnancies; range=1-10). We used generalized estimating equations, adjusted for marital status, parity, smoking during pregnancy, gestational age, and multiple measures of socioeconomic position. RESULTS: Effect measure modification between race/ethnicity and pre-pregnancy BMI was significant for inadequate GWG (Wald test p-value=0.08). Normal weight Black (Risk Ratio (RR)=1.34, 95% confidence interval (CI): 1.18, 1.52) and Hispanic women (RR=1.33, 95%CI: 1.15, 1.54) and underweight Black women (RR=1.38; 95% CI: 1.07, 1.79) experienced an increased risk of inadequate GWG compared to Whites. Differences in risk of inadequate GWG between minority women, compared to White women, were not significant among overweight and obese women. Effect measure modification between race/ethnicity and pre-pregnancy BMI was not significant for excessive GWG. CONCLUSIONS: The magnitude of racial/ethnic disparities in inadequate GWG appears to vary by pre-pregnancy weight class, which should be considered when designing interventions to close racial/ethnic gaps in healthy GWG

A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

We investigated (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy. The crystalline quality of the epitaxial films grown by the different techniques, as determined by the linewidth and intensity of the symmetry-allowed LO phonon lines, is found to be comparable. Symmetryforbidden TO phonon lines were observed in some undoped molecular-beam epitaxial films, and in heavily doped p-type (&#8805; 10¹⁸ cm⁻³) samples. The possible causes for its presence in each case are discussed. The Raman spectrum obtained from an interfacial region between GaAs and Al_0.35 Ga_0.65 As films showed an enhancement of the LO phonon-plasmon coupled mode and the TO mode presumably due to reduced carrier depletion near the interface and breakdown of selection rules due to disorder, respectively. It is suggested that Raman spectroscopy can be used as a technique to characterize interfaces in a multilayer structure