11 research outputs found

    Laser scanning microscopy of HTS films and devices (Review Article)

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    The work describes the capabilities of laser scanning microscopy (LSM) as a spatially-resolved method of testing high–Tc materials and devices. The earlier results obtained by the authors are briefly reviewed. Some novel applications of the LSM are illustrated, including imaging the HTS responses in rf mode, probing the superconducting properties of HTS single crystals, development of two-beam laser scanning microscopy. The existence of the phase slip lines mechanism of resistivity in HTS materials is proven by LSM imaging

    Features of the Restoration of Arterial Circulation in Liver Transplantation

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    Objectives. Violations of tissue blood supply remain one of the most serious complications after liver transplantation. Design. To improve the surgical technique of performing reconstructive interventions on the arteries of the donor and the recipient in order to reduce the frequency of its thrombosis after liver transplantation. We studied 25 donors, 20 men and 5 women, the mean age was 56± 4 years, eighteen of them had left aberrant supplementary artery, which in fifteen departed from the left gastric artery and in three from the aorta above the ventricular stem. Seventeen had the right aberrant artery moving away from the upper mesenteric artery. Twenty recipients with liver cirrhosis (eleven with primary biliary cirrhosis, five with primary sclerosing cholangitis, five with viral etiology C cirrhosis, and three of the lower cirrhosis-cirrhosis disseminated within the Milan criteria. All recipients had standard anatomical branching of the arteries of the liver. The average age was 50±6. All recipients had standard anatomical branching of the liver arteries. Patients underwent liver transplantation with new methods of reconstructive interventions on the donor and recipient arteries. The developed technique provides the shortest pathway of the recipient's arterial blood to the liver transplant, through the superior mesenteric artery provides an alternative source of arterial blood supply from the aorta in which this transplant additionally needs. Presented method of blood circulation restoration at liver transplantation at abnormal structure of arterial channel of the liver transplant is performed inside the recipient's abdominal cavity. At first, blood flow is restored along the reconstructed common hepatic artery, after the right or left aberrant arteries liver transplant. Such technique provides the shortest route of the recipient's arterial blood to the liver transplant, through the upper mesenteric artery provides an alternative source of arterial blood supply from the aorta for which the transplant is additionally needed. This new method of blood circulation restoration provides an opportunity to avoid the formation of "kinking" syndrome, in the occurrence of which the blood vessels are lengthened, the angulation and location of the blood vessel in relation to the grafts and other abdominal organs. This reduces the risk of thrombosis of the arteries of the transplanted liver

    Individualization of fire preparation of students of higher educational establishments of MІА of Ukraine taking into account features of their motility

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    Fire preparation is component part of professional preparation of future officers of police. In the article is open up the modern state of educational discipline «fire preparation» in higher educational establishments of MІА of Ukraine, issues of the day of teaching method. Author specifies the concrete ways of perfection of the system preparations of limbs of the law, main from which, on the view of author, there is the use in the educational process of modern sporting technologies and his maximal approaching to the real terms of professional practical activity. Concrete recommendations are specified to the change of existent methods, possibility that to introduction of them in an educational process

    Точні нерівності типу Ремеза для функцій з асиметричними обмеженнями на старшу похідну

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    For odd $r\in \mathbb{N};; α,β>0\alpha, \beta >0;; p[1,]p\in [1, \infty];; δ(0,2π)\delta \in (0, 2 \pi),any, any 2π2\piperiodicfunction-periodic function xLr(I2π)x\in L^r_{\infty}(I_{2\pi}),, I2π:=[0,2π]I_{2\pi}:=[0, 2\pi],andarbitrarymeasurableset, and arbitrary measurable set BI2π,B \subset I_{2\pi}, μBδ/λ,\mu B \leqslant \delta/\lambda,where where λ=\lambda= (φrα,βα1x+(r)+β1x(r)E01(x))1/r\left({\left\|\varphi_{r}^{\alpha, \beta}\right\|_{\infty} \left\| {\alpha^{-1}}{x_+^{(r)}} + {\beta^{-1}}{x_-^{(r)}}\right\|_\infty}{E^{-1}_0(x)_\infty}\right)^{1/r},weobtainsharpRemeztypeinequality, we obtain sharp Remez type inequality E0(x)φrα,βE0(φrα,β)Lp(I2πBδ)γxLp(I2πB)γα1x+(r)+β1x(r)1γ,E_0(x)_\infty \leqslant \frac{\|\varphi_r^{\alpha, \beta}\|_\infty}{E_0(\varphi_r^{\alpha, \beta})^{\gamma}_{L_p(I_{2\pi} \setminus B_\delta)}} \left\|x \right\|^{\gamma}_{{L_p} \left(I_{2\pi} \setminus B \right)}\left\| {\alpha^{-1}}{x_+^{(r)}} + {\beta^{-1}}{x_-^{(r)}}\right\|_\infty^{1-\gamma},where where γ=rr+1/p,\gamma=\frac{r}{r+1/p}, φrα,β\varphi_r^{\alpha, \beta}isnonsymmetricidealEulersplineoforder is non-symmetric ideal Euler spline of order rr,, Bδ:=[Mδ2,M+δ1]B_\delta:= \left[M- \delta_2, M+ \delta_1 \right],, MMisthepointoflocalmaximumofspline is the point of local maximum of spline φrα,β\varphi_r^{\alpha, \beta}and and δ1>0\delta_1 > 0,, δ2>0\delta_2 > 0aresuchthat are such that φrα,β(M+δ1)=φrα,β(Mδ2),    δ1+δ2=δ.\varphi_r^{\alpha, \beta}(M+ \delta_1) = \varphi_r^{\alpha, \beta}(M- \delta_2), \;\; \delta_1 + \delta_2 = \delta .Inparticular,weprovethesharpinequalityofHo¨rmanderRemeztypeforthenormsofintermediatederivativesofthefunctionsIn particular, we prove the sharp inequality of Hörmander-Remez type for the norms of intermediate derivatives of the functions xLr(I2π)x\in L^r_{\infty}(I_{2\pi}).Длянепарних.Для непарних rNr\in \mathbb{N};; α,β>0\alpha, \beta >0;; p[1,]p\in [1, \infty];; δ(0,2π)\delta \in (0, 2 \pi),довільної, довільної 2π2\piперіодичноїфункції- періодичної функції xLr(I2π)x\in L^r_{\infty}(I_{2\pi}),, I2π:=[0,2π]I_{2\pi}:=[0, 2\pi],iбудьякоївимірноїмножини, i будь-якої вимірної множини BI2π,B \subset I_{2\pi}, μBδ/λ,\mu B \leqslant \delta/\lambda,де де λ=(φrα,βα1x+(r)+β1x(r)E01(x))1/r\lambda=\left({\left\|\varphi_{r}^{\alpha, \beta}\right\|_{\infty} \left\| {\alpha^{-1}}{x_+^{(r)}} + {\beta^{-1}}{x_-^{(r)}}\right\|_\infty}{E^{-1}_0(x)_\infty}\right)^{1/r},отриманаточнанерівністьтипуРемеза, отримана точна нерівність типу Ремеза E0(x)φrα,βE0(φrα,β)Lp(I2πBδ)γxLp(I2πB)γα1x+(r)+β1x(r)1γ,E_0(x)_\infty \leqslant \frac{\|\varphi_r^{\alpha, \beta}\|_\infty}{E_0(\varphi_r^{\alpha, \beta})^{\gamma}_{L_p(I_{2\pi}\setminus B_\delta)}} \left\|x \right\|^{\gamma}_{{L_p} \left(I_{2\pi}\setminus B \right)}\left\| {\alpha^{-1}}{x_+^{(r)}} + {\beta^{-1}}{x_-^{(r)}}\right\|_\infty^{1-\gamma},де де γ=rr+1/p,\gamma=\frac{r}{r+1/p}, φrα,β\varphi_r^{\alpha, \beta} -несиметричнийідеальнийсплайнЕйлерапорядку несиметричний ідеальний сплайн Ейлера порядку rr,, Bδ:=[Mδ2,M+δ1]B_\delta:=\left[M- \delta_2, M+ \delta_1 \right],, MM -точкалокальногомаксимума точка локального максимума φrα,β\varphi_r^{\alpha, \beta},а, а δ1>0\delta_1 > 0і і δ2>0\delta_2 > 0такі,що такі , що φrα,β(M+δ1)=φrα,β(Mδ2),    δ1+δ2=δ.\varphi_r^{\alpha, \beta}(M+ \delta_1) = \varphi_r^{\alpha, \beta}(M- \delta_2), \;\; \delta_1 + \delta_2 = \delta .ЯкнаслідокдоведенааналогічнаточнанерівністьтипуХьормандераРемезадлянормпроміжнихпохіднихфункційЯк наслідок доведена аналогічна точна нерівність типу Хьормандера-Ремеза для норм проміжних похідних функцій xLr(I2π)x\in L^r_{\infty}(I_{2\pi})$

    Formation and evolution of intermixing zones in C/Si multilayer under heating

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    Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C
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