Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse

The effect of slow passage in the pulse-pumped quantum dot laser

In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practical applications due to their advantages such as high-power pulse generation because to the high gain efficiency. In this work, the pulse shape of an electrically pumped QD-laser under high current is analyzed. We find that the slow rise time of the pulsed pump may significantly affect the high intensity output pulse. It results in sharp power dropouts and deformation of the pulse profile. We address the effect to dynamical change of the phase-amplitude coupling in the proximity of the excited state (ES) threshold. Under 30ns pulse pumping, the output pulse shape strongly depends on pumping amplitude. At lower currents, which correspond to lasing in the ground state (GS), the pulse shape mimics that of the pump pulse. However, at higher currents the pulse shape becomes progressively unstable. The instability is greatest when in proximity to the secondary threshold which corresponds to the beginning of the ES lasing. After the slow rise stage, the output power sharply drops out. It is followed by a long-time power-off stage and large-scale amplitude fluctuations. We explain these observations by the dynamical change of the alpha-factor in the QD-laser and reveal the role of the slowly rising pumping processes in the pulse shaping and power dropouts at higher currents. The modeling is in very good agreement with the experimental observations

Slow passage through thresholds in quantum dot lasers

A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the turn-on times is measured as a function of the pump rate of change and reveals no clear power law. This has motivated a detailed analysis of rate equations appropriate for two-state lasing QD lasers. We find that the effective time of the GS turn on follows an -1/2 power law provided that the rate of change is not too small. The effective time of the ES transition follows an -1 power law, but its first order correction in ln is numerically significant. The two turn ons result from different physical mechanisms. The delay of the GS transition strongly depends on the slow growth of the dot population, whereas the ES transition only depends on the time needed to leave a repellent steady state

Disorder and thermally driven vortex-lattice melting in La{2-x}Sr{x}CuO{4} crystals

Magnetization measurements in La{2-x}Sr{x}CuO{4} crystals indicate vortex order-disorder transition manifested by a sharp kink in the second magnetization peak. The transition field exhibits unique temperature dependence, namely a strong decrease with temperature in the entire measured range. This behavior rules out the conventional interpretation of a disorder-driven transition into an entangled vortex solid phase. It is shown that the transition in La{2-x}Sr{x}CuO{4} is driven by both thermally- and disorder-induced fluctuations, resulting in a pinned liquid state. We conclude that vortex solid-liquid, solid-solid and solid to pinned-liquid transitions are different manifestations of the same thermodynamic order-disorder transition, distinguished by the relative contributions of thermal and disorder-induced fluctuations.Comment: To be published in phys. Rev. B Rapid Com

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes

Dynamic Vortex Phases and Pinning in Superconductors with Twin Boundaries

We investigate the pinning and driven dynamics of vortices interacting with twin boundaries using large scale molecular dynamics simulations on samples with near one million pinning sites. For low applied driving forces, the vortex lattice orients itself parallel to the twin boundary and we observe the creation of a flux gradient and vortex free region near the edges of the twin boundary. For increasing drive, we find evidence for several distinct dynamical flow phases which we characterize by the density of defects in the vortex lattice, the microscopic vortex flow patterns, and orientation of the vortex lattice. We show that these different dynamical phases can be directly related to microscopically measurable voltage - current V(I) curves and voltage noise. By conducting a series of simulations for various twin boundary parameters we derive several vortex dynamic phase diagrams.Comment: 5 figures, to appear in Phys. Rev.

V-I characteristics in the vicinity of order-disorder transition in vortex matter

The shape of the V-I characteristics leading to a peak in the differential resistance r_d=dV/dI in the vicinity of the order-disorder transition in NbSe2 is investigated. r_d is large when measured by dc current. However, for a small Iac on a dc bias r_d decreases rapidly with frequency, even at a few Hz, and displays a large out-of-phase signal. In contrast, the ac response increases with frequency in the absence of dc bias. These surprisingly opposite phenomena and the peak in r_d are shown to result from a dynamic coexistence of two vortex matter phases rather than from the commonly assumed plastic depinning.Comment: 12 pages 4 figures. Accepted for publication in PRB rapi

Metastability and Transient Effects in Vortex Matter Near a Decoupling Transition

We examine metastable and transient effects both above and below the first-order decoupling line in a 3D simulation of magnetically interacting pancake vortices. We observe pronounced transient and history effects as well as supercooling and superheating between the 3D coupled, ordered and 2D decoupled, disordered phases. In the disordered supercooled state as a function of DC driving, reordering occurs through the formation of growing moving channels of the ordered phase. No channels form in the superheated region; instead the ordered state is homogeneously destroyed. When a sequence of current pulses is applied we observe memory effects. We find a ramp rate dependence of the V(I) curves on both sides of the decoupling transition. The critical current that we obtain depends on how the system is prepared.Comment: 10 pages, 15 postscript figures, version to appear in PR

Hysteretic behavior of the vortex lattice at the onset of the second peak for HgBa2_2CuO4+δ_{4+\delta} superconductor

By means of local Hall probe ac and dc permeability measurements we investigated the phase diagram of vortex matter for the HgBa$_2$CuO$_{4+\delta }$ superconductor in the regime near the critical temperature. The second peak line, $H_{\rm sp}$, in contrast to what is usually assumed, doesn't terminate at the critical temperature. Our local ac permeability measurements revealed pronounced hysteretic behavior and thermomagnetic history effects near the onset of the second peak, giving evidence for a phase transition of vortex matter from an ordered qausilattice state to a disordered glass

Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation